BCP1898
Elektronische Bauelemente
1A, 100V
NPN Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The BCP1898 is designed for switching applications.
SOT-89
MARKING
189 8
Date Code
1
A
E
C
4
2
3
B
D
F
G
H
K
J
L
CLASSIFICATION OF h
FE
Product-Rank
Range
BCP1898-P
82~180
BCP1898-Q
120~270
BCP1898-R
180~390
REF.
PACKAGE INFORMATION
Package
SOT-89
MPQ
1K
LeaderSize
7’ inch
A
B
C
D
E
F
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
1.2
0.89
0
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
(Single pulse Pw=20ms)
P
D
T
J
, T
STG
Ratings
100
80
5.0
1
2
500
150, -55~150
Unit
V
V
V
A
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output Capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
OB
Min.
100
80
5
-
-
82
-
-
-
Typ.
-
-
-
-
-
-
-
100
25
Max.
-
-
-
1
1
390
400
-
-
Unit
V
V
V
µA
µA
mV
MHz
pF
Test Conditions
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=80V
V
EB
=4V
V
CE
=3V, I
C
= 500mA
I
C
=500mA, I
B
= 20mA
V
CE
=10V, I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Dec-2010 Rev. B
Page 1 of 2
BCP1898
Elektronische Bauelemente
1A, 100V
NPN Epitaxial Planar Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Dec-2010 Rev. B
Page 2 of 2
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