PTFA081501E
PTFA081501F
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 864 – 900 MHz
Description
The PTFA081501E and PTFA081501F are thermally-enhanced,
150-watt, internally matched
GOLDMOS
®
FETs intended for ultra-
linear applications. They are characaterized for CDMA and
CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced
packages provide the coolest operation available. Full gold
metallization ensures excellent device lifetime and reliability.
PTFA081501E
Package H-30248-2
PTFA081501F
Package H-31248-2
IS-95 CDMA Performance
V
DD
= 28 V, I
DQ
= 950 mA, ƒ = 900 MHz
T
CASE
= 25°C
T
CASE
= 90°C
Features
•
•
•
Adjacent Channel Power
Ratio (dBc)
Thermally-enhanced packages, Pb-free and
RoHS-compliant
Broadband internal matching
Typical CDMA2000 performance at 900 MHz, 28 V
- Average output power = 35 W
- Linear Gain = 18 dB
- Efficiency = 34%
- Adjacent channel power = –50 dBc
Typical CW performance, 900 MHz, 28 V
- Output power at P–1dB = 165 W
- Efficiency = 62%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
170 W (CW) output power
50
40
-30
-40
Drain Efficiency (%)
Adj 750 kHz
30
20
-50
-60
•
Efficiency
10
0
32
34
36
38
40
42
44
46
48
Alt1 1.98 MHz
-70
-80
•
•
•
Output Power (dBm), Avg.
RF Characteristics
CDMA2000 3-Carrier Measurements
(not subject to production test—verified by design/characterization in Infineon test
fixture)
V
DD
= 28 V, I
DQ
= 950 mA, P
OUT
= 35 W average, ƒ = 900 MHz
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
—
—
—
Typ
18
34
–50
Max
—
—
—
Unit
dB
%
dBc
η
D
ACPR
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03, 2007-03-09
PTFA081501E
PTFA081501F
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 950 mA, P
OUT
= 150 W PEP, ƒ = 900 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
17
44
—
Typ
18
46
–30
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.07
2.48
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 950 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 150 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
449
2.56
–40 to +150
0.39
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTFA081501E
PTFA081501F
Package Outline
H-30248-2
H-31248-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA081501E
PTFA081501F
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Rev. 03, 2007-03-09
PTFA081501E
PTFA081501F
Typical Performance
(data taken in a production test fixture)
Linear Broadband Performance
V
DD
= 28 V, I
DQ
= 950 mA, P
OUT
Avg. = 48.75 dBm
Broadband CW Performance
V
DD
= 28 V, I
DQ
= 950 mA, P
OUT
= P–1dB
45
20
Gain (dB), Return Loss (dB)
Efficiency
Gain
19
Efficiency
65
Efficiency (%)
Gain (dB)
40
35
30
25
20
864
10
0
18
60
Gain
17
55
Return Loss
-10
-20
Output Power
16
864
870
876
882
888
894
50
900
873
882
891
-30
900
Frequency (MHz)
Frequency (MHz)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V
DD
= 28 V, I
DQ
= 950 mA, ƒ
1
= 899 MHz, ƒ
2
= 900 MHz
-20
-30
-40
-50
IM3 vs. Output Power at Selected Biases
V
DD
= 28 V, ƒ
1
= 899 MHz, ƒ
2
= 900 MHz
-25
-30
I
DQ
= 675 mA
3rd Order
-35
IMD (dBc)
IMD (dBc)
-40
-45
-50
-55
-60
I
DQ
= 950 mA
5th
-60
7th
-70
-80
35
38
41
44
47
50
I
DQ
= 1125 mA
36
38
40
42
44
46
48
50
Output Power, Avg. (dBm)
Output Power, Avg. (dBm)
Data Sheet
3 of 10
Rev. 03, 2007-03-09
Efficiency (%), Output Power (dBm)
50
30
20
70
PTFA081501E
PTFA081501F
Typical Performance
(cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.56 A
3.10 A
4.66 A
6.22 A
7.76 A
1.00
0.99
0.98
0.97
0.96
-20
9.32 A
10.88 A
12.44 A
14.00 A
Normalized Bias Voltage (V)
1.02
1.01
0
20
40
60
80
100
Case Temperature (°C)
Broadband Circuit Impedance
Frequency
D
Z Source
Ω
R
13.20
13.30
13.85
14.59
15.01
jX
4.69
4.75
4.94
5.00
4.91
Z Load
Ω
R
1.35
1.28
1.14
1.06
1.01
jX
4.73
4.80
4.99
5.27
5.43
Z
0
= 50
Ω
Z Source
Z Load
MHz
864
873
882
891
900
G
S
D
GE
Z Load
900 MHz
HS
T
O
W
AR
-
W
A VEL
EN
G T
0
.0
0 .1
0 .2
0 .3
0 .4
Data Sheet
AD
-
5 of 10
Rev. 03, 2007-03-09
0 .5
0. 1
864 MHz
Z Source
900 MHz
864 MHz
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
