PNP
Silicon Planar
Medium Power
Transistor
RoHS Compliant Product
BCP195
SOT-89
Description
The BCP195 is designed for medium power
amplifier applications.
1
2
3
1.BASE
Features
* 1Amp Continuous Current
* -60V VCEO
* Complementary TO BCP194
2.COLLECTOR
3.EMITTER
REF.
A
B
C
D
E
F
Min.
4.4
4.05
1.50
1.30
2.40
0.89
Millimeter
Max.
4.6
4.25
1.70
1.50
2.60
1.20
REF.
G
H
I
J
K
L
M
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Millimeter
Absolute Maximum Ratings at Ta=25 C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Total Power Dissipation
Operating Junction and Storage Temperature
o
o
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
D
T
J
,T
STG
-80
-60
-5
-1
-2
-200
1
+150,-55 ~ +150
Value
Unit
V
V
V
A
A
mA
W
o
C
Electrical Characteristics (Ta=25 C, unless otherwise stated)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Saturation Cut-off Current
Collector-Emitter Saturation Voltage
Output Capacitance
Base-Emitter Voltage
DC Current Gain
Transition Frequency
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
1
V
CE(sat)
2
C
ob
V
BE(sat)
V
BE(on)
h
FE1
h
FE2
h
FE3
h
FE4
f
T
Min.
-80
-60
-5
-
-
-
-
-
-
-
-
100
100
80
15
150
Typ. Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-100
-100
-100
-0.3
-0.6
10
-1.2
-1
-
300
-
-
-
Unit
V
V
V
nA
nA
nA
V
V
pF
V
V
MHz
I
C
=-100µA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-60V, I
E
=0
V
EB
=-4V, I
C
=0
V
CES
=-60V
I
C
=-500mA, I
B
=-50mA
I
C
=-1A, I
B
=-100mA
V
CB
=-10V, f=1MHz,I
E
=0
I
C
=-1A, I
B
=-100mA
V
CE
=-5V,I
B
=-1A
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-500mA
V
CE
=-5V, I
C
=-1A
V
CE
=-5V, I
C
=-2A
V
CE
=-10V,I
C
=-50mA, f=100MHz
Test Conditions
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2003 Rev.B
Page 1 of 2
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