PTF080101S
Thermally-Enhanced High Power RF LDMOS FET
10 W, 860 – 960 MHz
Description
The PTF080101S is a 10-watt, internally-matched
GOLDMOS
FET in-
tended for EDGE and CDMA applications in the 860 to 960 MHz band.
Thermally-enhanced packaging provides the coolest operation possible.
Full gold metallization ensures excellent device lifetime and reliability.
PTF080101S
Package 32259
Features
Typical EDGE Performance
V
DD
= 28 V, I
DQ
= 150 mA, f = 959.8 MHz
T
CASE
= 25°C
T
CASE
= 85°C
Efficiency
•
•
•
50
40
30
20
10
Thermally-enhanced packaging
Broadband internal matching
Typical EDGE performance
- Average output power = 5 W
- Gain = 18.5 dB
- Efficiency = 38%
Typical CW performance
- Output power at P–1dB = 13 W
- Gain = 17.5 dB
- Efficiency = 55%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
5
RMS EVM (Average %)
.
Drain Efficiency (%)
4
3
2
1
•
•
•
•
•
EVM
0
28
30
32
34
36
38
0
Output Power (dBm)
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 150 mA, P
OUT
= 5.0 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
—
—
—
—
—
Typ
2.0
–61
–71
18.5
38
Max
—
—
—
—
—
Units
%
dBc
dBc
dB
%
η
D
Data Sheet
1 of 9
2004-10-05
PTF080101S
RF Characteristics
(cont.)
Two-Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 150 mA, P
OUT
= 10 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
18.0
36.0
—
Typ
18.5
38
–32
Max
—
—
–30
Units
dB
%
dBc
η
D
IMD
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, I
DS
= 0.1 A
V
DS
= 28 V, I
DQ
= 150 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.83
3.2
—
Max
—
1.0
—
4.0
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
58
0.333
–40 to +150
3.0
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTF080101S
Package Outline
32259
Package Description
Thermally-enhanced SMD, single-ended
Marking
PTF080101S
Data Sheet
2 of 9
2004-10-05
PTF080101S
Typical Performance
(measurements taken in production test fixture)
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 150 mA, f = 959.8 MHz
T
CASE
= 25°C
T
CASE
= 85°C
Efficiency
EVM & Modulation Spectrum Performance
V
DD
= 28 V, P
OUT
= 4 W, f = 959.8 MHz
2.0
-55
400 KHz
-60
-65
EVM
1.4
1.2
1.0
0.08
-70
-75
-80
0.22
-55
50
Modulation Spectrum (dBc)
400 kHz
-65
-70
600 kHz
-75
-80
28
30
32
34
36
38
10
0
30
20
Drain Efficiency (%)
-60
40
1.8
1.6
600 KHz
0.10
0.12
0.14
0.16
0.18
0.20
Output Power (dBm)
Quiscent Drain Current (A)
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 150 mA, f = 960 MHz
Broadband Performance
V
DD
= 28 V, I
DQ
= 150 mA, P
OUT
= 10 W
21
20
19
Gain
70
60
30
Efficiency
60
50
Gain
40
30
Return Loss
20
10
960
Gain (dB), Return Loss (dB)
Drain Efficiency (%)
50
40
30
20
Gain (dB)
18
17
16
15
14
20
25
30
35
40
45
Efficiency
10
0
-10
-20
840
10
0
860
880
900
920
940
Output Power (dBm)
Frequency (MHz)
All published data at T
CASE
= 25°C unless otherwise indicated
Data Sheet
3 of 9
2004-10-05
Drain Efficiency (%)
20
Modulation Spectrum (dBc)
EVM RMS (Average %)
.
PTF080101S
Typical Performance
(cont.)
Gain vs. Output Power
V
DD
= 28 V, f = 960 MHz
Output Power vs. Supply Voltage
I
DQ
= 150 mA, f = 960 MHz
20.5
I
DQ
= 300 mA
42
41
40
39
38
37
27
30
33
36
39
42
19.5
I
DQ
= 150 mA
18.5
I
DQ
= 50 mA
17.5
Output Power (dBm)
Power Gain (dB)
20
25
30
35
Output Power (dBm)
Supply Voltage (V)
Intermodulation Distortion vs. Output Power
V
DD
= 28 V, I
DQ
= 150 mA, f
1
= 959 MHz, f
2
= 960 MHz
3-Carrier CDMA 2000 Performance
V
DD
= 28 V, I
DQ
= 150 mA, f = 960 MHz
-20
-30
-40
-50
50
3rd Order
-30
-40
Adj 1.98 MHz
Alt 1, 3.21 MHz
-45
-50
-55
-60
-65
-70
Alt 2, 5.23 MHz
Efficiency
22
24
26
28
30
32
34
36
38
40
-75
-80
Drain Efficiency (%)
40
35
30
25
20
15
10
5
0
5th
7th
-60
-70
-80
25
30
35
40
45
Output Power, PEP (dBm)
Output Power (dBm)
Data Sheet
4 of 9
2004-10-05
Adj. Ch. Power Ratio (dBc)
45
-35
IMD (dBc)
PTF080101S
Typical Performance
(cont.)
IS-95 CDMA Performance
V
DD
= 28 V, I
DQ
= 150 mA, f = 960 MHz
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
-40
1.04
40
35
Adj 750 kHz
Adj. Ch. Power Ratio (dBc)
Normalized Bias Voltage
-45
-50
-55
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
0
20
40
60
80
Drain Efficiency (%)
30
25
20
15
10
5
0
18 20
22 24
26 28 30
32 34
36 38
Alt 1 1.98MHz
Efficiency
0.05 A
0.28 A
0.51 A
0.74 A
0.97 A
1.20 A
-60
-65
-70
-75
-80
100
Output Power (dBm), Avg.
Case Temperature (°C)
Broadband Circuit Impedance
D
NER
ATO
R
--
->
Z
0
= 50
Ω
0. 2
Z Source
Z Load
G
S
960 MHz
860 MHz
Z Load
Frequency
MHz
860
880
900
920
940
960
Z Source
Ω
R
1.4
1.3
1.4
1.5
1.5
1.6
jX
–0.8
–0.2
0.2
0.5
1.0
1.1
R
Z Load
Ω
jX
8.0
W
ARD
L
OA
D
-
T HS
T
O
0.0
10.0
10.0
10.0
10.0
10.1
10.3
0.1
8.4
8.7
9.0
9.3
9.4
860 MHz
0. 1
Data Sheet
5 of 9
0.2
0.1
Z Source
960 MHz
2004-10-05
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