PTFA182001E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
200 W, 1805 – 1880 MHz
Description
The PTFA182001E is a 200-watt LDMOS FET intended for EDGE
applications from 1805 to 1880 MHz. Features include input and output
matching, and thermally-enhanced single-ended package with a
slotted flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFA182001E
Package H-30260-2
2-Tone Drive-up
V
DD
= 30 V, I
DQ
= 1600 mA,
ƒ = 1840 MHz, tone spacing = 1 MHz
-25
45
Features
•
•
•
Drain Efficiency (%)
Pb-free, RoHS-compliant and thermally-enhanced
package
Broadband internal matching
Typical EDGE performance at 1836.6 MHz, 30 V
- Average output power = 50 dBm
- Linear gain = 16.3 dB
- Efficiency = 37%
- EVM = 3.1%
- 400 kHz modulation = –61 dBc
- 600 kHz modulation = –76 dBc
Typical CW performance, 1880 MHz, 30 V
- Output power at P–1dB = 220 W
- Efficiency = 49%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 5:1 VSWR @ 30 V, 200 W
(CW) output power
Intermodulation Distortion (dBc)
-30
-35
-40
-45
-50
-55
-60
-65
37
39
41
43
Efficiency
IM3
IM5
40
35
30
25
20
15
•
IM7
10
5
•
•
•
45
47
49
51
53
55
Output Power, PEP (dBm)
RF Characteristics
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.6 A, P
OUT
= 200 W PEP, ƒ = 1840 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
15.7
37
—
Typ
16.6
38
–31.5
Max
—
—
–30
Unit
dB
%
dBc
η
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
*See Infineon distributor for future availability.
Rev. 01, 2008-03-12
PTFA182001E
Confidential, Limited Internal Distribution
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1.8 A
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.05
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 200 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
625
3.57
–40 to +150
0.28
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA182001E
V1
Package Type
H-30260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Marking
PTFA182001E
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Rev. 01, 2008-03-12
PTFA182001E
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
Power Sweep, CW Conditions
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 1880 MHz
Broadband Performance
V
DD
= 30 V, I
DQ
= 1600 mA, P
OUT
= 50 W
40
-5
-10
-15
-20
18
17
50
Gain (dB), Efficiency (%)
Input Return Loss (dB)
35
30
25
Gain (dB)
16
15
Gain
30
20
Efficiency
20
15
10
1760
-25
Efficiency
14
13
30 32 34 36 38 40 42 44 46 48 50 52 54
10
0
Gain
1800
1840
1880
-30
-35
1920
Frequency (MHz)
Output Power (dBm)
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 30 V I
DQ
= 1600 mA , ƒ = 1840 MHz,
P
OUT
= 53 dBm PEP
0
3.6
3.4
Edge EVM and Modulation Spectrum
vs. Quiescent Current
V
DD
= 30 V, ƒ = 1836.6 MHz, P
OUT
= 50 dBm
-10
-20
-30
Intermodulation Distortion (dBc)
-10
3.2
3.0
2.8
2.6
2.4
2.2
2.0
-20
-30
3rd Order
5th
EVM
400 kHz
-40
-50
-60
-70
-40
-50
-60
0
5
10
15
20
25
30
35
40
7th
600 kHz
1.4
1.5
1.6
1.7
1.8
1.9
-80
-90
2.0
Tone Spacing (MHz)
Quiescent Current (A)
Data Sheet
3 of 10
Rev. 01, 2008-03-12
Modulation Spectrum (dBc)
EVM RMS (avg. %)
.
Drain Efficiency (%)
Return Loss
T
CASE
= 25°C
T
CASE
= 90°C
40
PTFA182001E
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
EDGE EVM Performance
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 1836.6 MHz
5
50
EDGE Modulation Spectrum Performance
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 1836.6 MHz
-40
50
4
40
Modulation Spectrum (dBc)
Efficiency
Efficiency
Drain Efficiency (%)
-50
-60
-70
-80
-90
34
36
38
40
42
44
46
48
50
52
40
EVM RMS (avg. %)
.
Drain Efficiency (%)
3
30
400 kHz
600 kHz
30
20
10
0
2
20
1
10
EVM
0
34
36
38
40
42
44
46
48
50
52
0
Output Power, avg. (dBm)
Output Power, avg. (dBm)
EDGE Modulation Spectrum Performance
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 1879.8 MHz
Output Peak-to-Average Ratio Compression
(PARC) at various Power levels
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 1880 MHz,
single-carrier WCDMA input PAR = 7.5 dB
100
Input
10
46.0 dBm
48.0 dBm
1
0.1
0.01
0.001
1
2
3
4
5
6
7
8
50.0 dBm
50.5 dBm
52.0 dBm
-40
50
Modulation Spectrum (dBc)
Efficiency
Drain Efficiency (%)
-50
-60
-70
-80
-90
34
36
38
40
42
44
46
48
50
52
40
400 kHz
600 kHz
30
20
10
0
Output Power (dBm)
Probability (%)
Peak-to-Average (dB)
Data Sheet
4 of 10
Rev. 01, 2008-03-12
PTFA182001E
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Power Sweep (CW) over Temperature
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 1880 MHz
Voltage Sweep
I
DQ
= 1600 mA, ƒ = 1840 MHz, tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
-10
50
18
17
-15°C
Power Gain (dB)
-20
Efficiency
IM3 Up
40
16
25°C
15
14
13
12
1
10
100
1000
-30
30
85°C
-40
20
Gain
-50
23
25
27
29
31
33
10
Output Power (W)
Supply Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
Normalized Bias Voltage (V)
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0
20
40
60
80
100
Case Temperature (°C)
Data Sheet
5 of 10
Rev. 01, 2008-03-12
Gain (dB), Drain Efficiency (%)
3rd Order IMD (dBc)
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