PTFA220121M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor
12 W, 700 – 2200 MHz
Description
The PTFA220121M is an unmatched 12-watt LDMOS FET intended
for power amplifier applications in the 700 to 2200 MHz. This LDMOS
device offers excellent gain, efficiency and linearity performance in
a small overmolded plastic package.
PTFA220121M
Package PG-SON-10
Two-tone Drive-up
V
DD
= 28 V, I
DQ
= 150 mA,
ƒ
1
= 876.95 MHz, ƒ
2
= 877.05 MHz
-10
-15
-20
50
45
40
35
30
25
20
Features
•
Typical two-carrier WCDMA performance at 2140
MHz, 8 dB PAR
- P
OUT
= 33 dBm Avg
- ACPR = –45.5 dBc
Typical two-carrier WCDMA performance at 877
MHz, 8 dB PAR
- P
OUT
= 33 dBm Avg
- ACPR = –44.5 dBc
Typical CW performance, 2140 MHz, 28 V
- P
OUT
= 41.6 dBm
- Efficiency = 53.5%
- Gain = 15.5 dB
Typical CW performance, 877 MHz, 28 V
- P
OUT
= 41.8 dBm
- Efficiency = 60%
- Gain = 19.9 dB
Capable of handling 10:1 VSWR @ 28 V, 12 W
(CW) output power
Integrated ESD protection : Human Body Model,
Class 2 (minimum)
Excellent thermal stability
Pb-free and RoHS compliant
•
Efficiency (%)
IMD (dBc)
-25
-30
-35
-40
-45
-50
33
34
35
36
Efficiency
•
IMD3
15
10
•
37
38
39
40
41
42
Output Power, PEP (dBm)
•
•
•
•
RF Characteristics
Two-tone Measurements
(not
subject to production test - verified by design / characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 150 mA, P
OUT
= 12 W PEP, ƒ = 877 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
20
41
—
Typ
20.5
42.5
–33
Max
—
—
–32
Unit
dB
%
dBc
η
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
RF Characteristics
Two-tone Measurements
(not
subject to production test - verified by design / characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 150 mA, P
OUT
= 9.3 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
16.2
37
–29.4
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 A
V
DS
= 28 V, I
DQ
= 150 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.0
—
Typ
—
—
2.01
2.5
—
Max
—
1.0
—
3.0
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 12 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
θJC
Value
65
–0.5 to +12
175
–40 to +150
3.4
Unit
V
V
°C
°C
°C/W
Moisture Sensitivity Level
Level
3
Test Standard
IPC/JEDEC J-STD-020
Package Temperature
260
Unit
°C
Ordering Information
Type and Version
Package Outline
Package Description
Molded plastic, SMD
Shipping
Tape & Reel, 500 pcs
PTFA220121M V4
V4 R250
PG-SON-10
*See Infineon distributor for future availability.
Data Sheet
2 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Typical Performance, 877 MHz
(data taken in Infineon test fixture)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 150 mA, ƒ = 877 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
60
50
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
60
Two-carrier WCDMA 3GPP
V
DD
= 28 V, I
DQ
= 150 mA, ƒ = 877 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
23
22
IMD Up
55
45
40
35
Drain Efficiency (%)
IMD & ACPR (dBc)
Gain
Gain (dB)
21
20
19
40
30
20
Efficiency
IMD Low
ACPR
32
33
34
35
36
37
38
39
40
41
30
25
20
15
10
Efficiency
18
29
31
33
35
37
39
41
10
-50
Output Power (dBm)
Output Power (dBm)
Two-tone Drive-up
V
DD
= 28 V, I
DQ
= 150 mA,
ƒ
1
= 876.95 MHz, ƒ
2
= 877.05 MHz
22
50
22.0
21.5
CW Performance
Gain & Eff. vs. Output Power & V
DD
I
DQ
= 150 mA,
ƒ = 877 MHz
70
V
DD
= 32 V
V
DD
= 28 V
V
DD
= 24 V
60
50
Power Gain (dB)
21
Gain
40
Efficiency (%)
Gain (dB)
21.0
20
30
Gain
20.5
20.0
19.5
40
30
20
19
Efficiency
20
Efficiency
18
33
34
35
36
37
38
39
40
41
42
10
19.0
30
32
34
36
38
40
42
44
10
Output Power, PEP (dBm)
Output Power (dBm)
Data Sheet
3 of 19
Rev. 07, 2010-04-15
Efficiency (%)
Drain Efficiency (%)
50
PTFA220121M
Confidential, Limited Internal Distribution
Typical Performance, 877 MHz
(cont.)
Small Signal CW
Gain & Input Return Loss
V
DD
= 28 V, I
DQ
= 150 mA
22
20
0
-5
-10
-15
Intermodulation Distortion
vs. Output Power
V
DD
= 28 V, I
DQ
= 150 mA,
ƒ
1
= 876.95 MHz, ƒ
2
= 877.05 MHz
3rd Order
-20
Power Gain (dB)
-30
-40
5th
18
16
14
12
727
-50
7th
IRL
-20
-25
1027
-60
33
34
35
36
37
38
39
40
41
42
827
927
Output Power, PEP (dBm)
Frequency (MHz)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
Normalized Bias Voltage (V)
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
0.15 A
0.30 A
0.60 A
0.75 A
0.90 A
1.05 A
1.20 A
0
20
40
60
80
100
Case Temperature (°C)
Data Sheet
4 of 19
Rev. 07, 2010-04-15
Input Return Loss (dB)
Gain
IMD (dBc)
PTFA220121M
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Frequency
MHz
720
820
869
894
920
940
960
1675
1805
1880
1930
1990
2110
2170
2300
2400
2500
2600
2700
R
1.1
1.0
1.3
1.2
1.4
1.5
1.4
1.6
2.0
2.0
2.2
2.6
2.5
2.0
1.7
2.2
2.5
2.4
1.9
Z Source
Ω
jX
7.7
6.4
5.0
3.6
3.5
3.3
2.8
0.3
0.3
0.3
–0.9
–2.0
–3.1
–2.6
–1.7
–2.5
–4.5
–4.1
–3.1
Z Load
Ω
R
12.0
12.4
10.8
9.3
9.1
9.1
8.9
5.0
4.7
4.7
4.2
3.8
3.8
3.6
3.3
3.2
3.0
2.7
2.3
jX
4.8
4.0
5.9
6.7
6.7
6.9
6.3
5.3
3.2
2.9
3.0
1.8
1.8
1.9
1.6
0.5
0.5
1.2
1.4
Z
0
= 50
Ω
S
G
D
Z Source
Z Load
-
W
AV
E
LE
NGT
H
S T
OW
A RD
GEN
E
RA
T
OR
--->
D
L
OA
D
-
S
T
OW
AR
NGT
H
LE
Z Source
720 MHz
0.0
0.1
0.2
0.3
0.4
2700 MHz
0.1
2700 MHz
Data Sheet
-
WA
VE
5 of 19
0.5
0. 2
Z Load
0 .1
720 MHz
Rev. 07, 2010-04-15
51单片机
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