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HGT1S20N60B3S

产品描述Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263, 3 PIN
产品类别分立半导体    晶体管   
文件大小44KB,共2页
制造商Harris
官网地址http://www.harris.com/
下载文档 详细参数 全文预览

HGT1S20N60B3S概述

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263, 3 PIN

HGT1S20N60B3S规格参数

参数名称属性值
包装说明SMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknow
其他特性ULTRA FAST SWITCHING
最大集电极电流 (IC)40 A
集电极-发射极最大电压600 V
配置SINGLE
JEDEC-95代码TO-263AB
JESD-30 代码R-PSSO-G2
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置SINGLE
晶体管应用POWER CONTROL
晶体管元件材料SILICON
Base Number Matches1

文档预览

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TO-251AA (D-PAK)
600V
RUGGED UFS
600V
275ns UFS
HGTD3N60C3S
2.0V
245µJ
600V
200ns UFS
600V
RUGGED UFS
TO-252AA (D-PAK)
S E M I C O N D U C TO R
I
C
AT
110
o
C
600V
275ns UFS
600V
200ns UFS
600V UFS Series IGBTs
V
CE(SAT)
Maximum at T
J
=
I
CE
= I
C110
, and V
GE
= 15V
+25
o
C
E
OFF
Typical at T
J
= +150
o
C
I
CE
= I
C110
, and V
CE(PK)
= 480V
3A
HGTD3N60C3
2.0V
245µJ
HGTD3N60B3
2.0V
200µJ
HGTD7N60C3R
2.3V
TBD
µJ
HGTD7N60C3S
2.0V
600µJ
HGTD3N60C3R
2.3V
TBD
µJ
HGTD7N60B3S
2.0V
350µJ
HGTD7N60C3RS
2.3V
TBD
µJ
HGTD3N60B3S
2.0V
200µJ
HGTD3N60C3RS
2.3V
TBD
µJ
7A
HGTD7N60C3
2.0V
600µJ
HGTD7N60B3
2.0V
350µJ
M
A
A
TO-262AA (D
2
-PAK)
600V
RUGGED UFS
600V
275ns UFS
HGT1S3N60C3DS
2.0V
245µJ
HGT1S7N60C3DS
2.0V
600µJ
HGT1S12N60C3S
HGT1S12N60C3DS
2.0V
900µJ
600V
200ns UFS
600V
RUGGED UFS
600V
275ns UFS
A
TO-263AB (D
2
-PAK)
TO-220AB
600V
200ns UFS
600V
RUGGED UFS
I
C
AT
110
o
C
600V
275ns UFS
600V
200ns UFS
3A
HGT1S3N60C3D
2.0V
245µJ
HGT1S3N60B3D
2.0V
200µJ
HGT1S7N60C3DR
2.3V
TBD
µJ
HGT1S12N60C3R
HGT1S12N60C3DR
2.3V
TBD
µJ
HGT1S20N60C3R
2.3V
3000µJ
HGT1S3N60C3DR
2.3V
TBD
µJ
HGT1S7N60B3DS
2.0V
350µJ
HGT1S12N60B3S
HGT1S12N60B3DS
2.0V
800µJ
HGT1S20N60B3S
2.0V
1050µJ
HGT1S3N60B3DS
2.0V
200µJ
HGT1S7N60C3DRS
2.3V
TBD
µJ
HGT1S12N60C3RS
HGT1S12N60C3DRS
2.3V
TBD
µJ
HGT1S20N60C3RS
2.3V
3000µJ
HGT1S3N60C3DRS
2.3V
TBD
µJ
HGTP3N60C3D
2.0V
245µJ
HGTP7N60C3
HGTP7N60C3D
2.0V
600µJ
HGTP12N60C3
HGTP12N60C3D
2.0V
900µJ
HGTP3N60B3D
2.0V
200µJ
HGTP7N60B3D
2.0V
350µJ
HGTP12N60B3
HGTP12N60B3D
2.0V
800µJ
HGTP20N60C3
1.8V
1500µJ
HGTP20N60B3
2.0V
1050µJ
HGTP3N60C3DR
2.3V
TBD
µJ
HGTP7N60C3DR
2.3V
TBD
µJ
HGTP12N60C3R
HGTP12N60C3DRS
2.3V
TBD
µJ
HGTP20N60C3R
2.3V
3000µJ
7A
HGT1S7N60C3D
2.0V
600µJ
HGT1S7N60B3D
2.0V
350µJ
12A
HGT1S12N60C3
HGT1S12N60C3D
2.0V
900µJ
HGT1S12N60B3
HGT1S12N60B3D
2.0V
800µJ
HGT1S20N60C3S
1.8V
1500µJ
2-3
TO-264
600V
RUGGED UFS
600V
275ns UFS
600V
200ns UFS
600V
RUGGED UFS
20A
HGT1S20N60C3
1.8V
1500µJ
HGT1S20N60B3
2.0V
1050µJ
PART NOMENCLATURE
HGT - G - 12 - N - 60 - C - 3 - D
HARRIS IGBT
TO-247
I
C
AT
110
o
C
600V
275ns UFS
600V
200ns UFS
12A
HGTG12N60C3D
2.0V
900µJ
HGTG20N60C3R
HGTG20N60C3DR
2.3V
3000µJ
HGTG12N60B3D
2.0V
800µJ
HGTG12N60C3DR
2.3V
TBD
µJ
PACKAGE
D: 3 Lead TO-251/TO-252
1S: 3 Lead TO-262/TO-263
P: 3 Lead TO-220
G: 3 Lead TO-247
1Y: 3 Lead TO-264
CONTINUOUS CURRENT
Rating at T
C
= +110
o
C
POLARITY
N-Channel or P-Channel
OPTIONS
L: Logic Level Gate
D: Integral Reverse Diode
S: Surface Mount
C: Current Sense
V: Voltage Clamping
R: Rugged IGBT
20A
HGTG20N60C3
HGTG20N60C3D
1.8V
1500µJ
HGTG27N60C3R
HGTG27N60C3DR
2.3V
2000µJ
HGTG40N60C3R
2.3V
TBD
µJ
HGTG20N60B3
HGTG20N60B3D
2.0V
1050µJ
1: First Generation
2: Second Generation
3: Third Generation
30A
HGTG30N60C3
HGTG30N60C3D
1.8V
2500µJ
HGTG30N60B3
HGTG30N60B3D
2.2V
1700µJ
40A
HGTG40N60C3
1.6V
3300µJ
HGTG40N60B3
2.0V
2500µJ
HGT1Y40N60C3D HGT1Y40N60B3D HGT1Y40N60C3DR
1.6V
3300µJ
2.0V
2500µJ
2.3V
TBD
µJ
VOLTAGE BREAKDOWN/10
i.e. (60, 120)
MAX FALL TIME AT
T
J
= +150
o
C
A: 100ns
E:
≤1µs
B: 200ns
F:
≤2µs
C: 500ns
G:
≤5µs
D: 750ns
LC96585.1

 
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