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PTFA091503EL

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FET

150 W, 920 – 960 MHz

Description

The PTFA091503EL is a 150-watt, internally-matched FET intended

for use in power amplifier applications in the 920 to 960 MHz band.

This device features internal I/O matching and thermally-enhanced

open cavity ceramic package. Manufactured with Infineon's advanced

LDMOS process, this device provides excellent thermal performance

and superior reliability.

PTFA091503EL

Package H-33288-6

Features

V

DD

= 30 V, I

DQ

= 1250 mA, ƒ = 960 MHz, 3GPP

WCDMA signal, PAR = 8 dB, 10 MHz carrier

spacing, 3.84MHz Bandwidth

60

50

-30

Two-carrier WCDMA Performance

•

Broadband internal matching

Typical two-carrier WCDMA performance at

960 MHz, 30 V

- Average output power = 32 W

- Linear Gain = 17 dB

- Efficiency = 29%

- Intermodulation distortion = –37 dBc

- Adjacent channel power = –39 dBc

Typical CW performance, 960 MHz, 30 V

- Output power at P

1dB

= 150 W

- Linear Gain = 17 dB

- Efficiency = 54%

Integrated ESD protection: Human Body Model,

Class 2 (minimum)

Excellent thermal stability, low HCI drift

Capable of handling 10:1 VSWR @ 30 V,

150 W (CW) output power

Pb-free, RoHS-compliant

ACPR

Drain Efficiency (%)

40

30

20

10

0

30

IMD

Efficiency

Gain

-40

-45

-50

-55

-60

IMD (dBc) , ACPR (dBc)

-35

•

35

40

45

50

Output Power (dBm)

RF Characteristics

fixture)

V

DD

= 30 V, I

DQ

= 1250 mA, P

OUT

= 32 W average

ƒ

1

= 950 MHz, ƒ

2

= 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF

Two-carrier WCDMA Measurements

(not subject to production test—verified by design/characterization in Infineon test

Characteristic

Gain

Drain Efficiency

Intermodulation Distortion

Symbol

G

ps

Min

—

Typ

17

29

–37

Max

—

Unit

dB

%

dBc

h

D

IMD

All published data at T

CASE

= 25°C unless otherwise indicated

ESD:

Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

1 of 11

Rev. 03, 2010-08-11

PTFA091503EL

Confidential, Limited Internal Distribution

RF Characteristics

(cont.)

Two-tone Measurements

(tested in Infineon test fixture)

V

DD

= 30 V, I

DQ

= 1250 mA, P

OUT

= 140 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz

Characteristic

Gain

Drain Efficiency

Intermodulation Distortion

Symbol

Gps

Min

16

40

—

Typ

17

42

–30

Max

—

–28

Unit

dB

%

dBc

h

D

IMD

DC Characteristics

Characteristic

Drain-Source Breakdown Voltage

Drain Leakage Current

Conditions

V

GS

= 0 V, I

DS

= 10 mA

V

DS

= 28 V, V

GS

= 0 V

V

DS

= 63 V, V

GS

= 0 V

Symbol

V

(BR)DSS

I

DSS

I

DSS

R

DS(on)

V

GS

I

GSS

Min

65

—

2.0

—

Typ

—

0.07

2.5

—

Max

—

1.0

10.0

—

3.0

1.0

Unit

V

µA

W

V

µA

On-State Resistance

Operating Gate Voltage

Gate Leakage Current

V

GS

= 10 V, V

DS

= 0.1 V

V

DS

= 30 V, I

DQ

= 1250 mA

V

GS

= 10 V, V

DS

= 0 V

Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Junction Temperature

Storage Temperature Range

Thermal Resistance (T

CASE

= 70 °C, 150 W CW)

Symbol

V

DSS

V

GS

T

J

T

STG

R

qJC

Value

65

–0.5 to +12

200

–40 to +150

0.42

Unit

V

°C

°C/W

Ordering Information

Type and Version

PTFA091503EL V4

PTFA091503EL V4 R250

Package Outline

H-33288-6

Package Description

Thermally-enhanced slotted flange, single-ended

Shipping

Tray

Tape & Reel, 250 pcs

Data Sheet

2 of 11

Rev. 03, 2010-08-11

PTFA091503EL

Confidential, Limited Internal Distribution

Typical Performance

V

DD

= 30 V, I

DQ

= 1.25A, P

O UT

= 70 W

Broadband Performance

CW Performance

Gain & Efficiency vs. Output Power

V

DD

= 30 V, I

DQ

= 1.25 A, ƒ = 960 MHz

50

45

0

20

19

70

Efficiency

-5

Efficiency (%), Gain (dB)

Return Loss (dB)

-10

18

30

25

20

15

10

910

920

Return Loss

-15

-20

Gain (dB)

35

17

16

15

14

13

35

40

Gain

50

40

30

20

Gain

-25

-30

-35

Efficiency

10

0

930

940

950

960

970

45

50

55

Frequency (MHz)

Output Power (dBm)

Intermodulation Distortion vs.

Output Power

V

DD

= 30 V, I

DQ

= 1.25 A,

ƒ

1

= 960 MHz, ƒ

2

= 959 MHz

V

DD

= 30 V, ƒ = 960 MHz

Power Sweep, CW

-20

-30

19

Power Gain (dB)

IMD (dBc)

-40

-50

-60

-70

-80

35

3rd Order

5th

18

I

DQ

= 1.625 A

I

DQ

= 1.25 A

17

16

7th

15

40

45

50

55

35

I

DQ

= 0.875 A

40

45

50

55

Output Power, PEP (dBm)

Output Power (dBm)

Data Sheet

3 of 11

Rev. 03, 2010-08-11

Drain Efficiency (%)

40

T

CA S E

= 25°C

T

CA S E

= 90°C

60

PTFA091503EL

Confidential, Limited Internal Distribution

Typical Performance

(cont.)

V

DD

= 30 V, I

DQ

= 1.25A, ƒ = 960 MHz

IS-95 CDMA Performance

50

-30

-40

Adj 750 kHz

Alt

1

1.98 MHz

-50

-60

-70

-80

30

35

40

45

50

Drain Efficiency (%)

40

30

20

10

0

Adj. Ch. Power Ratio (dBc)

Efficiency

Nornalized to 50 Ohms

0.

0

0.

Broadband Circuit Impedance

D

RD

G

E

NE

RA

T

O

0. 2

Z Source

Z Load

-

W

AV

E

LE

NGTH

S T

OW

A

S

D

L

OA

D

-

S

T

OW

AR

NGT

H

VEL

E

Frequency

MHz

910

920

930

940

950

960

970

R

Z Source

W

jX

–1.2

–0.9

–0.8

–0.6

–0.4

–0.3

–0.2

R

1.08

1.12

1.15

1.16

1.21

1.28

1.33

Z Load

W

jX

–1.0

–0.7

–0.6

–0.4

–0.3

–0.1

0.1

2.88

2.87

2.88

2.9

0

.0

0.1

0.2

0.3

Z Source

Z Load

910 MHz

0.1

W

<---

A

0.

2

0. 3

Data Sheet

4 of 11

45

0.

05

Rev. 03, 2010-08-11

4

0.

5

0.4

0 .1

G

R

--

->

970 MHz

0.

3

45

0.

5

4

Output Power (dBm), Avg.

a091503efl-v4/1

Z

0

= 50

W

0.

ga091503eflV4x1 Apr. 21, 2009 3:59:01 PM

5

0. 6

PTFA091503EL

Confidential, Limited Internal Distribution

Reference Circuit

C804

100000 pF

R804

1200 Ohm

R803

10 Ohm

8

4

S2

In

NC

2

3

Out

NC

6

7

1

S3

3

5

C801

100000 pF

R801

1300 Ohm

R805

1000 Ohm

S1

1

C805

100000 pF

2

V

DD

C

S

4

B

C803

100000 pF

3

E

C802

100000 pF

R802

1200 Ohm

C101

33 pF

TL116

TL104

TL124

1

3

2

C106

10000 pF

TL122

1

C105

4710000 pF

TL121

2

1

R102

5100 Ohm

3

2

3

TL120

1

R101

10 Ohm

3

2

C108

4.7 pF

TL118

1

3

2

C107

10000 pF

TL119

1

3

2

TL107

TL117

TL103

TL135

TL113

TL101

TL114

TL133

R103

10 Ohm

TL128

TL115

H=20 mil

RO/RO4350B1

e

r=3.48

TL106

RF_IN

TL109

TL112

TL108

C102

33 pF

TL131

TL134

TL127

TL125

1

3

2

TL136

TL137

2

3

1

TL129

TL123

2

3

1

TL105

TL126

aa a a a a a aaa a aa aa a aa aaa a a a

GATE_DUT

Pin A

TL132

TL110

TL102

TL130

TL111

C104

7.5 pF

C103

5.1 pF

Reference circuit input schematic for ƒ = 960 MHz

C201

10000000 pF

TL202

3

2

C211

10000000 pF

TL226

3

2

1

3

2

C203

1000000 pF

TL201

2

3

1

C205

10000000 pF

TL203

1

2

4

C204

10000000 pF

TL204

3

1

TL225

TL214

TL232

DUT

Pin D

1

TL227

1

TL233

3

2

C207

10000000 pF

V

DD

C216

20000 pF

C208

1.5 pF

TL212

TL207

TL223

C206

33 pF

TL209

TL217

TL221

TL205

TL208

TL222

TL210

DRAIN DUT

Pin C

TL218

TL215

TL206

TL220

1

2

3

TL228

4

TL216

RF_OUT

TL211

DUT

Pin D

C209

1.5 pF

TL219

TL234

C202

20000 pF

2

3

1

TL229

TL237

1

3

2

TL235

1

3

2

TL224

2

3

1

2

3

TL231

1

3

2

4

TL213

C215

10000000 pF

a a a a a a a aaa a a a a a aaa a aa a a a

H=20 mil

RO/RO4350B1

e

r=3.48

TL236

C210

10000000 pF

C217

10000000 pF

C214

1000000 pF

C213

10000000 pF

C212

10000000 pF

V

DD

Reference circuit output schematic for ƒ = 960 MHz

Data Sheet

5 of 11

Rev. 03, 2010-08-11

PTFA091503EL

PTFA091503EL概述

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