40 A, 1200 V, N-CHANNEL IGBT
40 A, 1200 V, N沟道 IGBT
| 参数名称 | 属性值 |
| 端子数量 | 11 |
| 额定关断时间 | 520 ns |
| 最大集电极电流 | 40 A |
| 最大集电极发射极电压 | 1200 V |
| 加工封装描述 | PLASTIC, CASE T 14, SEMITOP 3, 11 PIN |
| 无铅 | Yes |
| 欧盟RoHS规范 | Yes |
| 状态 | ACTIVE |
| 包装形状 | RECTANGULAR |
| 包装尺寸 | FLANGE MOUNT |
| 端子形式 | UNSPECIFIED |
| 端子涂层 | TIN/SILVER |
| 端子位置 | UPPER |
| 包装材料 | PLASTIC/EPOXY |
| 结构 | SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE |
| 壳体连接 | ISOLATED |
| 元件数量 | 1 |
| 晶体管应用 | POWER CONTROL |
| 晶体管元件材料 | SILICON |
| 通道类型 | N-CHANNEL |
| 晶体管类型 | INSULATED GATE BIPOLAR |
| 额定导通时间 | 115 ns |

| SK55DGL126_10 | SK55DGL126 | |
|---|---|---|
| 描述 | 40 A, 1200 V, N-CHANNEL IGBT | 40 A, 1200 V, N-CHANNEL IGBT |
| 端子数量 | 11 | 11 |
| 额定关断时间 | 520 ns | 520 ns |
| 最大集电极电流 | 40 A | 40 A |
| 最大集电极发射极电压 | 1200 V | 1200 V |
| 加工封装描述 | PLASTIC, CASE T 14, SEMITOP 3, 11 PIN | PLASTIC, CASE T 14, SEMITOP 3, 11 PIN |
| 无铅 | Yes | Yes |
| 欧盟RoHS规范 | Yes | Yes |
| 状态 | ACTIVE | ACTIVE |
| 包装形状 | RECTANGULAR | RECTANGULAR |
| 包装尺寸 | FLANGE MOUNT | FLANGE MOUNT |
| 端子形式 | UNSPECIFIED | UNSPECIFIED |
| 端子涂层 | TIN/SILVER | TIN/SILVER |
| 端子位置 | UPPER | UPPER |
| 包装材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 结构 | SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE | SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE |
| 壳体连接 | ISOLATED | ISOLATED |
| 元件数量 | 1 | 1 |
| 晶体管应用 | POWER CONTROL | POWER CONTROL |
| 晶体管元件材料 | SILICON | SILICON |
| 通道类型 | N-CHANNEL | N-CHANNEL |
| 晶体管类型 | INSULATED GATE BIPOLAR | INSULATED GATE BIPOLAR |
| 额定导通时间 | 115 ns | 115 ns |
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