PTMA080302M
Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier
30 W, 700 – 1000 MHz
Description
The PTMA080302M is a wideband, matched, 30-watt, 2-stage
LDMOS integrated amplifier intended for use in all typical modulation
formats from 700 to 1000 MHz. This device is offered in a 20-lead,
thermally-enhanced, overmolded package for cool and reliable
operation.
PTMA080302M
Package PG-DSO-20-63
Features
Broadband Performance
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA,
fixture tuned for 920 - 960 MHz
35
30
25
10
5
•
•
•
Designed for wide RF modulation bandwidths,
and low memory effects
On-chip matching, integrated input DC block,
50-ohm input and ~ 8-ohm output
Typical GSM/EDGE performance, 940 MHz, 28 V
- Output power = 15 W Avg.
- Linear gain = 31 dB
- Power added efficiency = 36%
- EVM at 15 W = 1.7 %
- ACPR at 400 kHz = –61 dBc
- ACPR at 600 kHz = –73 dBc
Typical CW performance at 940 MHz, 28 V
- Output power at P–1dB = 32 W
- Linear gain (1 W) = 31 dB
- Power added efficiency = 46%
Capable of handling 10:1 VSWR @ 28 V, 30 W
(CW) output power
Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
RoHS-compliant package
Gain
0
-5
-10
-15
20
15
10
5
Return Loss (dB)
Gain (dB)
•
Return Loss
-20
0
-25
700 750 800 850 900 950 1000 1050 1100
•
•
•
Frequency (MHz)
RF Characteristics
GSM/EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA, ƒ = 920 to 960 MHz, P
OUT
= 15 W Avg.
Characteristic
Gain
Power-added Efficiency
Error Vector Magnitude
Symbol
G
ps
PAE
EVM (RMS)
Min
—
—
—
Typ
31
36
1.7
Max
—
—
—
Unit
dB
%
%
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 05.1, 2010-11-09
PTMA080302M
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
GSM/EDGE Measurements
(cont.)
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA, ƒ = 920 to 960 MHz, P
OUT
= 15 W Avg.
Characteristic
Modulation Spectrum
400 kHz offset
600 kHz offset
Input Return Loss
Gain Flatness
Symbol
ACPR
1
ACPR
2
IRL
∆G
Min
—
—
—
—
Typ
–61
–73
–15
0.2
Max
—
—
—
—
Unit
dBc
dBc
dB
dB
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA, P
OUT
= 32 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz
Characteristic
Gain
Power-added Efficiency
Intermodulation Distortion
Symbol
G
ps
PAE
IMD
Min
31
34
—
Typ
32
35
–33
Max
—
—
–31
Unit
dB
%
dBc
Single-tone Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA, ƒ = 940 MHz
Characteristic
Gain
Power-added Efficiency
Output Power
Symbol
G
ps
PAE
P–1dB
Min
—
—
—
Typ
32
46
31
Max
—
—
—
Unit
dB
%
W
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
R
DS(on)
V
GS
Min
65
—
—
—
—
2.0
Typ
—
—
—
0.25
1.85
2.5
Max
—
1.0
10.0
—
—
3.0
Unit
V
µA
µA
Ω
Ω
V
On-State Resistance
Stage 1
Stage 2
V
GS
= 10 V, V
DS
= 0.1 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V,
I
DQ1
= 120 mA, I
DQ2
= 280 mA
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0 V
I
GSS
—
—
1.0
µA
Data Sheet
2 of 11
Rev. 05.1, 2010-11-09
PTMA080302M
Confidential, Limited Internal Distribution
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Input Power
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C) Stage 1
Stage 2
T
STG
R
θJC
R
θJC
Symbol
V
DSS
V
GS
T
J
P
IN
P
D
Value
65
–0.5 to +12
200
16
129.5
0.74
–40 to +150
6.7
1.7
Unit
V
V
°C
dBm
W
W/°C
°C
°C/W
°C/W
Moisture Sensitivity Level
Level
3
Test Standard
IPC/JEDEC J-STD-020
Package Temperature
260
Unit
°C
Ordering Information
Type and Version
PTMA080302M V1
Package Outline
PG-DSO-20-63
Package Description
Copper heat slug, plastic EMC body
Shipping
Tape
Data Sheet
3 of 11
Rev. 05.1, 2010-11-09
PTMA080302M
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
CW Power Performance
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA,
ƒ = 920, 940, 960 MHz
36
32
28
70
60
Two-tone Drive-up
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA,
selected frequencies
-20
50
40
30
20
Power Added Efficiency (%)
Gain
Efficiency
-30
50
40
30
24
20
16
12
8
28
32
-40
-50
IMD3
920 MHz
940 MHz
960 MHz
36
40
44
48
20
10
0
Efficiency
-60
-70
27
29
31
33
35
37
39
41
43
10
0
Output Power (dBm)
Output Power (dBm)
Power Sweep at Selected Drain Voltages
V
DD1
=28 V, V
DD2
= 24 V, 28 V and 32 V,
I
DQ1
= 120 mA, ƒ = 940 MHz
34
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA,
series show ƒ = 942 MHz at selected temperatures
25 °C
42
40
Power Gain (dB)
32
38
36
–25 °C
25 °C
90 °C
Gain
Gain (dB)
30
34
32
30
28
26
32 V
28 V
24 V
28
26
29
31
33
35
37
39
41
43
45
47
24
30
32
34
36
38
40
42
44
46
Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 11
Rev. 05.1, 2010-11-09
Power Added Efficiency (%)
920 MHz
940 MHz
960 MHz
IMD3 (dBc)
Gain (dB)
PTMA080302M
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA,
series show ƒ = 942 MHz at selected temperatures
Edge Modulation Spectrum (dBc)
45
-40
45
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA,
series are at selected frequencies
-40
Power Added Efficiency (%)
35
30
25
20
15
10
5
0
30
-50
-55
-60
-65
Power Added Efficiency (%)
40
–25 °C
25 °C
90 °C
400 kHz
Efficiency
-45
40
35
30
25
20
15
10
5
0
30
925.2 MHz
942.6 MHz
959.8 MHz
Efficiency
-45
-50
-55
-60
-65
600 kHz
-70
-75
-80
-85
400 kHz
-70
-75
600 kHz
32
34
36
38
40
42
44
-80
-85
32
34
36
38
40
42
44
Output Power (dBm)
Output Power (dBm)
EDGE EVM
V
D D
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA,
series show ƒ = 942 MHz at selected temperatures
70
14
EDGE EVM
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA,
series are at selected frequencies
70
14
12
10
Power Added Efficiency (%)
Power Added Efficiency (%)
50
40
30
20
10
0
30
10
Error Vector Magnitude(%)
60
12
60
50
40
30
20
10
0
30
Efficiency
8
6
4
Efficiency
8
6
4
EVM
2
0
EVM
2
0
32
34
36
38
40
42
44
32
34
36
38
40
42
44
Output Power (dBm)
Output Power (dBm)
Data Sheet
5 of 11
Rev. 05.1, 2010-11-09
Error Vector Magnitude(%)
–25 °C
25 °C
90 °C
925.2 MHz
942.6 MHz
959.8 MHz
Edge Modulation Spectrum (dBc)
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