BCP194
Elektronische Bauelemente
NPN Silicon
Planar
Medium Power
Transistor
RoHS Compliant Product
Description
The BCP194 is designed for medium
power amplifier applications.
SOT-89
Features
* 1 Amp Continuous Current
* 60 Volt V
CEO
* Complementary to BCP195
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at T
A
=25 C
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Total Power Dissipation
Junction and Storage Temperature
o
o
Parameter
Value
80
60
5
1
2
200
1
-55~+150
Units
V
V
V
A
mA
W
O
I
C
I
B
P
D
T
J,
T
stg
C
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Typ.
Symbol
Min
Collector-Base Breakdown Voltage
80
BV
CBO
-
-
*BV
CEO
Collector-Emitter Breakdown Voltage
60
-
BV
EBO
Emitter-Base Breakdown Voltage
5
-
-
Collector-Base Cutoff Current
I
CBO
-
Emitter-Base Cutoff Current
-
I
CES
-
Emitter-Base Cutoff Current
-
I
EBO
*V
CE
(sat)1
-
-
Collector Saturation Voltage
-
*V
CE
(sat)2
-
-
-
*V
BE
(sat)
Base-Emitter Saturation Voltage
-
-
*V
BE
(on)
-
*h
FE1
100
*h
FE2
100
-
DC Current Gain
*h
FE3
80
-
-
30
*h
FE4
Gain-Bandwidth Product
fT
-
150
-
Output Capacitance
-
C
ob
* Measured under pulse condition. Pulse width
≦
300
µ
s, Duty Cycle
≦
2%
Parameter
http://www.SeCoSGmbH.com
Max
-
-
-
100
100
100
0.25
0.5
1.1
1
-
300
-
-
-
10
Unit
V
V
V
nA
nA
nA
V
V
V
V
Test Conditions
I
C
=100
µA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
= 60V,I
E
=0
V
CES
=60V
V
EB
=4V,I
C
=0
I
C
=500mA,I
B
=50mA
I
C
=1A,I
B
=100mA
I
C
=1A,I
B
=100mA
I
C
=1A,V
CE
=5V
V
CE
= 5 V, I
C
=1mA
V
CE
= 5 V, I
C
=500mA
V
CE
= 5 V, I
C
=1A
V
CE
= 5 V, I
C
=2 A
V
CE
= 10V, I
C
=50m A,f=100MHz
V
CB
=10V , f=1MHz,I
E
=0
MH z
pF
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
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