TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
DEVICES
LEVELS
1N6101
JAN
JANTX
JANTXV
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions
fabricated by a planar process and mounted in a 16-PIN package for use as
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by
directing them either to the positive side of the power supply line or to ground
(see figure 1). An external TVS diode may be added between the positive supply
line and ground to prevent overvoltage on the supply rail. They may also be used
in fast switching core-driver applications. This includes computers and peripheral
equipment such as magnetic cores, thin-film memories, plated-wire memories,
etc., as well as decoding or encoding applications. These arrays offer many
advantages of integrated circuits such as high-density packaging and improved
reliability. This is a result of fewer pick and place operations, smaller footprint,
smaller weight, and elimination of various discrete packages that may not be as
user friendly in PC board mounting.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
16-PIN Ceramic
DIP
FEATURES
Hermetic Ceramic Package
Isolated Diodes to Eliminate Cross-Talk Voltages
High Breakdown Voltage V
BR
> 75 V at 5
μA
Low Leakage I
R
< 100nA at 40 V
Low Capacitance C < 4.0 pF
Switching Speeds less than 10 ns
Options for screening in accordance with MIL-PRF-19500/474 for JAN,
JANTX, JANTXV, the prefixes respectively to part numbers.
T4-LDS-0083 Rev. 1 (082463)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
APPLICATIONS / BENEFITS
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD : Air 15kV, contact 8kW
61000-4-4 (EFT) : 40A – 5/50 ns
61000-4-5 (surge): 12A 8/20
μs
MAXIMUM RATINGS
Reverse Breakdown Voltage 75 V (Notes 1 & 2)
Continuous Forward Current 300 mA dc (Notes 1 & 3)
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
400 mW Power Dissipation per Junction @ 25
o
C
600 mW Power Dissipation per Package @ 25
o
C (Note 4)
Operating Junction Temperature range –65° to +150
o
C
Storage Temperature range of –65° to +200
o
C
NOTE 1:
NOTE 2:
NOTE 3:
NOTE 4:
Each Diode
Pulsed: P
W
= 100 ms max; duty cycle
≤
20%
Derate at 2.4 mA/°C above +25°C
Derate at 4.8 mW/°C above +25°C
MECHANICAL AND PACKAGING
16-PIN Ceramic DIP
Weight 2.09 grams (approximate)
Marking: Logo, part number, date code
Pin #1 to the left of the indent on top of package
Carrier Tubes; 25 pcs (standard)
T4-LDS-0083 Rev. 1 (082463)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25
o
C unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
V
F1
I
F
= 100 mA
(Note 1)
MAXIMUM
REVERSE
CURRENT
I
R1
V
R
= 40 V
MAXIMUM
REVERSE
CURRENT
I
R2
V
R
= 20 V
MAXIMUM
CAPACITANCE
(PIN TO PIN)
MAXIMUM
FORWARD
RECOVERY
TIME
t
fr
I
F
= 100 mA
MAXIMUM
REVERSE
RECOVERY
TIME
trr
I
F
=
I
R
= 10 mAdc
i
rr
= 1 mAdc
R
L
= 100 ohms
MAXIMUMF
ORWARD
VOLTAGE
MATCH
V
F5
I
F
= 10 mA
C
t
V
R
= 0 V
F = 1 MHz
PART
NUMBER
V
1
µA
0.1
nA
25
pF
4.0
ns
15
ns
10
mV
5
1N6101
NOTE 1:
Pulsed: P
W
= 300 µs +/- 50 µs, duty cycle
≤
2%, 90 µs after leading edge.
SYMBOLS & DEFINITIONS
Symbol
V
BR
V
F
I
R
C
t
DEFINITION
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified
current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance of the diode as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
T4-LDS-0083 Rev. 1 (082463)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
SCHEMATIC
CIRCUIT
Supply rail (+V
CC
)
I/O Port
GND (or -V
CC
)
STEERING DIODE APPLICATION
FIGURE 1
PACKAGE DIMENSIONS
.200
MAX
.200
.100
.023
.014
.070
.030
.785
MAX
.100
BSC
1
2
3
4
5
6
7
8
.310
.220
16
15
14
13
12
11
10
9
.005
MIN
.060
.015
.320
.290
T4-LDS-0083 Rev. 1 (082463)
Page 4 of 4
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