VS-ST280CH Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 500 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AB (A-PUK)
• Extended temperature range
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
TO-200AB (A-PUK)
• DC motor controls
• Controlled DC power supplies
• AC controllers
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
TO-200AB (A-PUK)
Single SCR
500 A
400 V, 600 V
1.35 V
90 mA
-40 °C to 150 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
500
80
1130
25
7200
7500
260
230
400 to 600
100
-40 to 150
UNITS
A
°C
A
°C
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
06
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
400
600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
700
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
75
VS-ST280CH..C
Revision: 16-Dec-13
Document Number: 94401
1
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST280CH Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Maximum (typical) latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
500 (185)
80 (110)
1130
7200
7500
6000
Sinusoidal half wave,
initial T
J
= T
J
maximum
6300
260
235
180
165
2600
0.84
0.88
0.50
0.47
1.35
600
1000 (300)
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 1000 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
,
t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 300 A, T
J
= T
J
maximum, dI/dt = 20 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
,
t
p
= 500 μs
VALUES
1000
1.0
μs
100
UNITS
A/μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
75
UNIT
S
V/μs
mA
Revision: 16-Dec-13
Document Number: 94401
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST280CH Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, t
p
5 ms
T
J
= - 40 °C
DC gate current required to trigger
T
J
= 25 °C
T
J
= 150 °C
T
J
= - 40 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 150 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
180
90
30
2.9
1.8
1.0
10
VALUES
TYP.
MAX.
UNITS
10.0
2.0
3.0
20
5.0
-
150
-
-
3.0
-
W
A
V
mA
V
mA
0.30
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction and
storage temperature range
Maximum thermal resistance,
junction to heatsink
Maximum thermal resistance,
case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
, T
Stg
R
thJ-hs
R
thC-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
- 40 to 150
0.17
0.08
0.033
0.017
4900
(500)
50
N
(kg)
g
K/W
UNITS
°C
TO-200AB (A-PUK)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.016
0.019
0.024
0.035
0.060
DOUBLE SIDE
0.017
0.019
0.024
0.035
0.060
RECTANGULAR CONDUCTION
SINGLE SIDE
0.011
0.019
0.026
0.036
0.060
DOUBLE SIDE
0.011
0.019
0.026
0.037
0.061
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 16-Dec-13
Document Number: 94401
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST280CH Series
www.vishay.com
Vishay Semiconductors
150
140
130
120
110
100
90
80
70
60
50
40
30
20
150
140
Maximum Allowable
Heatsink Temperature (°C)
130
120
110
100
90
80
70
60
50
40
Maximum Allowable
Heatsink Temperature (°C)
ST280CH..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
ST280CH..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
Ø
Ø
Conduction angle
30°
60°
90°
120°
180°
0
100
200
300
400
500
Conduction period
30°
60°
90°
120°
180°
DC
0
200
400
600
800
1000
1200
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 4 - Current Ratings Characteristics
150
140
130
120
110
100
90
80
70
60
50
40
30
20
Maximum Allowable
Heatsink Temperature (°C)
Maximum Average
On-State Power Loss (W)
ST280CH..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
Ø
Conduction period
30°
60°
90°
120°
180°
0
100
200
300
400
500
600
DC
700
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
ST280CH..C Series
T
J
= 150 °C
0
100
200
300
400
500
600
700
800
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 5 - On-State Power Loss Characteristics
150
140
130
120
110
100
90
80
70
60
50
40
30
20
Maximum Allowable
Heatsink Temperature (°C)
Maximum Average
On-State Power Loss (W)
ST280CH..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
1800
1600
1400
1200
1000
800
600
400
200
0
Ø
DC
180°
120°
90°
60°
30°
Conduction angle
RMS limit
30°
60°
90°
120°
180°
Ø
Conduction period
ST280CH..C Series
T
J
= 150 °C
0
200
400
600
800
1000
1200
0
100
200
300
400
500
600
700
800
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 16-Dec-13
Document Number: 94401
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST280CH Series
www.vishay.com
Vishay Semiconductors
7500
7000
6500
6000
Peak Half Sine Wave
On-State Current (A)
5500
5000
4500
4000
3500
Peak Half Sine Wave
On-State Current (A)
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
6500
6000
5500
5000
4500
4000
3500
3000
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
ST280CH..C Series
3000
ST280CH..C Series
0.1
1
1
10
100
2500
0.01
Number Of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Instantaneous On-State Current (A)
10 000
T
J
= 150 °C
T
J
= 25 °C
1000
ST280CH..C Series
100
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
1
Z
thJ-hs
- Transient
Thermal Impedance (K/W)
Steady state value
R
thJ-hs
= 0.17 K/W
0.1
(Single side cooled)
R
thJ-hs
= 0.08 K/W
(Double side cooled)
(DC operation)
0.01
ST280CH..C Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Revision: 16-Dec-13
Document Number: 94401
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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