SK50GD066ET
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITOP
®
3
Inverse Diode
IGBT Module
SK50GD066ET
Module
Target Data
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications*
GD-ET
1
05-10-2009 DIL
© by SEMIKRON
SK50GD066ET
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max.
Units
SEMITOP
®
3
IGBT Module
SK50GD066ET
Temperature sensor
Target Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Typical Applications*
GD-ET
2
05-10-2009 DIL
© by SEMIKRON
SK50GD066ET
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
s
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 6 Typ. gate charge characteristic
3
05-10-2009 DIL
© by SEMIKRON
SK50GD066ET
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 10 CAL diode forward characteristic
4
05-10-2009 DIL
© by SEMIKRON
SK50GD066ET
UL recognized
file no. E63 532
5
05-10-2009 DIL
© by SEMIKRON
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