MMSTA42
SOT-323 Transistor (NPN)
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
Features
High breakdown voltage
Low collector-emitter saturation voltage
Complementary to MMSTA92(PNP)
MARKING:K3M
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
300
300
5
0.3
0.3
150
-55-150
Units
V
V
V
A
W
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
Test
conditions
MIN
300
300
5
0.25
0.1
60
100
75
0.2
0.9
50
V
V
MHz
200
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=200V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=10V,I
C
=1mA
V
CE
=10V,I
C
=10mA
V
CE
=10V,I
C
=30mA
I
C
=20mA,I
B
=2mA
I
C
=20mA,I
B
=2mA
V
CE
=20V,I
C
=10mA,f=30MHz
Revision:20170701-P1
ht
t
p
:
//
www.lgesem i
.c
o
m
mail:lge@lgesemi.com
MMSTA42
SOT-323 Transistor (NPN)
Revision:20170701-P1
ht
t
p
:
//
www.lgesem i
.c
o
m
mail:lge@lgesemi.com
MMSTA42
SOT-323 Transistor (NPN)
Revision:20170701-P1
ht
t
p
:
//
www.lgesem i
.c
o
m
mail:lge@lgesemi.com
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