PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistors
340 W, 1805 – 1880 MHz
Description
The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 1805 to 1880 MHz frequency band. Features include input and
output matching, high gain and thermally-enhanced package with
slotted and earless flanges. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal performance
and superior reliability.
PTFB183404E
Package H-36275-8
PTFB183404F
Package H-37275-6/2
V
DD
= 30 V, I
DQ
= 2.6A, ƒ = 1880 MHz, 3GPP
WCDMA, PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84 MHz
-25
-30
35
30
Two-carrier WCDMA 3GPP Drive-up
Features
•
•
•
Broadband internal input and output matching
Wide video bandwidth
Typical single-carrier WCDMA performance,
1880 MHz, 30 V
- Output power = 125 W
- Efficiency = 31%
- Gain = 17 dB
- PAR = 5.5 dB @ 0.01% CCDF probability
- ACPR @ 5 MHz = –37 dBc
Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
Capable of handling 10:1 VSWR @ 30 V, 340 W
(CW) output power
Integrated ESD protection
Excellent thermal stability
Pb-free and RoHS compliant
-40
-45
-50
-55
-60
36
IMD Up
IMD
Low
20
15
Drain Efficiency (%)
IMD & ACPR (dBc)
-35
25
•
•
•
•
•
ACPR
Efficiency
38
40
42
44
46
48
50
52
10
5
0
Average Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 2.6 A, P
OUT
= 80 W average, ƒ
1
= 1870 MHz, ƒ
2
= 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
16
24
—
Typ
17
25.5
–35
Max
—
—
–32
Unit
dB
%
dBc
h
D
IMD
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 18
Rev. 04, 2010-11-17
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Single-carrier WCDMA Performance
(not subject to production test – verified by design / characterization in Infineon test
fixture)
V
DD
= 30 V, I
DQ
= 2.6 A, IQ clipping, channel bandwidth = 3.84 MHz, Input signal PAR = 7.5 dB @ 0.01% CCDF probability
Characteristic
Gain
Conditions
P
OUT
(AVG) = 49 dBm
P
OUT
(AVG) = 51 dBm
Symbol
G
ps
1805 MHz
(Typ)
17.1
17.0
1842 MHz
(Typ)
17.3
17.15
24.5
30
6.5
5.5
–42.5
–35
1880 MHz
(Typ)
17.5
17.4
24
30
6.5
5.5
–41
–34
Drain Efficiency
P
OUT
(AVG) = 49 dBm
P
OUT
(AVG) = 51 dBm
h
D
25
31
Output PAR at 0.01%
P
OUT
(AVG) = 49 dBm
P
OUT
(AVG) = 51 dBm
dB
6.5
5.5
Adjacent Channel Power Ratio
P
OUT
(AVG) = 49 dBm
P
OUT
(AVG) = 51 dBm
ACPR
–43
–36
Two-tone Specifications
(not subject to production test – verified by design / characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 2.6 A, P
OUT
= 310 W PEP, ƒ = 1880 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
17.5
35
30
Max
—
—
—
Unit
dB
%
dBc
h
D
IMD
DC Characteristics
Characteristic
Conditions
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.05
2.8
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
W
V
µA
Drain-Source Breakdown Voltage V
GS
= 0 V, I
DS
= 10 mA
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 2.6 A
V
GS
= 10 V, V
DS
= 0 V
Data Sheet
2 of 18
Rev. 04, 2010-11-17
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 340 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
Value
65
–6 to +10
200
–40 to +150
0.2
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB183404E V1
Package Outline
H-36275-8
Package Description
Ceramic open-cavity, slotted push-pull
Ceramic open-cavity, slotted push-pull
Ceramic open-cavity, earless push-pull
Ceramic open-cavity, earless push-pull
Shipping
Tray
Tape & Reel, 250 pcs
Tray
Tape & Reel, 250 pcs
PTFB183404E V1 R250 H-36275-8
PTFB183404F V2
H-37275-6/2
PTFB183404F V2 R250 H-37275-6/2
Typical Performance
(data taken in a production test fixture)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 2.6 A, 3GPP WCDMA,
PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84 MHz
1880 Lower
1880 Upper
1842.5 Lower
1805 Lower
1842.5 Upper
-35
18
V
DD
= 30 V, I
DQ
= 2.6 A, ƒ = 1880 MHz, 3GPP
WCDMA, PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84MHz
19
40
Two-carrier WCDMA 3GPP
-25
-30
IMD (dBc)
Gain (dB)
-40
-45
-50
-55
36
38
1805 Upper
Gain
17
20
16
10
Efficiency
15
40
42
44
46
48
50
52
36
38
40
42
44
46
48
50
52
0
Average Output Power (dBm)
Average Output Power (dBm)
Data Sheet
3 of 18
Rev. 04, 2010-11-17
Drain Efficiency (%)
30
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
V
DD
= 30 V, I
DQ
= 2.6 A, P
O UT
= 170 W
60
50
40
30
20
10
1730
1767.5
1805
1842.5
1880
1917.5
1955
0
-10
-20
-30
-25
40
35
30
Two-tone Broadband
Gain, Efficiency & Return Loss
vs. Frequency
V
DD
= 30 V, I
DQ
= 2.6 A,
ƒ
1
= 1880 MHz, ƒ
2
= 1879 MHz
Two-tone Drive-up
Return Loss (dB), IMD (dBc)
RL
Efficiency
-30
-35
-40
Gain (dB) / Efficiency (%)
IMD (dBc)
IMD3
-45
-50
-55
-60
-65
39
41
43
45
47
49
51
53
55
20
15
10
IMD3
Gain
-40
-50
Efficiency
5
0
Frequency (MHz)
Output Power, PEP (dBm)
V
DD
= 30 V, I
DQ
= 2.6 A,
ƒ
1
= 1880 MHz, ƒ
2
= 1879 MHz
19
18
17
16
50
40
30
20
19
18
Two-tone Drive-up
Two-tone Drive-up (over temp)
(P
O UT
-max 3rd order IMD @ -30dBc)
V
DD
= 30 V, I
DQ
= 2.6 A,
ƒ
1
= 1842.5 MHz, ƒ
2
= 1841.5 MHz
50
40
30
20
10
0
39
41
43
45
47
49
51
53
55
57
Gain
Gain
Efficiency (%)
Gain (dB)
17
16
15
14
Efficiency
15
14
40
42
44
46
48
50
52
54
56
10
0
Efficiency
+85°C
+25°C
-30°C
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Data Sheet
4 of 18
Rev. 04, 2010-11-17
Efficiency (%)
Gain (dB)
Efficiency (%)
25
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
V
DD
= 30 V, I
DQ
= 2.6 A, tone spacing = 1 MHz
-20
1880MHz
1842.5MHz
1805MHz
-20
-30
Two-tone Drive-up at
Selected Frequencies
Intermodulation Distortion
vs. Output Power
V
DD
= 30 V, I
DQ
= 2.6 A,
ƒ
1
= 1880 MHz, ƒ
2
= 1879 MHz
3rd Order
5th
7th
IMD 3rd Order (dBc)
-30
-40
IMD (dBc)
-40
-50
-60
-70
-50
-60
39
41
43
45
47
49
51
53
55
57
39
41
43
45
47
49
51
53
55
57
Output Power, PEP (dBm)
Output Power, PEP (dBm)
ƒ = 1842.5 MHz, P
O UT
= 330 W (PEP),
V
DD
= 30 V, I
DQ
= 2.6 A
-10
-15
-20
-25
-30
-25
Intermodulation Distortion
vs. Tone Spacing
Single-carrier Drive-up, 1880 MHz
V
DD
= 30 V, I
DQ
= 2.6 A, ƒ = 1880 MHz,
3GPP WCDMA signal, PAR = 7.5:1,
BW = 3.84 MHz
35
30
IMD Lower
IMD Upper
-30
-35
IMD (dBc)
-35
-40
-45
-50
-55
-60
1
IMD3
IMD5
IMD7
10
100
-40
-45
-50
-55
-60
36
38
40
42
44
46
48
50
52
54
20
15
ACP Low
ACP Up
10
5
0
Two Tone Spacing (MHz)
Average Output Power (dBm)
Data Sheet
5 of 18
Rev. 04, 2010-11-17
Drain Efficiency (%)
Efficiency
25
ACP (dBc)
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