TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
DEVICES
LEVELS
1N5768
JAN
JANTX
JANTXV
DESCRIPTION
These low capacitance diode arrays with common cathode are multiple, discrete,
isolated junctions fabricated by a planar process and mounted in a 10-PIN
package for use as steering diodes protecting up to eight I/O ports from ESD,
EFT, or surge by directing them to the positive side of the power supply line (see
figure 1). This circuit application is further complimented by the 1N5770
(separate data sheet) that has a common anode. An external TVS diode may be
added between the positive supply line and ground to prevent overvoltage on the
supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding
applications. These arrays offer many advantages of integrated circuits such as
high-density packaging and improved reliability. This is a result of fewer pick
and place operations, smaller footprint, smaller weight, and elimination of various
discrete packages that may not be as user friendly in PC board mounting.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
10-PIN Ceramic
Flat Pack
FEATURES
Hermetic Ceramic Package
Isolated Diodes to Eliminate Cross-Talk Voltages
High Breakdown Voltage V
BR
> 60 V at 10
μA
Low Leakage I
R
< 100nA at 40 V
Low Capacitance C < 4.0 pF
Options for screening in accordance with MIL-PRF-19500/474 for JAN,
JANTX, JANTXV, the prefixes respectively to part numbers.
T4-LDS-0078 Rev. 1 (082463)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
APPLICATIONS / BENEFITS
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD : Air 15kV, contact 8kW
61000-4-4 (EFT) : 40A – 5/50 ns
61000-4-5 (surge): 12A 8/20
μs
MAXIMUM RATINGS
V
BR
Reverse Breakdown Voltage 60 V min (Notes 1 & 2)
I
O
Continuous Forward Current 300 mA (Notes 1 & 3)
I
FSM
Forward Surge Current (tp=1/120 s) 500 mA (Note 1)
400 mW Power Dissipation per Junction @ 25
o
C
500 mW Power Dissipation per Package @ 25
o
C (Note 4)
Operating Junction Temperature range –65 to +150
o
C
Storage Temperature range of –65 to +200
o
C
NOTE 1:
NOTE 2:
NOTE 3:
NOTE 4:
Each Diode
Pulsed: PW = 100 ms max; duty cycle <20%
Derate at 2.4 mA/°C above +25°C
Derate at 4.0 mW/°C above +25°C
MECHANICAL AND PACKAGING
10-PIN Ceramic Flat Pack
Weight 0.25 grams (approximate)
Marking: Logo, part number, date code and dot identifying pin #1
Carrier Tubes; 19 pcs (standard)
T4-LDS-0078 Rev. 1 (082463)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25
o
C unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
V
F1
I
F
= 100 mA
(Note 1)
PART
NUMBER
1N5768
Vdc
1
MAXIMUM
FORWARD
VOLTAGE
V
F2
I
F
= 500 mA
(Note 1)
Vdc
1.5
MAXIMUM
REVERSE
CURRENT
I
R1
V
R
= 40 V
μAdc
0.1
MAXIMUM
CAPACITANCE
(PIN TO PIN)
C
t
V
R
= 0 V
F = 1 MHz
pF
4.0
MAXIMUM
FORWARD
RECOVERY
TIME
t
fr
I
F
= 500 mA
ns
40
MAXIMUM
REVERSE
RECOVERY
TIME
trr
I
F
= I
R
= 200 mA
I
rr
= 20 mA
R
L
= 100 ohms
ns
20
NOTE 1:
Pulsed: P
W
= 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
SYMBOLS & DEFINITIONS
Symbol
V
BR
V
F
I
R
I
FSM
C
t
DEFINITION
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified
current.
Maximum Reverse Current: The maximum reverse current that will flow at the specified voltage
and temperature.
Forward Surge Current: The peak forward surge current at a specified pulse width
Capacitance: The capacitance of the diode as defined @ 0 volts at a frequency of 1 MHz and stated
in picofarads.
T4-LDS-0078 Rev. 1 (082463)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
SCHEMATIC
CIRCUIT
Supply rail (+V
CC
)
I/O Port
GND (or -V
CC
)
STEERING DIODE APPLICATION
FIGURE 1
PACKAGE DIMENSIONS
.290
MAX
.019
.010
.005
MIN
.006
.003
.370
.240
5 4 3 2 1
.280
MAX
6 7 8 9 10
.125
MIN
.370
.240
.045
MAX
.050
BSC
T4-LDS-0078 Rev. 1 (082463)
.050
.005
.095
Page 4 of 4
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