SEMiX603GB066HDs
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 360 V
V
GE
≤
15 V
V
CES
≤
600 V
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
600
720
541
600
1200
-20 ... 20
T
j
= 150 °C
6
-40 ... 175
T
c
= 25 °C
T
c
= 80 °C
771
562
600
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
1200
1800
-40 ... 175
T
terminal
= 80 °C
AC sinus 50Hz, t = 1 min
600
-40 ... 125
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 3s
Trench IGBT Modules
SEMiX603GB066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• UL recognised file no. E63532
®
V
GES
t
psc
T
j
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Inverse diode
T
j
= 175 °C
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
per IGBT
Conditions
I
C
= 600 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
V
GE
= 0 V
V
CE
= 600 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 300 V
I
C
= 600 A
V
GE
= ±15 V
R
G on
= 3
R
G off
= 3
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
min.
typ.
1.45
1.7
0.9
0.85
0.9
1.4
max.
1.85
2.1
1
0.9
1.4
2.0
6.5
0.45
Unit
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• For short circuit: Soft R
Goff
recommended
• Take care of over-voltage caused by
stray inductance
V
GE
=V
CE
, I
C
= 9.6 mA
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
5
5.8
0.15
37.0
2.31
1.10
4800
0.67
150
145
12
1050
105
43
0.087
K/W
GB
© by SEMIKRON
Rev. 1 – 23.03.2011
1
SEMiX603GB066HDs
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
r
F
T
j
= 25 °C
I
F
= 600 A
T
j
= 150 °C
di/dt
off
= 3800 A/µs T = 150 °C
j
V
GE
= -8 V
T
j
= 150 °C
V
CC
= 300 V
per diode
T
j
= 150 °C
0.9
0.75
0.5
0.8
min.
typ.
1.4
1.4
1
0.85
0.7
0.9
350
63
13
max.
1.60
1.6
1.1
0.95
0.8
1.1
Unit
V
V
V
V
m
m
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 600 A
V
GE
= 0 V
chip
V
F0
SEMiX
®
3s
Trench IGBT Modules
SEMiX603GB066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• UL recognised file no. E63532
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
0.11
20
K/W
nH
m
m
K/W
res., terminal-chip
per module
to heat sink (M5)
T
C
= 25 °C
T
C
= 125 °C
3
to terminals (M6)
2.5
0.7
1
0.04
5
5
300
Nm
Nm
Nm
g
K
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Temperatur Sensor
R
100
B
100/125
T
c
=100°C (R
25
=5 k)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
493 ± 5%
3550
±2%
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• For short circuit: Soft R
Goff
recommended
• Take care of over-voltage caused by
stray inductance
GB
2
Rev. 1 – 23.03.2011
© by SEMIKRON
SEMiX603GB066HDs
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1 – 23.03.2011
3
SEMiX603GB066HDs
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 1 – 23.03.2011
© by SEMIKRON
SEMiX603GB066HDs
SEMiX 3s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1 – 23.03.2011
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
