BC847S
Elektronische Bauelemente
RoHS Compliant Product
NPN Silicon
Multi-Chip Transistor
SOT-363
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
8
o
0
o
*
Features
Power dissipation
P
CM
: 0.3 W (Tamp.= 25 C)
O
.053(1.35)
.045(1.15)
Collector current
I
CM
: 0.2 A
Collector-base voltage
V
(BR)CBO
: 50 V
Operating & Storage junction Temperature
T
j
, T
stg
: -55 C~ +150 C
O
O
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
C
1
B
2
E
2
.043(1.10)
.035(0.90)
E
1
B
1
C
2
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25 C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE(1)
V
CE(sat)
Collector-emitter saturation voltage
V
CE(sat)(2)
V
BE
Base-emitter voltage
V
BE(2)
Transition frequency
Collector output capacitance
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
O
Ic=
10
µA, I
E
=0
Ic=
10
mA, I
B
=0
I
E
=
10
µA, I
C
=0
V
CB
=
30
V, I
E
=0
V
CE
=
5
V, I
C
=
2
mA
I
C
=
10
mA, I
B
=
0.5
mA
I
C
=
100
mA, I
B
=5mA
V
CE
=
5
V, I
C
=
2
mA
V
CE
=
5
V, I
C
=
10
mA
V
CE
=
5
V, I
C
=
20
mA , f=
100
MHz
V
CB
=
10
V, I
E
=0, f=
1
MHz
50
45
6
15
110
630
0.25
0.65
0.7
0.77
200
2
nA
V
V
V
V
MHz
pF
f
T
C
ob
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page 1 of
3
BC847S
Elektronische Bauelemente
NPN Silicon
Multi-Chip Transistor
Typical Characteristics
1200
1000
800
600
25 °C
125 °C
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
V
CE
= 5.0 V
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
125 °C
β
= 10
0.15
0.1
0.05
0.1
25 °C
- 40 °C
400
- 40 °C
200
0
0.01 0.03
0.1 0.3
1
3
10
30
I
C
- COLLECTOR CURRENT (mA)
100
1
10
I
C
- COLLECTOR CURRENT (mA)
100
V
BESAT
- COLLECTOR-EMITTER VOLTAGE (V)
1
- 40 °C
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
125 °C
- 40 °C
25 °C
0.8
0.6
0.4
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
25 °C
125 °C
β
= 10
0.4
V
CE
= 5.0 V
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
40
CHARAC TERIS TICS R ELATI VE TO VALUE AT T
A
= 25 C
Contours of Constant Gain
Bandwidth Product (f
T
)
V
CE
- COLLECTOR VOLTAGE (V)
10
7
5
150 MHz
175 MHz
Normalized Collect or-Cutoff Current
vs Ambient Temperature
°
100
1000
100
3
2
125 MHz
100 MHz
75 MHz
10
1
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
1
25
50
75
100
125
T
A
- AMBIE NT TEMP ERATURE (
°
C)
150
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page
2
of
3
BC847S
Elektronische Bauelemente
NPN Silicon
Multi-chip Transistor
CHARAC TERIS TICS R ELATI VE TO VALUE AT T
A
= 25 C
Contours of Constant Gain
Bandwidth Product (f
T
)
V
CE
- COLLECTOR VOLTAGE (V)
10
7
5
150 MHz
175 MHz
Normalized Collect or-Cutoff Current
vs Ambient Temperature
°
100
1000
100
3
2
125 MHz
100 MHz
75 MHz
10
1
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
1
25
50
75
100
125
T
A
- AMBIE NT TEMP ERATURE (
°
C)
150
Noise Figure vs Frequency
10
NF - NOISE FIGURE (dB)
I
C
= 200
µA,
R
S
= 10 kΩ
I
C
= 100
µA,
R
S
= 10 kΩ
I
C
= 1.0 mA,
R
S
= 500
Ω
4
I
C
= 1.0 mA,
R
S
= 5.0 kΩ
V
CE
= 5.0V
0
0.0001
0.001
0.01
0.1
1
f - FREQUENCY (MHz)
10
100
NF - NOISE FIGURE (dB)
5
Wideband Noise Frequency
vs Source Resistance
V
CE
= 5.0 V
8
4
3
2
1
0
BANDWIDTH = 15.7 kHz
6
I
C
= 100
µA
I
C
= 30
µA
2
I
C
= 10
µA
2,000
5,000
10,000
20,000
50,000
100,000
1,000
R
S
- SOURCE RESISTANCE (
Ω
)
Power Dissipation vs
Ambient Temperature
P
D
- POWER DISSIPATION (mW)
500
400
SC70-6
300
200
100
0
0
25
50
75
100
TEMPERATURE (º C)
125
150
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page
3
of
3
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