Power Bipolar Transistor, 0.3A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126ML, 3 PIN
参数名称 | 属性值 |
零件包装代码 | SIP |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 0.3 A |
集电极-发射极最大电压 | 120 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 60 |
JEDEC-95代码 | TO-126 |
JESD-30 代码 | R-PSFM-T3 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 140 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | PNP |
最大功率耗散 (Abs) | 8 W |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 400 MHz |
Base Number Matches | 1 |
2SA1539D | 2SA1539E | PT7M6118NLXVE | MB9BF418S | TFS1774 | 2SA1539F | 2SA1539C | |
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描述 | Power Bipolar Transistor, 0.3A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126ML, 3 PIN | Power Bipolar Transistor, 0.3A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126ML, 3 PIN | Low Power Voltage Detector | This document states the current technical specifications regarding | Vectron International Filter specification | Power Bipolar Transistor, 0.3A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126ML, 3 PIN | Power Bipolar Transistor, 0.3A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126ML, 3 PIN |
零件包装代码 | SIP | SIP | - | - | - | SIP | SIP |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | - | - | - | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 | 3 | - | - | - | 3 | 3 |
Reach Compliance Code | unknow | unknow | - | - | - | unknow | unknow |
ECCN代码 | EAR99 | EAR99 | - | - | - | EAR99 | EAR99 |
最大集电极电流 (IC) | 0.3 A | 0.3 A | - | - | - | 0.3 A | 0.3 A |
集电极-发射极最大电压 | 120 V | 120 V | - | - | - | 120 V | 120 V |
配置 | SINGLE | SINGLE | - | - | - | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 60 | 100 | - | - | - | 160 | 40 |
JEDEC-95代码 | TO-126 | TO-126 | - | - | - | TO-126 | TO-126 |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | - | - | - | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 | - | - | - | 1 | 1 |
端子数量 | 3 | 3 | - | - | - | 3 | 3 |
最高工作温度 | 140 °C | 140 °C | - | - | - | 140 °C | 140 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | - | - | - | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | - | - | - | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | PNP | PNP | - | - | - | PNP | PNP |
最大功率耗散 (Abs) | 8 W | 8 W | - | - | - | 8 W | 8 W |
认证状态 | Not Qualified | Not Qualified | - | - | - | Not Qualified | Not Qualified |
表面贴装 | NO | NO | - | - | - | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | - | - | - | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | - | - | - | SINGLE | SINGLE |
晶体管应用 | AMPLIFIER | AMPLIFIER | - | - | - | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | - | - | - | SILICON | SILICON |
标称过渡频率 (fT) | 400 MHz | 400 MHz | - | - | - | 400 MHz | 400 MHz |
Base Number Matches | 1 | 1 | - | - | - | 1 | 1 |
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