SEMiX604GAR12E4s
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 800 V
V
GE
≤
20 V
V
CES
≤
1200 V
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
1200
916
704
600
1800
-20 ... 20
T
j
= 150 °C
10
-40 ... 175
T
c
= 25 °C
T
c
= 80 °C
707
529
600
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
1800
3240
-40 ... 175
T
c
= 25 °C
T
c
= 80 °C
707
529
600
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
1800
3240
-40 ... 175
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 4s
Trench IGBT Modules
SEMiX604GAR12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
®
V
GES
t
psc
T
j
I
F
I
Fnom
I
FRM
I
FSM
T
j
Inverse diode
T
j
= 175 °C
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 175 °C
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• Dynamic values apply to the
following combination of resistors:
R
Gon,main
= 1,0
R
Goff,main
= 6,2
R
G,X
= 2,2
R
E,X
= 0,5
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
Conditions
I
C
= 600 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
T
j
= 25 °C
T
j
= 150 °C
min.
typ.
1.8
2.2
0.8
0.7
1.7
2.5
max.
2.05
2.4
0.9
0.8
1.9
2.7
6.5
0.36
Unit
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
V
GE
=V
CE
, I
C
= 24 mA
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
5
5.8
0.12
37.2
2.32
2.04
3400
1.25
GAR
© by SEMIKRON
Rev. 0 – 16.11.2010
1
SEMiX604GAR12E4s
Characteristics
Symbol
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
V
CC
= 600 V
I
C
= 600 A
Conditions
T
j
= 150 °C
T
j
= 150 °C
min.
typ.
374
85
35
1277
114
110.4
max.
Unit
ns
ns
mJ
ns
ns
mJ
T
j
= 150 °C
R
G on
= 1.7
T
j
= 150 °C
R
G off
= 6.9
di/dt
on
= 7100 A/µs T
j
= 150 °C
di/dt
off
= 6350 A/µs
T
j
= 150 °C
per IGBT
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
I
F
= 600 A
T
j
= 150 °C
di/dt
off
= 6000 A/µs T = 150 °C
j
V
GE
= -15 V
T
j
= 150 °C
V
CC
= 600 V
per diode
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
I
F
= 600 A
T
j
= 150 °C
di/dt
off
= 6000 A/µs T = 150 °C
j
V
GE
= -15 V
T
j
= 150 °C
V
CC
= 600 V
per diode
T
j
= 150 °C
1.1
0.7
1.1
1.7
T
j
= 150 °C
1.1
0.7
1.1
1.7
SEMiX 4s
Trench IGBT Modules
SEMiX604GAR12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
®
0.049
2.1
2.1
1.3
0.9
1.4
1.9
430
100
44
0.086
2.1
2.1
1.3
0.9
1.4
1.9
430
100
44
0.086
22
2.46
2.4
1.5
1.1
1.6
2.1
2.46
2.4
1.5
1.1
1.6
2.1
K/W
V
V
V
V
m
m
A
µC
mJ
K/W
V
V
V
V
m
m
A
µC
mJ
K/W
nH
m
m
K/W
Inverse diode
V
F
= V
EC
I
F
= 600 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Freewheeling diode
V
F
= V
EC
I
F
= 600 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
Temperatur Sensor
R
100
B
100/125
res., terminal-chip
per module
to heat sink (M5)
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• Dynamic values apply to the
following combination of resistors:
R
Gon,main
= 1,0
R
Goff,main
= 6,2
R
G,X
= 2,2
R
E,X
= 0,5
T
C
= 25 °C
T
C
= 125 °C
3
to terminals (M6)
2.5
0.7
1
0.03
5
5
400
Nm
Nm
Nm
g
K
T
c
=100°C (R
25
=5 k)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
493 ± 5%
3550
±2%
GAR
2
Rev. 0 – 16.11.2010
© by SEMIKRON
SEMiX604GAR12E4s
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 16.11.2010
3
SEMiX604GAR12E4s
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 0 – 16.11.2010
© by SEMIKRON
SEMiX604GAR12E4s
SEMiX 4s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 16.11.2010
5
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