BCV27
Elektronische Bauelemente
40 V, 500mA
NPN Darlington Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
A
FEATURES
For general AF application high collector current
High current gain
1
L
3
3
Top View
2
C B
1
2
K
E
D
Collector
3
F
G
H
J
1
Base
REF.
A
B
C
D
E
F
2
Emitter
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
-
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current - Peak
Collector Power Dissipation
Thermal Resistance, Junction to Ambient Air
Junction, Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
R
θJA
T
J
, T
STG
RATING
40
30
10
500
800
350
357
150, -65~150
UNIT
V
V
V
mA
mA
mW
°
C/W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
*
h
FE2
*
h
FE3
*
h
FE4
*
V
CE(sat)
*
V
BE(sat)
*
f
T
MIN
40
30
10
-
-
4000
10000
20000
4000
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
170
3.5
MAX
-
-
-
0.1
0.1
-
-
-
-
1
1.5
-
-
UNIT
V
V
V
µA
µA
TEST CONDITION
I
C
=100µA, I
E
= 0A
I
C
=10mA, I
B
= 0A
I
E
=10µA, I
C
= 0A
V
CB
=30 V, I
E
= 0 A
V
EB
=4 V, I
C
= 0 A
V
CE
=1V, I
C
=100µA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=500mA
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
V
V
MHz
pF
I
C
=100mA, I
B
=0.1mA
I
C
=100mA, I
B
=0.1mA
V
CE
= 5V, I
C
=50mA, f=100MHz
V
CB
= 10V, f=1MHz
Collector Output Capacitance
C
ob
*Pulse test: Pulse width
≦300µS;
Ducy Cycle
≦2.0%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Jan-2010 Rev. A
Page 1 of 3
BCV27
Elektronische Bauelemente
40 V, 500mA
NPN Darlington Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Jan-2010 Rev. A
Page 2 of 3
BCV27
Elektronische Bauelemente
40 V, 500mA
NPN Darlington Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Jan-2010 Rev. A
Page 3 of 3
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