NCV8460
Self Protected High Side
Driver with Temperature
Shutdown and Current Limit
The NCV8460 is a fully protected High−Side driver that can be used
to switch a wide variety of loads, such as bulbs, solenoids and other
acuators. The device is internally protected from an overload
condition by an active current limit and thermal shutdown.
A diagnostic output reports ON and OFF state open load conditions
as well as thermal shutdown.
Features
8
1
V8460
A
L
Y
W
G
http://onsemi.com
MARKING
DIAGRAM
8
SO−8
D SUFFIX
CASE 751
1
V8460
ALYW
G
•
•
•
•
•
•
•
•
•
•
•
Short Circuit Protection
Thermal Shutdown with Automatic Restart
CMOS (3.3 V / 5 V) compatible control input
Open Load Detection in On and Off State
Diagnostic Output
Undervoltage and Overvoltage Shutdown
Loss of Ground Protection
ESD protection
Slew Rate Control for Low EMI Switching
Very Low Standby Current
NCV Prefix for Automotive and Other Applications Requiring
AEC−Q100 Qualified Site and Change Controls
•
These are Pb−Free Devices
Typical Applications
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
PIN CONNECTIONS
GND 1
IN 2
STAT 3
NC
4
(Top View)
8
7
6
5
VD
OUT
OUT
VD
•
Switch a Variety of Resistive, Inductive and Capacitive Loads
•
Can Replace Electromechanical Relays and Discrete Circuits
•
Automotive / Industrial
ORDERING INFORMATION
Device
NCV8460DR2G
Package
SOIC−8
(Pb−Free)
Shipping
†
1000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
April, 2011
−
Rev. 0
1
Publication Order Number:
NCV8460/D
NCV8460
VD
Overvoltage
Detection
Undervoltage
Detection
Regulated
Chargepump
IN
Input
Buffer
Control
Logic
Pre
Driver
Output
Clamping
STAT
Current
Limitation
Overtemperature
Detection
í
OUT
GND
On−State
Open Load Detection
Off−State
Open Load Detection
Figure 1. Block Diagram
PIN DESCRIPTION
Pin #
1
2
3
4
5
6
7
8
Symbol
GND
IN
STAT
N/C
V
D
OUT
OUT
V
D
Ground
Logic Level Input
Status Output
No Connection
Supply Voltage
Output
Output
Supply Voltage
Description
http://onsemi.com
2
NCV8460
MAXIMUM RATINGS
Value
Rating
DC Supply Voltage
Peak Transient Input Voltage
(Load Dump 51.5 V, V
D
= 13.5 V, ISO7637−2 pulse 5)
Input Voltage
Input Current
Output Current (Note 2
)
Negative Ground Current
Status Current
Power Dissipation Tc = 25°C
Electrostatic Discharge
(HBM Model 100 pF / 1500
W)
Input
Status
Output
V
D
Single Pulse Inductive Load Switching Energy (Note 1)
(L = 1.8 mH, V
bat
= 13.5 V; I
L
= 9 A, T
Jstart
= 150°C
Operating Junction Temperature
Storage Temperature
E
AS
T
J
T
storage
Symbol
V
D
V
peak
V
in
I
in
I
out
−I
gnd
I
status
P
tot
−8
−5
−6
−200
−5
1.183
Min
−16
Max
42
65
8
5
Internally
Limited
−
5
Unit
V
V
V
mA
A
mA
mA
W
DC
4
3.5
5
5
100
−40
−55
+150
+150
kV
kV
kV
kV
mJ
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Not subjected to production testing
2. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance.
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance
Junction−to−Lead
Junction−to−Ambient (min. Pad)
Junction−to−Ambient (1” square pad size, FR−4, 1 oz Cu)
Symbol
R
qJL
R
qJA
R
qJA
Max Value
72
110.8
105.6
Unit
°C/W
°C/W
°C/W
http://onsemi.com
3
NCV8460
ELECTRICAL CHARACTERISTICS
(8
≤
V
D
≤
36 V;
−40°C
< T
J
< 150°C unless otherwise specified)
Value
Rating
Operating Supply
Voltage
Undervoltage Shutdown
Undervoltage
Overvoltage Shutdown
On Resistance
Standby Current
Symbol
V
D
V
UV
V
UV_Rst
V
OV
R
ON
I
D
I
out
= 2 A; T
J
= 25°C, V
D
> 6 V
I
out
= 2 A, V
D
> 6 V
Off State, V
in
= V
out
= 0 V, V
D
= 13.5 V
On State; V
in
= 5 V, V
D
= 13.5 V, I
out
= 0 A
V
in
= V
out
= 0 V
V
in
= 0 V, V
out
= 3.5 V
V
in
= V
out
= 0 V, V
D
= 13.5 V
10
1.5
36
60
120
20
3.5
Conditions
Min
6
3
Typ
−
4
Max
36
5.5
6
Unit
V
V
V
V
mW
mA
mA
mA
Output Leakage Current
I
L
−20
50
10
3
INPUT CHARACTERISTICS
Input Voltage
−
Low
Input Current
−
Low
Input Voltage
−
High
Input Current
−
High
Input Hysteresis Voltage
Input Clamp Voltage
V
in_low
I
in_low
V
in_high
I
in_high
V
hyst
V
in_cl
I
in
= 1 mA
I
in
=
−1
mA
to 10% V
out
, V
D
= 13.5 V, R
L
= 6.5
W
to 90% V
out
, V
D
= 13.5 V, R
L
= 6.5
W
10% to 80% V
out
, V
D
= 13.5 V, R
L
= 6.5
W
90% to 10% V
out
, V
D
= 13.5 V, R
L
= 6.5
W
I
out
=
−1.3
A, T
J
= 150°C
I
stat
= 1.6 mA
V
stat
= 5 V
V
stat
= 5 V (Note 3)
I
stat
=1 mA
I
stat
=
−1
mA
10
−2.2
11
−1.2
0.2
1
V
in
= 3.25 V
0.25
11
−13
12
−12
13
−11
V
in
= 1.25 V
1
3.25
10
1.25
V
mA
V
mA
V
V
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Turn−Off Delay Time
Slew Rate On
Slew Rate Off
Forward Voltage
Status Output Voltage
Low
Status Leakage Current
Status Pin Input
Capacitance
Status Clamp Voltage
t
d_on
t
d_off
dV
out
/ dt
on
dV
out
/ dt
off
V
F
V
stat_low
I
stat_leakage
C
stat
V
stat_cl
40
30
0.9
0.7
0.6
0.5
10
100
12
−0.6
ms
ms
V /
ms
V /
ms
V
V
mA
pF
V
OUTPUT DIODE CHARACTERISTICS
(Note 3)
STATUS PIN CHARACTERISTICS
PROTECTION FUNCTIONS
(Note 4)
Temperature Shutdown
(Note 3)
Temperature Shutdown
Hysteresis (Note 3)
Output Current Limit
Status Delay in Overload
T
SD
T
SD_hyst
I
lim
t
d_stat
8 V < V
D
< 36 V
6 V < V
D
< 36 V
150
7
6
5
175
15
9
15
15
20
200
°C
°C
A
A
ms
3. Not subjected to production testing
4. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used
together with a proper hardware/software strategy. If the devices operates under abnormal conditions this hardware/software solutions
must limit the duration and number of activation cycles.
http://onsemi.com
4
NCV8460
ELECTRICAL CHARACTERISTICS
(8
≤
V
D
≤
36 V;
−40°C
< T
J
< 150°C unless otherwise specified)
Value
Rating
Switch Off Output Clamp
Voltage
Symbol
V
clamp
Conditions
I
out
= 2 A, V
in
= 0 V, L = 6 mH
Min
Typ
Max
Unit
V
PROTECTION FUNCTIONS
(Note 4)
V
D
−
41
V
D
−
45
V
D
−
55
DIAGNOSTICS CHARACTERISTICS
Openload On State
Detection Threshold
Openload On State
Detection Delay
Openload Off State
Detection Threshold
Openload Detection
Delay at Turn Off
I
OL
t
d_OL_on
V
OL
t
d_OL_off
V
in
= 5 V
I
out
= 0 A
V
in
= 0 V
1.5
−
30
300
200
3.5
1000
mA
ms
V
ms
3. Not subjected to production testing
4. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used
together with a proper hardware/software strategy. If the devices operates under abnormal conditions this hardware/software solutions
must limit the duration and number of activation cycles.
I
out
< I
OL
V
IN
V
out
> V
OL
V
IN
T
J
> T
J_TSD
V
STAT
V
STAT
T
d_OL_off
T
d_OL_on
T
d_STAT
T
d_STAT
Figure 2. Open Load Status Timing
(with external pull−up)
Figure 3. Overtemperature Status Timing
V
out
80%
90%
dV
out
/ dt
(on)
10%
dV
out
/ dt
(off)
t
t
d(on)
t
d(off)
V
in
t
Figure 4. Switching Timing Diagram
http://onsemi.com
5