SURMOUNT
TM
Low and Medium & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
Features
•
Extremely Low Parasitic Capitance and
Inductance
•
Surface Mountable in Microwave Circuits, No
Wirebonds Required
•
Rugged HMIC Construction with Polyimide
Scratch Protection
•
Reliable, Multilayer Metalization with a Diffusion
•
Barrier, 100% Stabilization Bake (300°C, 16
hours)
•
Lower Susceptibility to ESD Damage
MA4E2508 Series
V2
The MA4E2508 Family of SurMount Schottky diodes
are recommended for use in microwave circuits
through Ku band frequencies for lower power
applications such as mixers, sub-harmonic mixers,
detectors and limiters. The HMIC construction
facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Surmount
diode, which can be connected to a hard or soft
substrate circuit with solder.
Case Style 1112
A
Description and Applications
The MA4E2508 SurMount™ Anti-Parallel Diode Series
are Silicon Low, Medium & High Barrier Schottky
Devices fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC) process. HMIC
circuits consist of Silicon pedestals which form
diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, low loss,
microstrip transmission medium. The combination of
silicon and glass allows HMIC devices to have
excellent loss and power dissipation characteristics
in a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of a
beam lead device coupled with the superior
mechanical performance of a chip. The SurMount
structure employs very low resistance silicon vias to
connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic
discharge than conventional beam lead Schottky
diodes.
The multi-layer metalization employed in the
fabrication of the Surmount Schottky junctions
includes a platinum diffusion barrier, which permits
all devices to be subjected to a 16-hour
non-operating stabilization bake at 300°C.
The “ 0502 ” outline allows for Surface Mount
placement and multi- functional polarity orientations.
B
C
D
E
D
Inches
Dim
A
B
C
D Sq.
E
Min.
0.0445
0.0169
0.0040
0.0128
0.0128
Max.
0.0465
0.0189
0.0080
0.0148
0.0148
Millimeters
Min.
1.130
0.430
0.102
0.325
0.325
Max.
1.180
0.480
0.203
0.375
0.375
Equivalent Circuit
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
SURMOUNT
TM
Low and Medium & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
Electrical Specifications @ 25 °C
Model
Number
MA4E2508L
Type
Recommended
Frequency Range
DC - 18 GHz
Vf @ 1 mA
( mV )
330 Max
300 Typ
470 Max
420 Typ
700 Max
650 Typ
Ct @ 0 V
( pF )
0.24 Max
0.18 Typ
0.24 Max
0.18 Typ
0.24 Max
0.18 Typ
MA4E2508 Series
V2
Low
Barrier
Medium
Barrier
High
Barrier
Rt Slope Resistance
( Vf1 - Vf2 ) / (10.5mA-9.5mA )
(
Ω
)
16 Typ
20 Max
12 Typ
18 Max
6 Typ
8 Max
MA4E2508M
MA4E2508H
DC - 18 GHz
DC - 18 GHz
Rt is the dynamic slope resistance where Rt = Rs + Rj , where
Rj =26 / Idc ( Idc is in mA) and Rs is the Ohmic Resistance.
Max Forward Voltage Difference
∆Vf
@ 1 mA: 10 mV
Die Bonding
Handling
All semiconductor chips should be handled with care
to avoid damage or contamination from perspiration
and skin oils. The use of plastic tipped tweezers or
vacuum pickups is strongly recommended for
individual components. The top surface of the die
has a protective polyimide coating to minimize
damage.
The rugged construction of these SurMount devices
allows the use of standard handling and die attach
techniques. It is important to note that industry
standard electrostatic discharge (ESD) control is
required at all times, due to the sensitive nature of
Schottky junctions.
Bulk handling should insure that abrasion and
Die attach for these devices is made simple through
the use of surface mount die attach technology.
Mounting pads are conveniently located on the
bottom surface of these devices, and are opposite
the active junction. The devices are well suited for
higher temperature solder attachment onto hard
substrates. 80Au/20Sn and Sn63/Pb37/Ag2 solders
are acceptable for usage.
For Hard substrates, we recommend utilizing a
vacuum tip and force of 60 to 100 grams applied
uniformly to the top surface of the device, using a
hot gas bonder with equal heat applied across the
bottom mounting pads of the device. When soldering
to soft substrates, it is recommended to use a
lead-tin interface at the circuit board mounting pads.
Position the die so that its mounting pads are
aligned with the circuit board mounting pads. Reflow
the solder paste by applying Equal heat to the circuit
at both die-mounting pads. The solder joint must Not
be made one at a time, creating un-equal heat flow
and thermal stress. Solder reflow should Not be
performed by causing heat to flow through the top
surface of the die. Since the HMIC glass is
transparent, the edges of the mounting pads can be
visually inspected through the die after die attach is
completed.
Absolute Maximum Ratings @ 25 °C
(Unless Otherwise Noted)
1
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Forward Current
Reverse Voltage
RF C.W. Incident Power
RF & DC Dissipated Power
Absolute Maximum
-40 °C to +125 °C
-40 °C to +150 °C
+175 °C
20 mA
5V
+ 20 dBm
50 mW
1. Operation of this device above any one of these parameters
may cause permanent damage.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
SURMOUNT
TM
Low and Medium & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
MA4E2508L Low Barrier SPICE PARAMETERS (Per Diode)*
Is
(nA)
26
Rs
(
Ω
)
12.8
N
1.20
Cj0
( pF )
1.0 E-2
M
0.5
Ik
(mA)
14
Cpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
0.5
FC
MA4E2508 Series
V2
BV
(V)
5.0
IBV
(mA)
1.0 E-2
MA4E2508M Medium Barrier SPICE PARAMETERS (Per Diode)*
Is
(nA)
5 E-1
Rs
(
Ω
)
9.6
1.20
N
Cj0
( pF )
1.0 E-02
M
0.5
Ik
(mA)
10
Cpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
0.5
FC
BV
(V)
5.0
IBV
(mA)
1.0 E-2
MA4E2508H Medium Barrier SPICE PARAMETERS (Per Diode)*
Is
(nA)
5.7 E-2
Rs
(
Ω
)
6.5
N
1.20
Cj0
( pF )
1.0 E-02
M
0.5
Ik
(mA)
4
Cpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
0.5
FC
BV
(V)
5.0
IBV
(mA)
1.0 E-2
* Spice parameters ( PER DIODE ) are based on the MA4E2502 SERIES datasheet.
Circuit Mounting Dimensions (Inches)
Ordering Information
Part Number
Package
Wafer on Frame
Die in Carrier
Tape/Reel
Wafer on Frame
Die in Carrier
Tape/Reel
Wafer on Frame
Die in Carrier
Tape/Reel
0.020
0.020
MA4E2508L-1112W
MA4E2508L-1112
0.020
0.020
MA4E2508L-1112T
MA4E2508M-1112W
MA4E2508M-1112
0.013
MA4E2508M-1112T
MA4E2508H-1112W
MA4E2508H-1112
MA4E2508H-1112T
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
SURMOUNT
TM
Low and Medium & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
MA4E2508 Schematic Per Diode
Ct
MA4E2508 Series
V2
Ls
Rs
Rj
Schematic Values per Diode
Model
Number
MA4E2508L
MA4E2508M
MA4E2508H
Ls (nH)
0.8
0.8
0.8
Rs (
Ω
)
12.8
9.6
6.5
Rj (
Ω
)
26 / Idc
26 / Idc
26 / Idc
Ct ( pF )
0.09
0.09
0.09
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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