SEMiX603GAR066HDs
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 360 V
V
GE
≤
15 V
V
CES
≤
600 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
c
= 25 °C
T
c
= 80 °C
T
j
= 150 °C
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
600
720
541
600
1200
-20 ... 20
6
-40 ... 175
771
562
600
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
1200
1800
-40 ... 175
T
c
= 25 °C
T
c
= 80 °C
795
577
600
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
1200
1800
-40 ... 175
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 3s
Trench IGBT Modules
SEMiX603GAR066HDs
®
T
j
= 175 °C
I
Fnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• UL recognised file no. E63532
I
FRM
I
FSM
T
j
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 175 °C
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• For short circuit: Soft R
Goff
recommended
• Take care of over-voltage caused by
stray inductance
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
I
C
= 600 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 150 °C
5
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
37.0
2.31
1.10
4800
0.67
1.45
1.7
0.9
0.85
0.9
1.4
5.8
0.15
1.85
2.1
1
0.9
1.4
2.0
6.5
0.45
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
Conditions
min.
typ.
max.
Unit
V
GE
=V
CE
, I
C
= 9.6 mA
V
GE
= 0 V
V
CE
= 600 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
GAR
© by SEMIKRON
Rev. 0 – 16.04.2010
1
SEMiX603GAR066HDs
Characteristics
Symbol
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
Conditions
V
CC
= 300 V
I
C
= 600 A
R
G on
= 3
Ω
R
G off
= 3
Ω
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
per IGBT
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
I
F
= 600 A
T
j
= 150 °C
di/dt
off
= 3800 A/µs T = 150 °C
j
V
GE
= -8 V
T
j
= 150 °C
V
CC
= 300 V
per diode
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
I
F
= 600 A
T
j
= 150 °C
di/dt
off
= 3800 A/µs T = 150 °C
j
V
GE
= -8 V
T
j
= 150 °C
V
CC
= 300 V
per diode
min.
typ.
150
145
12
1050
105
43
max.
Unit
ns
ns
mJ
ns
ns
mJ
SEMiX 3s
Trench IGBT Modules
SEMiX603GAR066HDs
®
R
th(j-c)
0.087
1.4
1.4
0.9
0.75
0.5
0.8
1
0.85
0.7
0.9
350
63
13
0.11
1.3
1.3
0.9
0.75
0.4
0.7
1
0.85
0.6
0.8
350
63
13
0.11
20
1.5
1.5
1.1
0.95
0.7
0.9
1.60
1.6
1.1
0.95
0.8
1.1
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
nH
mΩ
mΩ
K/W
Inverse diode
V
F
= V
EC
I
F
= 600 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Freewheeling diode
V
F
= V
EC
I
F
= 600 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
Temperatur Sensor
R
100
B
100/125
res., terminal-chip
per module
to heat sink (M5)
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• For short circuit: Soft R
Goff
recommended
• Take care of over-voltage caused by
stray inductance
T
C
= 25 °C
T
C
= 125 °C
3
to terminals (M6)
2.5
0.7
1
0.04
5
5
300
Nm
Nm
Nm
g
Ω
K
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)];
T[K];
493 ± 5%
3550
±2%
GAR
2
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX603GAR066HDs
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 16.04.2010
3
SEMiX603GAR066HDs
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX603GAR066HDs
SEMiX 3s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 16.04.2010
5
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