BC847AT /BC847BT /BC847CT
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
NPN Plastic Encapsulate Transistor
FEATURES
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
A
SOT-523
Base
Emitter
Collector
3
MARKING
Product
BC847AT
BC847BT
BC847CT
Marking Code
1E
1F
1G
F
1
M
3
Top View
2
C B
1
2
K
L
E
D
G
H
J
REF.
PACKAGE INFORMATION
Package
SOT-523
MPQ
3K
LeaderSize
7’ inch
A
B
C
D
E
F
Millimeter
Min.
Max.
1.5
1.7
1.45
1.75
0.75
0.85
0.7
0.9
0.9
1.1
0.15
0.25
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
-
0.1
0.55 REF.
0.1
0.2
-
0.5 TYP.
0.25
0.325
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
( T
A
= 25°C unless otherwise noted )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
50
45
6
0.1
150
150, -55 ~ 150
Unit
V
V
V
A
mW
℃
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 1 of 3
BC847AT /BC847BT /BC847CT
Elektronische Bauelemente
NPN Plastic Encapsulate Transistor
ELECTRICAL CHARACTERISTICS
( T
A
= 25°C unless otherwise specified )
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cutoff Current
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter Voltage
BC847AT
DC Current Gain
BC847BT
BC847CT
Transition Frequency
Collector Output Capacitance
Noise Figure
BC847BT
BC847CT
f
T
C
Ob
NF
h
FE
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
V
CE(sat)
V
BE(sat)
V
BE(on)
Min.
50
45
6
-
-
-
-
-
580
-
110
200
420
100
-
-
-
Typ.
-
-
-
-
-
-
0.7
0.9
660
-
-
-
-
-
-
-
-
Max.
-
-
-
15
0.25
0.6
-
-
700
770
220
450
800
-
4.5
10
4
Unit
V
V
V
nA
V
V
mV
Test Conditions
I
C
= 10
μA,
I
E
= 0
I
C
= 10 mA, I
B
= 0
I
E
= 1
μA,
I
C
= 0
V
CB
= 30 V
I
C
= 10mA, I
B
= 0.5 mA
I
C
= 100mA, I
B
= 5 mA
I
C
= 10mA, I
B
= 0.5 mA
I
C
= 100mA, I
B
= 5 mA
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10 mA
V
CE
= 5 V, I
C
= 2 mA
MHz
pF
dB
V
CE
= 5 V, I
C
= 10 mA
f = 100MHz
V
CB
= 10 V, f=1MHz
V
CE
= 5V, BW= 200HZ,
f= 1KHz, R
S
= 2 kΩ
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 2 of 3
BC847AT /BC847BT /BC847CT
Elektronische Bauelemente
NPN Plastic Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 3 of 3
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