PTF081301E
PTF081301F
Thermally-Enhanced High Power RF LDMOS FETs
130 W, 869 – 960 MHz
Description
The PTF081301E and PTF081301F are 130-watt, internally-matched
GOLDMOS
FETs intended for EDGE and CDMA applications in the 869
to 960 MHz bands. Thermally-enhanced packaging provides the coolest
operation available. Full gold metallization ensures excellent device
lifetime and reliability.
PTF081301E
Package 30248
PTF081301F
Package 31248
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 950 mA, f = 959.8 MHz
-30
60
T
CASE
= 25°C
T
CASE
= 90°C
50
40
400 kHz
30
20
10
600 kHz
-90
36
38
40
42
44
46
48
50
0
Features
•
•
•
Drain Efficiency (%)
Thermally-enhanced packages
Broadband internal matching
Typical EDGE performance
- Average output power = 65 W
- Gain = 18 dB
- Efficiency = 40%
Typical CW performance
- Output power at P–1dB = 150 W
- Gain = 17 dB
- Efficiency = 55%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power
Modulation Spectrum (dB)
-40
-50
-60
-70
-80
Efficiency
•
•
•
•
•
Output Power (dBm)
RF Characteristics
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 950 mA, P
OUT
= 65 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
—
—
—
—
—
Typ
2.5
–62
–74
18
40
Max
—
—
—
—
—
Unit
%
dBc
dBc
dB
%
η
D
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03, 2005-05-02
PTF081301E
PTF081301F
RF Characteristics
(cont.)
Two-Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 950 mA, P
OUT
= 130 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
17
40
—
Typ
18
42
–32
Max
—
—
–29
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, I
DS
= 1 A
V
DS
= 28 V, I
DQ
= 950 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.1
2.9
—
Max
—
1.0
—
4.0
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
473
2.70
–40 to +150
0.37
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTF081301E
PTF081301F
Package Outline
30248
31248
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTF081301E
PTF081301F
Data Sheet
2 of 11
Rev. 03, 2005-05-02
PTF081301E
PTF081301F
Typical Performance
(measurements taken in production test fixture)
IM3 vs. Output Power at Selected Biases
V
DD
= 28 V, f
1
= 959, f
2
= 960 MHz, series show I
DQ
-25
Broadband Performance
V
DD
= 28 V, I
DQ
= 950 mA, P
OUT
= 51.14 dBm
55
15
Efficiency
-35
850 mA
-40
950 mA
-45
1050 mA
-50
37
39
41
43
45
47
49
35
Return Loss
-5
25
Gain
15
860
-15
880
900
920
940
-25
960
Output Power (dBm ), Avg.
Frequency (MHz)
Power Sweep
V
DD
= 28 V, f = 960 MHz
19.0
18.5
I
DQ
= 1425 mA
21
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 950 mA, f = 960 MHz
70
Efficiency
20
19
60
50
Gain
40
30
20
10
0
40
42
44
46
48
50
52
54
Power Gain (dB)
18.0
Gain (dB)
17.5
17.0
16.5
16.0
15.5
15.0
40
42
44
46
48
50
52
54
I
DQ
= 475 mA
I
DQ
= 950 mA
18
17
16
15
14
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 11
Rev. 03, 2005-05-02
Drain Efficiency (%)
Return Loss (dB)
-30
Gain (dB), Efficiency (%)
45
5
IMD (dBc)
PTF081301E
PTF081301F
Typical Performance
(cont.)
Output Power
(at 1 dB Compression)
vs. Supply Voltage
I
DQ
= 950 mA, f = 960 MHz
53
IS-95 CDMA Performance
V
DD
= 28 V, I
DQ
= 950 mA, f = 860 MHz
40
35
T
CASE
= 25°C
T
CASE
= 90°C
-40
30
25
20
15
10
5
ADJ f
C
+ 1.98 MHz
30
32
34
36
38
40
42
44
46
Efficiency
ACP f
C
– 0.75 MHz
-50
-55
-60
-65
-70
-75
-80
52
51
50
24
26
28
30
32
0
Supply Voltage (V)
Output Power (dBm), Avg.
IS-95 CDMA Performance
V
DD
= 28 V, I
DQ
= 950 mA, f = 860 MHz
35
6.0
EDGE EVM Performance
V
DD
= 28 V, I
DQ
= 950 mA, f = 959.8 MHz
60
T
CASE
= 25°C
T
CASE
= 90°C
50
40
Efficiency
30
20
10
EVM
0.0
0
36
38
40
42
44
46
48
50
Gain (dB), Efficiency (%)
EVM RMS (average %)
.
30
25
20
15
10
5
0
30
32
34
36
38
40
42
44
46
Efficiency
Gain
5.0
4.0
3.0
2.0
1.0
Average Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 11
Rev. 03, 2005-05-02
Drain Efficiency (%)
Adjacent Channel Power
Ratio (dBc)
-45
Output Power (dBm)
Drain Efficiency (%)
PTF081301E
PTF081301F
Typical Performance
(cont.)
Three-Carrier CDMA 2000 Performance
V
DD
= 28 V, I
DQ
= 950 mA, f = 960 MHz
Adjacent Channel Power Ratio (dBc)
T
CASE
= 25°C
T
CASE
= 90°C
Efficiency
Intermodulation Distortion vs. Output Power
V
DD
(as measured in a broadband circuit)
= 28 V, I
DQ
= 950 mA, f
1
= 959 MHz, f
2
= 960 MHz
3rd Order
-30
-40
-50
-60
7th
-70
-80
37
39
41
43
45
47
49
5th
45
-20
-30
-40
-50
-60
-70
ALT f
C
+ 5.23 MHz
-20
Drain Efficiency (%)
ALT f
C
– 3.21 MHz
15
0
30 32 34
36 38 40 42 44
46 48 50
-80
Output Power (dBm), Avg.
IMD (dBc)
30
ACP f
C
– 1.98 MHz
Output Power (dBm), PEP
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
1.03
0.8 A
3.0 A
5.2 A
7.6 A
9.9 A
12.0 A
Normalized Bias Voltage
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0
20
40
60
80
100
Case Temperature (ºC)
Data Sheet
5 of 11
Rev. 03, 2005-05-02
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