PTF240101S
Thermally-Enhanced High Power RF LDMOS FET
10 W, 2400 – 2700 MHz
Description
The PTF240101S is a 10-watt, internally-matched
GOLDMOS
®
FET device
intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz
band. Full gold metallization ensures excellent device lifetime and reliability.
PTF240101S
Package H-32259-2
Three-Carrier CDMA2000 Performance
V
DD
= 28 V, I
DQ
= 180 mA, ƒ = 2680 MHz
40
35
-30
-35
Features
•
•
Pb-free and RoHS-compliant
Typical CDMA2000 performance
- Average output power = 2.0 W
- Gain = 16 dB
- Efficiency = 18%
- ACPR = –55 dBc
Typical CW performance
- Output power at P–1dB = 15 W
- Efficiency = 45%
Integrated ESD protection: Human Body
Model Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
30
25
Efficiency
ACP Up
-40
-45
-50
-55
Adj. Ch. Power Ratio (dBc)
Drain Efficiency (%)
•
20
15
10
5
0
28
30
32
34
36
38
40
42
•
•
•
•
ALT Up
ACP Low
-60
-65
-70
Output Power (dBm), PEP
RF Characteristics, CDMA2000 Operation
CDMA2000 Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 180 mA, P
OUT
= 2 W, ƒ = 2680 MHz
Characteristic
Adjacent Channel Power Ratio
Gain
Symbol
ACPR
G
ps
Min
—
—
Typ
–55
16
Max
—
—
Unit
dBc
dB
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 180 mA, P
OUT
= 10 W PEP, ƒ = 2680 MHz, tone spacing = 1 MHz
Characteristic
Gain
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
IMD
Min
15.5
—
Typ
16
–31
Max
—
–28
Unit
dB
dBc
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 12
Rev. 05, 2007-04-12
PTF240101S
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture) (cont.)
V
DD
= 28 V, I
DQ
= 160 mA, ƒ = 2680 MHz, tone spacing = 7 MHz
Characteristic
Gain
Efficiency at 1 W avg.
Intermodulation Distortion at 1 W avg.
Compression at 10 W avg.
Input Return Loss at 2.4 GHz
Symbol
G
ps
Min
14
9
—
—
–10
Typ
15
10
–42
0.3
–12
Max
—
—
–40
1.0
—
Unit
dB
%
dBc
dB
dB
η
D
IMD
P
comp
IRL
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 A
V
DS
= 28 V, I
DQ
= 180 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.83
3.2
—
Max
—
1.0
—
4.0
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 10 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
58
0.333
–40 to +150
3.0
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTF240101S
Package Outline
H-32259-2
Package Description
Thermally-enhanced, surface mount
Marking
PTF240101S
Data Sheet
2 of 12
Rev. 05, 2007-04-12
PTF240101S
Typical Performance, CDMA2000 Operation
(measurements taken in broadband test fixture)
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 180 mA, ƒ = 2680 MHz
18
17
16
70
40
Broadband Performance
V
DD
= 28 V, I
DQ
= 180 mA, P
OUT
= 10 W
5
0
Gain (dB), Efficiency (%)
Gain
60
Drain Efficiency (%)
35
30
25
20
15
50
40
30
Efficiency
Return Loss
Gain (dB)
-5
-10
-15
15
14
Efficiency
13
12
11
28
33
38
43
20
10
0
Gain
2620
2640
2660
2680
-20
-25
2700
10
2600
Output Power (dBm)
Frequency (MHz)
Gain vs. Output Power
V
DD
= 28 V, ƒ = 2680 MHz
18.0
17.5
IS-95 CDMA Performance
V
DD
= 28 V, I
DQ
= 180 mA, ƒ = 2680 MHz
70
60
-30
Adj
-35
-40
-45
-50
Power Gain (dB)
17.0
16.5
16.0
15.5
15.0
14.5
26
I
DQ
= 220 mA
50
40
30
20
I
DQ
= 180 mA
I
DQ
= 100 mA
-55
Efficiency
10
0
-60
-65
-70
Alt–1
29
32
35
38
41
44
29
31
33
35
37
39
41
Output Power (dBm)
Output Power (dBm), Avg.
Data Sheet
3 of 12
Rev. 05, 2007-04-12
Adj. Ch. Power Ratio (dBc)
Drain Efficiency (%)
Return Loss (dB)
PTF240101S
Typical Performance
(cont.)
Intermodulation Distortion vs. Output Power
V
DD
= 28 V, I
DQ
= 180 mA, ƒ
1
= 2679 MHz, ƒ
2
= 2680 MHz
-20
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
1.04
0.05
0.28
0.51
0.74
0.97
1.2
Normalized Bias Voltage
-30
-40
-50
-60
-70
-80
33
35
37
39
41
43
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
0
20
40
60
80
3rd Order
5th Order
IMD (dBc)
7th Order
100
Output Power, PEP (dBm)
Case Temperature (ºC)
Broadband Circuit Impedance Data
-
W
AV
E
LE
NGT
Z
0
= 50
Ω
D
0
.0
0.1
ARD
LOA
D
-
HS
T
OW
E
NGT
VE
L
Z Load
2700 MHz
G
S
2400 MHz
0. 1
Z Source
2700 MHz
Frequency
MHz
2400
2450
2500
2550
2600
2650
2700
Z Source
Ω
R
3.8
3.4
3.1
3.3
2.6
2.9
2.5
jX
–13.5
–12.7
–10.5
–10.0
–8.3
–7.4
–6.0
Z Load
Ω
R
4.7
4.3
4.0
3.6
3.4
3.2
3.1
jX
–3.6
–3.3
–2.8
–2.4
–1.9
–1.4
–1.0
WA
<---
0.
2
2400 MHz
0. 3
Data Sheet
4 of 12
Rev. 05, 2007-04-12
0.2
Z Source
Z Load
PTF240101S
CDMA2000 Reference Circuit
C1
0.001µF
R2
1.3KV
R1
1.2KV
QQ1
LM7805
V
DD
Q1
BCP56
C2
0.001µF
R3
2K
V
C3
0.001µF
R4
2K
V
R5
10V
R6
5.1K
C5
0.1µF
R7
5.1K
V
C6
10pF
R8
10V
l10
C7
4.7pF
l7
C10
4.7pF
DUT
l4
l5
C11
0.6pF
l
6
l
8
l
9
l11
C12
4.7pF
C13
100µF
50V
C4
10 µF
35V
V
D D
C14
0.5pF
l12
C15
0.4pF
C16
4.7pF
l13
RF_OUT
RF_IN
l1
l
2
C8
1.4pF
l
3
C9
0.5pF
240101s_sch
Reference Circuit Schematic for ƒ = 2650 MHz
Circuit Assembly Information
DUT
PTF240101S
Circuit Board
0.76 mm [0.030"] thick,
ε
r
= 4.5
Microstrip
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
l11
l12
l13
Data Sheet
Electrical Characteristics at 2650 MHz
0.043
λ,
50.0
Ω
0.119
λ,
50.0
Ω
0.173
λ,
50.0
Ω
0.114
λ,
50.0
Ω
0.030
λ,
50.0
Ω
0.019
λ,
13.3
Ω
0.278
λ,
75.0
Ω
0.038
λ,
13.3
Ω
0.027
λ,
13.3
Ω
0.327
λ,
75.0
Ω
0.086
λ,
13.3
Ω
0.177
λ,
50.0
Ω
0.217
λ,
50.0
Ω
LDMOS Transistor
Rogers TMM4, 2 oz. Copper
Dimensions: L x W (mm)
2.67 x 1.35
7.37 x 1.35
10.67 x 1.35
7.06 x 1.35
1.83 x 1.35
1.09 x 8.81
17.60 x 0.69
2.18 x 8.81
1.52 x 8.81
20.73 x 0.69
4.83 x 8.81
10.92 x 1.35
13.41 x 1.35
Dimensions: L x W (in.)
0.105 x 0.053
0.290 x 0.053
0.420 x 0.053
0.278 x 0.053
0.072 x 0.053
0.043 x 0.347
0.693 x 0.027
0.086 x 0.347
0.060 x 0.347
0.816 x 0.027
0.190 x 0.347
0.430 x 0.053
0.528 x 0.053
Rev. 05, 2007-04-12
5 of 12
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
