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MT46H32M32LFCM-7.5:A

产品描述IC,SDRAM,DDR,4X8MX32,CMOS,BGA,90PIN,PLASTIC
产品类别存储    存储   
文件大小4MB,共79页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准  
下载文档 详细参数 全文预览

MT46H32M32LFCM-7.5:A概述

IC,SDRAM,DDR,4X8MX32,CMOS,BGA,90PIN,PLASTIC

MT46H32M32LFCM-7.5:A规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Micron Technology
包装说明FBGA, BGA90,9X15,32
Reach Compliance Codecompliant
最长访问时间6 ns
最大时钟频率 (fCLK)133 MHz
I/O 类型COMMON
交错的突发长度2,4,8
JESD-30 代码R-PBGA-B90
JESD-609代码e3
内存密度1073741824 bit
内存集成电路类型DDR DRAM
湿度敏感等级1
端子数量90
字数33554432 words
字数代码32000000
最高工作温度70 °C
最低工作温度
组织32MX32
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码FBGA
封装等效代码BGA90,9X15,32
封装形状RECTANGULAR
封装形式GRID ARRAY, FINE PITCH
峰值回流温度(摄氏度)260
电源1.8 V
认证状态Not Qualified
刷新周期8192
连续突发长度2,4,8
最大待机电流0.0006 A
最大压摆率0.14 mA
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层MATTE TIN
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30

文档预览

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1Gb: x16, x32 Mobile DDR SDRAM
Features
Mobile DDR SDRAM
MT46H64M16LF – 16 Meg x 16 x 4 banks
MT46H32M32LF – 8 Meg x 32 x 4 banks
Features
Endur-IC™ technology
V
DD/
V
DD
Q = 1.70–1.95V
Bidirectional data strobe per byte of data (DQS)
Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
Four internal banks for concurrent operation
Data masks (DM) for masking write data—one mask
per byte
Programmable burst lengths: 2, 4, or 8
Concurrent auto precharge option is supported
Auto refresh and self refresh modes
1.8V LVCMOS-compatible inputs
On-chip temperature sensor to control self refresh
rate
Partial-array self refresh (PASR)
Deep power-down (DPD)
Status read register (SRR)
Selectable output drive strength (DS)
Clock stop capability
64ms refresh
Options
• V
DD
/V
DD
Q
1.8V/1.8V
• Configuration
64 Meg x 16 (16 Meg x 16 x 4 banks)
32 Meg x 32 (8 Meg x 32 x 4 banks)
• Row-size option
JEDEC-standard option
Reduced page-size option
1
• Plastic “green” package
60-ball VFBGA (10mm x 11.5mm)
2
90-ball VFBGA (10mm x 13mm)
3
• Timing – cycle time
6ns @ CL = 3
7.5ns @ CL = 3
• Operating temperature range
Commercial (0° to +70°C)
Industrial (–40°C to +85°C)
Marking
H
64M16
32M32
LF
LG
CK
CM
-6
-75
None
IT
Notes: 1. Contact factory for availability.
2. Only available for x16 configuration.
3. Only available for x32 configuration.
Table 1:
Key Timing Parameters (CL = 3)
Clock Rate (MHz)
166
133
Access Time
5.5ns
6.0ns
Speed Grade
-6
-75
Table 2:
Configuration Addressing
64 Meg x 16
16 Meg x 16 x 4 banks
8K
16K (A0–A13)
1K (A0–A9)
32 Meg x 32
8 Meg x 32 x 4 banks
8K
8K (A0–A12)
1K (A0–A9)
Reduced Page-Size Option
32 Meg x 32
8 Meg x 32 x 4 banks
8K
16K (A0–A13)
512 (A0–A8)
Architecture
Configuration
Refresh count
Row addressing
Column addressing
PDF: 09005aef82ce3074/Source: 09005aef82cd0158
1Gb_DDR_Mobile_SDRAM_Density1.fm - Rev. C 09/07 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

 
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