PTFB241402F
Customer-Specific Spec — Not for General Release
High Power RF LDMOS Field Effect Transistor
140 W, 2300 – 2400 MHz
Description
The PTFB241402F integrates two LDMOS FETs into one open-cavity
ceramic package. It is designed for cellular amplifier applications in
the 2300 to 2400 MHz frequency band. Manufactured with Infineon’s
advanced LDMOS process, this device offers excellent thermal
performance and superior reliability.
PTFB241402F
Package H-37248-4
CW Performance, Single Side
V
DD
= 30 V, I
DQ
= 660 mA
Features
•
•
60
55
50
Broadband internal matching
Typical CW performance, single side
- Output power (1dB compression) = 70 W
- Efficiency = 55%
Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability
Capable of handling 10:1 VSWR @ 30 V, 70 W
(CW) output power
Pb-free and RoHS compliant
17.4
17.2
17.0
•
Efficiency (%)
Gain (dB)
16.8
16.6
16.4
16.2
16.0
15.8
15.6
40
Gain
45
40
35
2320 MHz
2350 MHz
2380 MHz
44
45
46
47
48
49
30
25
20
15
•
•
•
•
Efficiency
41
42
43
Output Power (dBm)
RF Characteristics
Two-tone Measurements
(tested in Infineon test fixture, combined outputs)
V
DD
= 30 V, I
DQ
= 1200 mA, P
OUT
= 110 W PEP, ƒ = 2370 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
16.5
34.5
—
Typ
17
37
–32
Max
—
—
–30
Unit
dB
%
dBc
η
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 03, 2010-04-19
PTFB241402F
Customer-Specific Spec — Not for General Release
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 660 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.3
2.8
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 140 W CW )
Symbol
V
DSS
V
GS
T
J
T
STG
R
θJC
Value
65
–6 to +10
200
–40 to +150
0.38
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB241402F V1
PTFB241402F V1 R250
Package Outline
H-37248-4
H-37248-4
Package Description
Thermally-enhanced earless flange
Thermally-enhanced earless flange
Shipping
Tray
Tape & Reel, 250 pcs
*See Infineon distributor for future availability.
Data Sheet
2 of 13
Rev. 03, 2010-04-19
PTFB241402F
Customer-Specific Spec — Not for General Release
Typical Performance
(data taken in a production test fixture)
CW Performance, Single Side
V
DD
= 30 V, I
DQ
= 660 mA
17.5
CW Sweep at P
-1dB,
Single Side
V
DD
= 30 V, I
DQ
= 660 mA
60
18.0
60
Gain
17.0
50
17.0
50
16.0
Gain
-25°C
25°C
90°C
45
46
47
48
49
40
16.5
40
15.0
30
16.0
Efficiency
Efficiency
14.0
40
41
42
43
44
2320 MHz
2350 MHz
2380 MHz
43
44
45
46
47
48
49
30
20
15.5
40
41
42
20
Output Power (dBm)
Output Power (dBm)
CW Gain & Efficiency
vs. Output Power & V
DD,
Single Side
ƒ = 2350 MHz, I
DQ
= 660 mA
17.5
60
18.0
17.5
Small Signal CW Gain &
Input Return Loss, Single Side
V
DD
= 30 V, I
DQ
= 660 mA
0
Gain
17.0
50
Gain
16.5
16.0
15.5
15.0
40
17.0
16.5
16.0
15.5
-10
-15
-20
-25
Efficiency
V
DD
= 32 V
V
DD
= 30 V
V
DD
= 28 V
39 40 41 42 43 44 45 46 47 48 49 50
30
20
10
IRL
15.0
2150
2250
2350
2450
-30
2550
Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 13
Rev. 03, 2010-04-19
Input Return Loss (dB)
-5
Power Gain (dB)
Power Gain (dB)
Efficiency (%)
Drain Efficiency (%)
Efficiency (%)
Gain (dB)
Gain (dB)
PTFB241402F
Customer-Specific Spec — Not for General Release
Typical Performance
(cont.)
Two-tone Performance
at Various I
DQ,
Single Side
ƒ = 2350 MHz, V
DD
= 30 V, I
DQ
= Varying
-20
-25
560 mA
610 mA
40
50
2320 MHz
2350 MHz
2380 MHz
Two-tone Performance
at Selected Frequencies, Single Side
V
DD
= 30 V, I
DQ
= 660 mA, 1 MHz Spacing
0
Efficiency
3rd Order IMD (dBc)
-10
-20
-30
-35
-40
-45
-50
-55
-60
34
36
Efficiency (%)
660 mA
710 mA
760 mA
IMD3
20
10
0
-30
-40
-50
IMD5
-10
-60
38
39
40
41
42
43
44
45
46
47
38
40
42
44
46
48
Average Output Power (dBm)
Average Output Power (dBm)
Wimax Performance, Single Side
V
DD
= 30 V, I
DQ
= 680 mA, modulation =
64 QAM2/3, channel bandwidth = 1.75 MHz,
sample rate = 2 MHz)
ƒ = 2.32 GHz
ƒ = 2.35 GHz
ƒ = 2.38 GHz
25
20
-20
-25
-30
Efficiency (%)
15
10
5
Efficiency
-35
-40
EVM
0
24
26
28
30
32
34
36
38
40
-45
Average Output Power (dBm)
Data Sheet
EVM (dBc)
4 of 13
Rev. 03, 2010-04-19
IMD (dBc)
30
FPGA/CPLD
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