PTFA091203EL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
120 W, 920 – 960 MHz
Description
The PTFA091203EL is a 120-watt, internally-matched FET intended
for use in power amplifier applications in the 920 to 960 MHz band.
This device features internal I/O matching and thermally-enhanced
open cavity ceramic package. Manufactured with Infineon's ad-
vanced LDMOS process, this device provides excellent thermal
performance and superior reliability..
PTFA091203EL
Package H-33288-6
Features
Two-carrier WCDMA Performance
3GPP signal, 10 MHz carrier spacing,
BW = 3.84 MHz, PAR = 8 dB
V
DD
= 30 V , I
DQ
= 1.05 A
•
•
Broadband internal matching
Typical two-carrier WCDMA performance,
960 MHz, 30 V
- Average output power = 28 W
- Gain = 17 dB
- Efficiency = 27%
- Intermodulation Distortion = –36 dBc
Typical CW performance, 960 MHz, 30 V
- Output power at P
1dB
= 140 W
- Gain = 17 dB
- Efficiency = 54%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 30 V,
120 W (CW) output power
Pb-free and RoHS-compliant
-15
Intermodulation Distortion (dBc)
-20
-25
-30
-35
-40
-45
-50
-55
32
Drain Efficiency (%)
960 MHz
940 MHz
920 MHz
IMD Up
40
Efficiency
35
30
25
20
15
IMD Low
10
5
0
•
•
•
•
•
34
36
38
40
42
44
46
48
Output Power (dBm)
RF Characteristics
fixture)
V
DD
= 30 V, I
DQ
= 1050 mA, P
OUT
= 28 W Avg
ƒ
1
= 950 MHz, ƒ
2
= 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.0 dB @ 0.01% CCDF
Two-carrier WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
Gps
Min
—
—
—
Typ
17
27
–36
Max
—
—
—
Unit
dB
%
dBc
h
D
IMD
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 05, 2010-11-12
PTFA091203EL
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1050 mA, P
OUT
= 110 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
17
38
—
Typ
18
40
–30
Max
—
—
–28
Unit
dB
%
dBc
h
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1050 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.07
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 120 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
Value
65
–0.5 to +12
200
–40 to +150
0.42
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFA091203EL V4
PTFA091203EL V4 R250
Package Type
H-33288-6
H-33288-6
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced slotted flange, single-ended
Shipping
Tray
Tape & Reel, 250 pcs
Data Sheet
2 of 10
Rev. 05, 2010-11-12
PTFA091203EL
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
V
DD
= 30V, I
DQ
= 1.05 A
Two-tone Drive Up
V
DD
= 30V, I
DQ
= 1.05 A
CW Conditions
Intermodulation Distortion (dBc)
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
33
35
37
39
41
43
45
47
49
Average Output Power (dBm)
IMD3
960 MHz
940 MHz
920 MHz
Efficiency
45
40
35
25
20
60
960 MHz
940 MHz
920 MHz
Efficiency
50
40
30
0.
0
Drain Efficiency (%)
Gain (dB)
30
ga091203ef Sept. 2, 2010 12:02:32 PM
18
Drain Efficiency (%)
19
16
Nornalized to 50 Ohms
5
0
15
36
38
0.
45
10
40
42
44
46
48
50
52
Output Power (dBm)
R
--
->
Broadband Circuit Impedance
D
RD
G
E
NE
RA
T
O
G
S
0.0
0.1
0.2
970 MHz
ARD
LOA
D
-
HS
T
OW
Z Source
Z Load
910 MHz
970 MHz
910 MHz
Frequency
MHz
910
920
930
940
950
960
970
R
Z Source
W
jX
–2.36
–2.21
–2.07
–1.92
–1.78
–1.64
–1.50
R
1.42
1.40
1.38
1.35
1.33
1.32
1.30
Z Load
W
jX
–3.11
–2.97
–2.83
–2.68
–2.54
–2.40
–2.26
2.43
2.41
2.39
2.37
2.36
2.34
2.33
W
<---
A
NGT
VE
LE
0. 1
0.
2
0. 3
Data Sheet
3 of 10
45
0.
0.
05
Rev. 05, 2010-11-12
.4
0
0.
5
0.3
0 .1
Z Source
Z Load
-
W
AV
E
LE
NGT
H
S T
OW
A
Z
0
= 50
W
0.
5
4
ptfa091203ef
20
15
17
Gain
20
10
0.
5
0.
3
0. 2
PTFA091203EL
Confidential, Limited Internal Distribution
Reference Circuit
H=30 mil
RO/RO4350B1
R802
10 Ohm
e
r=3.48
C802
100000 pF
8
S3
In
NC
2
3
Out
NC
6
1
R804
10 Ohm
S1
3
C804
10000
4
7
5
C805
10000 pF
R805
1200 Ohm
C803
10000
S2
2
C
4
R803
1000 Ohm
1
C801
100000 pF
B
S
3
R801
1300 Ohm
E
C103
33 pF
C104
10000 pF
C105
4710000 pF
R102
5100 Ohm
TL127
2
1
C101
4.7 pF
R101
10 Ohm
3
2
1
C102
10000 pF
TL101
TL113
TL131
1
3
2
TL129
1
3
2
TL128
1
TL125
3
2
TL126
3
1
2
TL116
3
TL112
TL102
TL107
R103
10 Ohm
TL136
TL124
TL109
TL122
TL110
TL123
TL115
RF_IN
TL118
TL121
TL117
C108
33 pF
TL105
TL133
2
3
1
TL108
TL135
TL132
1
TL103
3
2
TL130
2
3
1
TL114
TL134
a 0 9 1 2 0 3 e l _ b d i n _ 0 9 - 0 7 - 2 0 1 0
GATE DUT
(Pin A)
TL106
TL119
TL111
TL104
TL120
C107
6.2 pF
C106
5.1 pF
Reference circuit input schematic for ƒ = 960 MHz
C204
10000000 pF
C205
10000000 pF
C201
1000000 pF
C203
10000000 pF
C202
10000000 pF
V
DD
TL222
1
3
3
2
2
1
TL227
1
2
3
TL223
3
2
1
4
TL225
TL224
TL226
DUT
(Pin D)
C211
20000 pF
C214
1.5 pF
TL204
TL207
TL219
TL209
1
TL212
TL220
TL213
DRAIN DUT
(Pin C)
2
3
TL218
TL205
C212
33 pF
TL201
TL206
TL210
TL221
TL202
TL211
RF_OUT
4
TL203
C213
1.5 pF
TL208
TL216
3
1
2
3
4
1
DUT
(Pin D)
C215
20000 pF
TL228
1
e
r=3.48
H=30 mil
RO/RO4350B1
2
3
2
TL215
2
3
1
TL214
C206
10000000 pF
a 0 9 1 2 0 3 e l _ b d o u t _ 0 9 - 0 7 - 2 0 1 0
TL217
C210
10000000 pF
C209
10000000 pF
C208
1000000 pF
C207
10000000 pF
V
DD
Reference circuit output schematic for ƒ = 960 MHz
Data Sheet
4 of 10
Rev. 05, 2010-11-12
PTFA091203EL
Confidential, Limited Internal Distribution
Reference Circuit
(cont.)
Description
DUT
PCB
PTFA091203EL
0.760 mm [.030"] thick,
er
= 3.48, Rogers 4350, 1 oz. copper
Electrical Characteristics at 960 MHz
Transmission
Line
Input
TL101, TL102, TL122,
TL123, TL124
TL103
TL104, TL106
TL105
TL107
TL108
TL109
TL110
TL111
TL112
TL113
TL114
TL115
TL116
TL117
TL118, TL119, TL120,
TL121
TL125, TL126, TL127,
TL128
TL129, TL131
TL130
TL132
TL133
TL134
TL135
TL136
0.003
λ,
78.27
W
0.011
λ,
36.29
W
0.012
λ,
36.29
W
0.015
λ,
8.94
W
0.004
λ,
8.94
W
0.000
λ,
38.82
W
0.059
λ,
8.94
W
0.040
λ,
51.58
W
0.086
λ,
38.82
W
0.007
λ,
78.27
W
0.002
λ,
38.82
W
0.015
λ,
78.27
W
0.098
λ,
78.27
W
0.004
λ,
51.58
W
0.026
λ,
78.27
W
0.014
λ,
36.29
W
0.039
λ,
8.94
W
0.033
λ,
51.58
W
0.001
λ,
36.29
W
0.007
λ,
51.58
W
W = 0.762
W = 15.240, L = 10.287
W = 1.651, L = 7.620
W = 2.540, L = 15.900
W = 0.762, L = 1.270
W = 2.540, L = 0.330
W = 0.762, L = 2.921
W = 0.762, L = 19.050
W = 1.651, L = 0.762
W = 0.762, L = 5.080
W = 2.794, L = 2.642
W = 15.240, L = 6.731
W = 1.651, L = 6.302
W = 2.794, L = 0.254
W = 1.651, L = 1.270
W = 1.651
W1 = 2.794, W2 = 2.794, W3 = 2.032
W1 = 2.794, W2 = 2.794, W3 = 2.286
W1 = 15.240, W2 = 15.240, W3 = 2.540
W1 = 15.240, W2 = 15.240, W3 = 0.762
W1 = 2.540, W2 = 2.540, W3 = 0.025
W1 = 17.780, W2 = 12.700
W1 = 2.540, W2 = 15.240
W = 0.762, L = 0.508
W = 30
W = 600, L = 405
W = 65, L = 300
W = 100, L = 626
W = 30, L = 50
W = 100, L = 13
W = 30, L = 115
W = 30, L = 750
W = 65, L = 30
W = 30, L = 200
W = 110, L = 104
W = 600, L = 265
W = 65, L = 248
W = 110, L = 10
W = 65, L = 50
W = 65
W1 = 110, W2 = 110, W3 = 80
W1 = 110, W2 = 110, W3 = 90
W1 = 600, W2 = 600, W3 = 100
W1 = 600, W2 = 600, W3 = 30
W1 = 100, W2 = 100, W3 = 1
W1 = 700, W2 = 500
W1 = 100, W2 = 600
W = 30, L = 20
Electrical
Characteristics
Dimensions: mm
Dimensions: mils
table continued on page 6
Data Sheet
5 of 10
Rev. 05, 2010-11-12
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
