BC327 / BC328
Elektronische Bauelemente
PNP Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURE
Power Dissipation
G
H
CLASSIFICATION OF h
FE (1)
Product-Rank
Product-Rank
Range
BC327-16
BC328-16
100~250
BC327-25
BC328-25
160~400
BC327-40
BC328-40
K
J
A
B
D
1
Collector
2
Base
3
Emitter
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
250~630
E
C
F
Collector
1
2
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
BC327
BC328
BC327
BC328
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-50
-30
-45
-25
-5
-800
625
150, -55~150
Unit
V
V
V
mA
mW
°
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 1 of 3
BC327 / BC328
Elektronische Bauelemente
PNP Plastic-Encapsulate Transistor
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown
BC327
Voltage
BC328
Collector to Emitter Breakdown BC327
Voltage
BC328
Emitter to Base Breakdown Voltage
BC327
Collector Cut-Off Current
BC328
BC327
Collector Cut-Off Current
BC328
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
Min.
-50
-30
-45
-25
-5
-
-
-
-
-
100
40
-
-
-
260
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12
Max.
-
-
-
-
-
-0.1
-0.1
-0.2
-0.2
-0.1
630
-
-0.7
-1.2
-1.2
-
-
Unit
V
V
V
Test Conditions
I
C
= -100µA, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -45V, I
E
=0
µA
V
CB
= -25V, I
E
=0
V
CE
= -40V, I
B
=0
µA
V
CE
= -20V, I
B
=0
µA
V
EB
= -4V, I
C
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -300mA
V I
C
= -500mA, I
B
= -50mA
V I
C
= -500mA, I
B
= -50mA
V V
CE
= -1V, I
C
= -300mA
MHz V
CE
= -5V, I
C
= -10mA, f=100MHz
pF V
CB
= -10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 2 of 3
BC327 / BC328
Elektronische Bauelemente
PNP Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 3 of 3
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