PTFA041501GL
PTFA041501HL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 420 – 500 MHz
Description
The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs
designed for ultra-linear CDMA power amplifier applications. They
are available in thermally-enhanced plastic open-cavity packages
with copper flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA041501GL
Package PG-63248-2
PTFA041501HL
Package PG-64248-2
Single-carrier CDMA IS-95 Performance
V
DD
= 28 V, I
DQ
= 900 mA, ƒ = 470 MHz
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
36
38
40
42
44
46
48
45
Features
•
Thermally-enhanced plastic open-cavity (EPOC™)
packages with copper flanges, Pb-free and RoHS-
compliant
Broadband internal matching
Typical CDMA performance at 470 MHz, 28 V
- Average output power = 60 W
- Linear Gain = 21 dB
- Efficiency = 41%
Typical CW performance, 470 MHz, 28 V
- Output power at P–1dB = 175 W
- Efficiency = 62%
Integrated ESD protection: Human Body Model,
Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
Adjacent Channel Power Ratio (dB)
30
25
20
15
Drain Efficiency (%)
–15°C
25°C
90°C
Efficiency
40
35
•
•
•
ACPR
ALT
10
5
0
•
•
•
•
Average Output Power (dBm)
RF Characteristics
Single-carrier CDMA IS-95 Measurements
(not subject to production test—verified by design/characterization in
Infineon test fixture)
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 60 W average, ƒ = 470 MHz
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
—
—
—
Typ
21
41
–33
Max
—
—
—
Unit
dB
%
dB
η
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
*See Infineon distributor for future availability.
Rev. 03, 2009-04-21
PTFA041501GL
PTFA041501HL
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 150 W PEP, ƒ = 470 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
20.0
45.0
—
Typ
21.0
46.5
–29
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 900 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2
—
Typ
—
—
0.07
2.48
—
Max
—
1.0
—
3
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 150 W CW, soldered)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
625
3.57
–40 to +150
0.28
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
T
ype and Version
PTFA041501GL V1
PTFA041501HL V1
Package Type
PG-63248-2
PG-64248-2
Package Description
Thermally-enhanced slotted flange,
single-ended
Thermally-enhanced slotted flange,
single-ended
Shipping
Tray
Tray
Marking
PTFA041501GL
PTFA041501HL
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 03, 2009-04-21
PTFA041501GL
PTFA041501HL
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production )
Broadband Circuit Performance
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 80 W
50
45
-13
P
OUT
, Gain & Efficiency (at P-1dB) vs. Frequency
V
DD
= 28 V, I
DQ
= 900 mA
65
20.9
Efficiency (%), Output Power (dBm)
Gain (dB), Efficiency (%)
40
35
30
25
20
15
460
-15
Input Return Loss (dB)
Efficiency
Return Loss
-14
60
55
50
45
40
35
30
25
20
15
460
Efficiency
Output Power
20.8
20.7
20.6
-16
-17
20.4
20.3
Gain
-18
-19
-20
470
Gain
20.2
20.1
20
462
464
466
468
462
464
466
468
19.9
470
Frequency (MHz)
Frequency (MHz)
Power Sweep at selected I
DQ
V
DD
= 28 V, ƒ = 470 MHz
Power Sweep, CW Conditions
V
DD
= 28 V, I
DQ
= 900 mA, ƒ = 470 MHz
22.0
21.5
21.0
20.5
22
21
80
70
60
Gain (dB)
Gain (dB)
20.0
19.5
19.0
18.5
18.0
17.5
17.0
39
41
43
I
DQ
= 1125 mA
I
DQ
= 900 mA
I
DQ
= 675 mA
20
19
18
17
16
15
Gain
50
40
30
Efficiency
T
CASE
= 25°C
T
CASE
= 90°C
39
41
43
45
47
49
51
53
55
20
10
45
47
49
51
53
55
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 11
Rev. 03, 2009-04-21
Drain Efficiency (%)
Gain (dB)
20.5
PTFA041501GL
PTFA041501HL
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Intermodulation Distortion vs. Output Power
V
DD
= 28 V, I
DQ
= 900 mA,
ƒ
1
= 469 MHz, ƒ
2
= 470 MHz
0
50
IM3 vs. Output Power at Selected Biases
V
DD
= 28 V , ƒ
1
= 469 MHz, ƒ
2
= 470 MHz
-25
-27
Intermodulation Distortion (dBc)
-10
-20
-30
-40
-50
-60
-70
36
38
40
42
Efficiency
IM3
45
40
35
30
Drain Efficiency (%)
-29
IMD (dBc)
-31
-33
-35
-37
-39
-41
-43
36
38
675 mA
900 mA
1125 mA
IM5
IM7
44
46
48
50
25
20
15
10
40
42
44
46
48
50
Output Power (dBm), avg.
Output Power (dBm)
Output Power (at 1 dB compression)
vs. Supply Voltage
I
DQ
= 900 mA, ƒ = 470 MHz
55
1.03
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.29 A
0.88 A
1.47 A
2.20 A
4.41 A
6.61 A
8.81 A
11.02 A
Normalized Bias Voltage (V)
24
26
28
30
32
Output Power (dBm)
54
53
52
51
50
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0
20
40
60
80
100
Supply Voltage (V)
Case Temperature (°C)
Data Sheet
4 of 11
Rev. 03, 2009-04-21
PTFA041501GL
PTFA041501HL
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
RD
G
Z Source
Z Load
-
W
AV
E
LE
NGTH
G
S
0.0
0.1
ARD
L
OA
D
-
HS
T
OW
ENGT
V
EL
470 MHz
450 MHz
Frequency
MHz
450
455
460
465
470
R
Z Source
Ω
jX
–3.20
–3.20
–3.10
–3.00
–2.90
0.88
0.84
0.84
0.84
0.83
Z Load
Ω
R
1.33
1.35
1.40
1.41
1.44
jX
0.22
0.31
0.38
0.47
0.57
Z Source
470 MHz
450 MHz
0. 1
See next page for circuit information
Data Sheet
5 of 11
WA
<---
Rev. 03, 2009-04-21
0.2
0. 1
D
S T
OW
A
Z
0
= 50
Ω
Z Load
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
