SK75GD126T
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITOP
®
4
IGBT Module
SK75GD126T
Inverse Diode
Module
Preliminary Data
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications*
GD-T
1
27-08-2008 DIL
© by SEMIKRON
SK75GD126T
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max.
Units
SEMITOP
®
4
IGBT Module
SK75GD126T
Temperature sensor
Preliminary Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Typical Applications*
GD-T
2
27-08-2008 DIL
© by SEMIKRON
SK75GD126T
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
s
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 6 Typ. gate charge characteristic
3
27-08-2008 DIL
© by SEMIKRON
SK75GD126T
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 10 CAL diode forward characteristic
4
27-08-2008 DIL
© by SEMIKRON
SK75GD126T
UL recognized file
no. E 63 532
5
27-08-2008 DIL
© by SEMIKRON
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