IL710
High Speed Digital Isolators
Functional Diagram
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
High Speed: 150 Mbps typical (IL710S)
3 V to 5.5 V power supplies
50 kV/μs typ.; 30 kV/μs min. common mode transient immunity
No carrier or clock for low EMI emissions and susceptibility
1.2 mA/channel typical quiescent current
300 ps typical pulse width distortion (IL710S)
100 ps pulse jitter
2 ns channel-to-channel skew
10 ns typical propagation delay
600 V
RMS
working voltage per VDE 0884
2500 V
RMS
isolation voltage per UL 1577
44000 year barrier life
Excellent magnetic immunity
UL 1577 recognized; IEC 60747-5-5 (VDE 0884) certified
8-pin MSOP, SOIC, and PDIP packages
V
OE
IN
1
OUT
1
IL710
Truth Table
V
I
L
H
L
H
V
OE
L
L
H
H
V
O
L
H
Z
Z
Applications
•
•
•
•
•
•
•
•
Digital Fieldbus
RS-485 and RS-422
Ground loop elimination
Peripheral interfaces
Serial communication
Logic level shifting
Equipment covered under IEC 61010-1 Edition 3
5 kV
RMS
rated IEC 60601-1 medical applications
Description
NVE’s IL700 family of high-speed digital isolators are CMOS
devices manufactured with NVE’s patented* IsoLoop
®
spintronic
Giant Magnetoresistive (GMR) technology. The IL710S is the
world’s fastest isolator of its type, with a 150 Mbps typical data rate.
A unique ceramic/polymer composite barrier provides excellent
isolation and virtually unlimited barrier life.
The symmetric magnetic coupling barrier provides a typical
propagation delay of only 10 ns and a pulse width distortion as low
as 300 ps (0.3 ns), achieving the best specifications of any isolator.
Typical transient immunity of 50 kV/µs is unsurpassed. The IL710
is ideal for isolating applications such as PROFIBUS, RS-485, and
RS-422.
The IL710 is available in 8-pin MSOP, SOIC, and PDIP packages.
Standard and S-Grade parts are specified over a temperature range
of
−40°C
to +100°C; T-Grade parts are specified over a temperature
range of
−40°C
to +125°C.
IsoLoop is a registered trademark of NVE Corporation.
*U.S. Patent numbers 5,831,426; 6,300,617 and others.
REV. AC
NVE Corporation
11409 Valley View Road, Eden Prairie, MN 55344-3617
Phone: (952) 829-9217
Fax: (952) 829-9189
www.IsoLoop.com
©NVE Corporation
IL710
Absolute Maximum Ratings
Parameters
Storage Temperature
Junction Temperature
Ambient Operating Temperature
(1)
IL710T
Supply Voltage
Input Voltage
Input Voltage
Output Voltage
Output Current Drive
Lead Solder Temperature
ESD
Symbol
T
S
T
J
T
A
V
DD
1
, V
DD
2
V
I
V
OE
V
O
I
O
Min.
−55
−55
−40
−0.5
−0.5
−0.5
−0.5
Typ.
Max.
150
150
100
125
7
V
DD
1
+0.5
V
DD
2
+0.5
V
DD
2
+0.5
10
260
Units
°C
°C
°C
V
V
V
V
mA
°C
kV
Test Conditions
2
10 sec.
HBM
Recommended Operating Conditions
Parameters
Ambient Operating Temperature
IL710 and IL710S
IL710T
Junction Temperature
IL710 and IL710S
IL710T
Supply Voltage
Logic High Input Voltage
Logic Low Input Voltage
Input Signal Rise and Fall Times
Symbol
T
A
T
J
V
DD
1
, V
DD
2
V
IH
V
IL
t
IR
, t
IF
Min.
−40
−40
−40
−40
3.0
2.4
0
Typ.
Max.
100
125
110
125
5.5
V
DD
1
0.8
1
Units
°C
°C
°C
°C
V
V
V
μs
Test Conditions
Insulation Specifications
Parameters
Creepage Distance (external)
MSOP
SOIC
PDIP
Total Barrier Thickness (internal)
Leakage Current
(5)
Barrier Resistance
(5)
Barrier Capacitance
(5)
Comparative Tracking Index
High Voltage Endurance
AC
(Maximum Barrier Voltage
for Indefinite Life)
DC
Barrier Life
Symbol
Min.
3.01
4.04
7.04
0.012
R
IO
C
IO
CTI
V
IO
Typ.
Max.
Units
mm
mm
mm
mm
μA
Ω
pF
V
V
RMS
V
DC
44000
Years
Test Conditions
0.013
0.2
>10
14
1.1
≥175
1000
1500
240 V
RMS
, 60 Hz
500 V
f = 1 MHz
Per IEC 60112
At maximum
operating temperature
100°C, 1000 V
RMS
, 60%
CL activation energy
Thermal Characteristics
Parameter
Junction–Ambient
Thermal Resistance
Junction–Case (Top)
Thermal Resistance
Power Dissipation
MSOP
SOIC
PDIP
MSOP
SOIC
PDIP
MSOP
SOIC
PDIP
Symbol
θ
JA
Ψ
JT
P
D
Min.
Typ.
80
60
60
40
10
20
Max.
Units
°C/W
°C/W
500
675
800
mW
Test Conditions
Soldered to double-
sided board;
free air
2
NVE Corporation
11409 Valley View Road, Eden Prairie, MN 55344-3617
Phone: (952) 829-9217
Fax: (952) 829-9189
www.IsoLoop.com
©NVE Corporation
IL710
Safety and Approvals
IEC 60747-5-5 (VDE 0884)
(File Number 5016933-4880-0001)
•
Working Voltage (V
IORM
) 600 V
RMS
(848 V
PK
); basic insulation; pollution degree 2
•
Transient overvoltage (V
IOTM
) and surge voltage (V
IOSM
) 4000 V
PK
•
Each part tested at 1590 V
PK
for 1 second, 5 pC partial discharge limit
•
Samples tested at 4000 V
PK
for 60 sec.; then 1358 V
PK
for 10 sec. with 5 pC partial discharge limit
Safety-Limiting Values
Safety rating ambient temperature
Safety rating power (180°C)
Supply current safety rating (total of supplies)
Symbol
T
S
P
S
I
S
Value
180
270
54
Units
°C
mW
mA
IEC 61010-1
(Edition 2; TUV Certificate Numbers N1502812; N1502812-101)
Reinforced Insulation; Pollution Degree II; Material Group III
Part No. Suffix
-1
-2
-3
Package
MSOP
PDIP
SOIC
Working Voltage
150 V
RMS
300 V
RMS
150 V
RMS
UL 1577
(Component Recognition Program File Number E207481)
Each part other than MSOP tested at 3000 V
RMS
(4240 V
PK
) for 1 second; each lot sample tested at 2500 V
RMS
(3530 V
PK
) for 1 minute
MSOP tested at 1200 V
RMS
(1768 V
PK
) for 1 second; each lot sample tested at 1200 V
RMS
(1768 V
PK
) for 1 minute
Soldering Profile
Per JEDEC J-STD-020C, MSL 1
IL710 Pin Connections
1
2
3
4
5
6
7
8
V
DD1
IN
NC
GND
1
GND
2
OUT
V
OE
V
DD2
Supply voltage
Data In
No internal connection
Ground return for V
DD1
Ground return for V
DD2
Data Out
Output enable.
Internally held low with 100 kΩ
Supply voltage
V
DD1
IN
NC
GND
1
V
DD2
V
OE
OUT
GND
2
IL710
Timing Diagram
Legend
t
PLH
t
PHL
t
PW
t
PLZ
t
PZH
t
PHZ
t
PZL
t
R
t
F
Propagation Delay, Low to High
Propagation Delay, High to Low
Minimum Pulse Width
Propagation Delay, Low to High Impedance
Propagation Delay, High Impedance to High
Propagation Delay, High to High Impedance
Propagation Delay, High Impedance to Low
Rise Time
Fall Time
3
NVE Corporation
11409 Valley View Road, Eden Prairie, MN 55344-3617
Phone: (952) 829-9217
Fax: (952) 829-9189
www.IsoLoop.com
©NVE Corporation
IL710
3.3 Volt Electrical Specifications
(T
min
to T
max
unless otherwise stated)
Parameters
Symbol
Min.
Typ.
Max.
Units
Input Quiescent Supply Current
I
DD1
8
10
μA
Output Quiescent Supply Current
I
DD2
1.2
1.75
mA
Logic Input Current
I
I
−10
10
μA
V
DD
−0.1
V
DD
Logic High Output Voltage
V
OH
V
0.8 x V
DD
0.9 x V
DD
0
0.1
Logic Low Output Voltage
V
OL
V
0.5
0.8
Switching Specifications
(V
DD
= 3.3 V)
Maximum Data Rate
IL710 and IL710T
IL710S
Pulse Width
(7)
Propagation Delay Input to Output
(High to Low)
Propagation Delay Input to Output
(Low to High)
Propagation Delay Enable to Output
(High to High Impedance)
Propagation Delay Enable to Output
(Low to High Impedance)
Propagation Delay Enable to Output
(High Impedance to High)
Propagation Delay Enable to Output
(High Impedance to Low)
Pulse Width Distortion
(2)
IL710 and IL710T
IL710S
Pulse Jitter
(10)
Propagation Delay Skew
(3)
Output Rise Time (10%–90%)
Output Fall Time (10%–90%)
Common Mode Transient Immunity
(Output Logic High or Logic Low)
(4)
Dynamic Power Consumption
(6)
100
130
10
110
140
7.5
12
12
3
3
3
3
2
1
100
4
2
2
30
50
140
240
18
18
5
5
5
5
3
3
6
4
4
Mbps
Mbps
ns
ns
ns
ns
ns
ns
ns
ns
ps
ns
ns
ns
kV/μs
μA/Mbps
C
L
= 15 pF
C
L
= 15 pF
50% Points, V
O
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
V
CM
= 1500 V
DC
t
TRANSIENT
= 25 ns
Test Conditions
I
O
=
−20 μA,
V
I
= V
IH
I
O
=
−4
mA, V
I
= V
IH
I
O
= 20
μA,
V
I
= V
IL
I
O
= 4 mA, V
I
= V
IL
PW
t
PHL
t
PLH
t
PHZ
t
PLZ
t
PZH
t
PZL
PWD
t
J
t
PSK
t
R
t
F
|CM
H
|,|CM
L
|
Power Frequency Magnetic Immunity
Pulse Magnetic Field Immunity
Damped Oscillatory Magnetic Field
Cross-axis Immunity Multiplier
(9)
Magnetic Field Immunity
(8)
(V
DD2
= 3V, 3V <V
DD1
<5.5V)
H
PF
1000
1500
H
PM
1800
2000
H
OSC
1800
2000
K
X
2.5
A/m
A/m
A/m
50Hz/60Hz
t
p
= 8µs
0.1Hz – 1MHz
4
NVE Corporation
11409 Valley View Road, Eden Prairie, MN 55344-3617
Phone: (952) 829-9217
Fax: (952) 829-9189
www.IsoLoop.com
©NVE Corporation
IL710
Parameters
Input Quiescent Supply Current
Output Quiescent Supply Current
Logic Input Current
Logic High Output Voltage
Logic Low Output Voltage
5 Volt Electrical Specifications
(T
min
to T
max
unless otherwise stated)
Symbol
Min.
Typ.
Max.
Units
I
DD1
10
15
μA
I
DD2
1.8
2.5
mA
I
I
−10
10
μA
V
DD
−0.1
V
DD
V
OH
V
0.8 x V
DD
0.9 x V
DD
0
0.1
V
OL
V
0.5
0.8
Switching Specifications
(V
DD
= 5 V)
100
130
10
110
150
7.5
10
10
3
3
3
3
2
0.3
4
1
1
30
50
200
340
15
15
5
5
5
5
3
3
6
3
3
Mbps
Mbps
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
kV/μs
μA/Mbps
C
L
= 15 pF
C
L
= 15 pF
50% Points, V
O
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
C
L
= 15 pF
V
CM
= 1500 V
DC
t
TRANSIENT
= 25 ns
Test Conditions
I
O
=
−20 μA,
V
I
= V
IH
I
O
=
−4
mA, V
I
= V
IH
I
O
= 20
μA,
V
I
= V
IL
I
O
= 4 mA, V
I
= V
IL
Maximum Data Rate
IL710 and IL710T
IL710S
Pulse Width
(7)
Propagation Delay Input to Output
(High to Low)
Propagation Delay Input to Output
(Low to High)
Propagation Delay Enable to Output
(High to High Impedance)
Propagation Delay Enable to Output
(Low to High Impedance)
Propagation Delay Enable to Output
(High Impedance to High)
Propagation Delay Enable to Output
(High Impedance to Low)
Pulse Width Distortion
(2)
IL710 and IL710T
IL710S
Propagation Delay Skew
(3)
Output Rise Time (10%–90%)
Output Fall Time (10%–90%)
Common Mode Transient Immunity
(Output Logic High or Logic Low)
(4)
Dynamic Power Consumption
(6)
PW
t
PHL
t
PLH
t
PHZ
t
PLZ
t
PZH
t
PZL
PWD
t
PSK
t
R
t
F
|CM
H
|,|CM
L
|
Power Frequency Magnetic Immunity
Pulse Magnetic Field Immunity
Damped Oscillatory Magnetic Field
Cross-axis Immunity Multiplier
(9)
Magnetic Field Immunity
(8)
(V
DD2
= 5V, 3V<V
DD1
<5.5V)
H
PF
2800
3500
H
PM
4000
4500
H
OSC
4000
4500
K
X
2.5
A/m
A/m
A/m
50Hz/60Hz
t
p
= 8µs
0.1Hz – 1MHz
Notes
(apply to both 3.3 V and 5 V specifications):
Absolute maximum ambient operating temperature means the device will not be damaged if operated under these conditions. It does not
guarantee performance.
2. PWD is defined as |t
PHL
−
t
PLH
|. %PWD is equal to PWD divided by pulse width.
3. t
PSK
is the magnitude of the worst-case difference in t
PHL
and/or t
PLH
between devices at 25°C.
4. CM
H
is the maximum common mode voltage slew rate that can be sustained while maintaining V
O
> 0.8 V
DD
2
. CM
L
is the maximum
common mode input voltage that can be sustained while maintaining V
O
< 0.8 V. The common mode voltage slew rates apply to both rising
and falling common mode voltage edges.
5. Device is considered a two terminal device: pins 1–4 shorted and pins 5–8 shorted.
6. Dynamic power consumption is calculated per channel and is supplied by the channel’s input side power supply.
7. Minimum pulse width is the minimum value at which specified PWD is guaranteed.
8. The relevant test and measurement methods are given in the Electromagnetic Compatibility section on p. 7.
9.
External magnetic field immunity is improved by this factor if the field direction is “end-to-end” rather than to “pin-to-pin” (see diagram on p. 7).
10. 66,535-bit pseudo-random binary signal (PRBS) NRZ bit pattern with no more than five consecutive 1s or 0s; 800 ps transition time.
5
NVE Corporation
11409 Valley View Road, Eden Prairie, MN 55344-3617
Phone: (952) 829-9217
Fax: (952) 829-9189
www.IsoLoop.com
©NVE Corporation
1.
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