TECHNICAL NOTE
HIGH GRADE Specification HIGH RELIABILITY series
Microwire BUS Serial EEPROMs
Supply voltage 1.8V~5.5V
Operating temperature –40°C~+85°C type
BR93L46-W, BR93L56-W, BR93L66-W, BR93L76-W, BR93L86-W
Description
BR93L
-W series is a serial EEPROM of serial 3-line interface method.
Features
3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared)
Actions available at high speed 2MHz clock (2.5 ~ 5.5V)
Speed write available (write time 5 ms max.)
Same package and pin layout from 1Kbit to 16Kbit
1.8 ~ 5.5V single power source action
Highly reliable connection by Au pad and Au wire
Address auto increment function at read action
Write mistake prevention function
Write prohibition at power on
Write prohibition by command code
Write mistake prevention function at low voltage
Program cycle auto delete and auto end function
Program condition display by READY / BUSY
Low current consumption
At write action (at 5V) : 1.2mA (Typ.)
At read action (at 5V) : 0.3mA (Typ.)
At standby action (at 5V) : 0.1µA (Typ.) (CMOS input)
TTL compatible input / output
Compact package SOP8, SOP-J8, SSOP-B8, TSSOP-B8, MSOP8, TSSOP-B8J
Data retention for 40 years
Data rewrite up to 1,000,000 times
Data at shipment all addresses FFFFh
BR93L Series
Capacity
1Kbit
2Kbit
4Kbit
8Kbit
16Kbit
Bit format
64
×
16
128
×
16
256
×
16
512
×
16
1K
×
16
Type
Package
type
BR93L46-W
BR93L56-W
BR93L66-W
BR93L76-W
BR93L86-W
1.8 ~ 5.5V
1.8 ~ 5.5V
1.8 ~ 5.5V
1.8 ~ 5.5V
1.8 ~ 5.5V
Power source voltage
SOP8
F
●
●
●
●
●
RF
●
●
●
●
●
SOP-J8
FJ
●
●
●
●
●
RFJ
●
●
●
●
●
SSOP-B8
FV
●
●
●
RFV
●
●
●
●
●
TSSOP-B8
FVT
●
●
●
RFVT
●
●
●
●
●
MSOP8
RFVM
●
●
●
●
●
TSSOP-B8J
RFVJ
●
●
●
●
●
Ver.B Oct.2005
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Impressed voltage
Symbol
V
CC
Limits
-0.3 ~ +6.5
SOP8 (F, RF)
SOP-J8 (FJ, RFJ)
Permissible dissipation
Pd
SSOP-B8 (FV, RFV)
TSSOP-B8 (FVT, RFVT)
MSOP8 (RFVM)
TSSOP-B8J (RFVJ)
Storage temperature range
Action temperature range
Terminal voltage
Tstg
Topr
-
-65 ~ +125
-40 ~ +85
-0.3 ~ V
CC
+0.3
Unit
V
Recommended action conditions
Parameter
Power source voltage
Input voltage
mW
Symbol
V
CC
V
IN
Limits
1.8 ~ 5.5
0 ~ V
CC
Unit
V
V
450
(*1)
450
(*2)
300
(*3)
330
(*4)
310
(*5)
310
(*6)
˚C
˚C
V
* When using at Ta = 25˚C or higher, 4.5mW (*1, *2), 3.0mW (*3), 3.3mW (*4),3.1mW (*5, *6)
to be reduced per 1˚C.
Electrical characteristics (Unless otherwise specified, Ta=-40 ~ +85˚C, Vcc=2.5 ~ 5.5V)
Parameter
Symbol
Min.
-0.3
-0.3
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
+0.8
0.2xV
CC
Unit
V
V
V
V
V
V
V
V
µA
µA
mA
mA
mA
µA
Conditions
"L" input voltage 1
"L" input voltage 2
"H" input voltage 1
"H" input voltage 2
"L" output voltage 1
"L" output voltage 2
"H" output voltage 1
"H" output voltage 2
Input leak current
Output leak current
Current consumption at
action
Standby current
Radiation resistance design is not made.
V
IL1
V
IL2
V
IH1
V
IH2
V
OL1
V
OL2
V
OH1
V
OH2
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
SB
4.0V≤V
CC
≤5.5V
V
CC
≤4.0V
4.0V≤V
CC
≤5.5V
V
CC
≤4.0V
I
OL
=2.1mA, 4.0V≤V
CC
≤5.5V
I
OL
=100µA
I
OH
=-0.4mA, 4.0V≤V
CC
≤5.5V
I
OH
=-100µA
V
IN
=0~V
CC
V
OUT
=0~V
CC
, CS=0V
f
SK
=2MHz, t
E/W
=5ms (WRITE)
f
SK
=2MHz (READ)
f
SK
=2MHz, t
E/W
=5ms (WRAL,ERAL)
CS=0V, DO=OPEN
2.0
0.7xV
CC
V
CC
+0.3
V
CC
+0.3
0.4
0.2
0
0
2.4
V
CC
-0.2
-1
-1
-
-
-
-
V
CC
V
CC
+1
+1
3.0
1.5
4.5
2
(Unless otherwise specified, Ta=-40 ~ +85˚C, Vcc=1.8 ~ 2.5V)
Parameter
Symbol
Min.
-0.3
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
Unit
V
V
V
V
µA
µA
mA
mA
mA
µA
Conditions
"L" input voltage
"H" input voltage
"L" output voltage
"H" output voltage
Input leak current
Output leak current
Current consumption at
action
Standby current
Radiation resistance design is not made.
V
IL
V
IH
V
OL
V
OH
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
SB
0.2xV
CC
V
CC
+0.3
0.2
0.7xV
CC
0
V
CC
-0.2
-1
-1
-
-
-
-
I
OL
=100µA
I
OH
=-100µA
V
IN
=0~V
CC
V
OUT
=0~V
CC
, CS=0V
f
SK
=500kHz, t
E/W
=5ms (WRITE)
f
SK
=500kHz (READ)
f
SK
=500kHz (WRAL,ERAL)
CS=0V, DO=OPEN
V
CC
+1
+1
1.5
0.5
2
2
Memory cell characteristics (Ta=25˚C, Vcc=1.8 ~ 5.5V)
Parameter
Min.
Typ.
-
-
Max.
-
-
Unit
Times
Years
Number of data rewrite times *1 1,000,000
Data hold years
*1
40
*1 Not 100% TESTED
2/16
Action timing characteristics (Ta=-40 ~ +85˚C, Vcc=2.5 ~ 5.5V)
Parameter
SK frequency
SK "H" time
SK "L" time
CS "L" time
CS setup time
DI setup time
CS hold time
DI hold time
Symbol
f
SK
t
SKH
t
SKL
t
CS
t
CSS
t
DIS
t
CSH
t
DIH
t
PD1
t
PD0
t
SV
t
DF
t
E/W
Min.
-
230
230
200
50
100
0
100
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
2
-
-
-
-
-
-
-
200
200
150
150
5
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
Data "1" output delay time
Data "0" output delay time
Time from CS to output establishment
Time from CS to High-Z
Write cycle time
(Ta=-40 ~ +85˚C, Vcc=1.8 ~ 2.5V)
Parameter
SK frequency
SK "H" time
SK "L" time
CS "L" time
CS setup time
DI setup time
CS hold time
DI hold time
Symbol
f
SK
t
SKH
t
SKL
t
CS
t
CSS
t
DIS
t
CSH
t
DIH
t
PD1
t
PD0
t
SV
t
DF
t
E/W
Min.
-
0.8
0.8
1
200
100
0
100
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
500
-
-
-
-
-
-
-
0.7
0.7
0.7
200
5
Unit
kHz
µs
µs
µs
ns
ns
ns
ns
µs
µs
µs
ns
ms
Data "1" output delay time
Data "0" output delay time
Time from CS to output establishment
Time from CS to High-Z
Write cycle time
Sync data input / output timing
CS
t
CSS
t
SKH
t
SKL
t
CSH
SK
t
DIS
DI
t
PD0
DO (READ)
t
DF
DO (WRITE)
t
PD1
t
DIH
STATUS VALID
Fig.1 Sync data input / output timing
Data is taken by DI in sync with the rise of SK.
At read action, data is output from DO in sync with the rise of SK.
The status signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area
DO where CS is "H", and valid until the next command start bit is input. And, while CS is "L", DO becomes High-Z.
After completion of each mode execution, set CS "L" once for internal circuit reset, and execute the following action
mode.
3/16
Characteristic data
6
H INPUT VOLTAGE : V
IH
(V)
6
L OUTPUT VOLTAGE : V
OL
(V)
1
0.8
Ta=85˚C
L INPUT VOLTAGE : V
IL
(V)
5
4
3
2
1
0
0
SPEC
5
4
3
2
1
SPEC
0.6
Ta=25˚C
Ta=85˚C
Ta=25˚C
Ta=-40˚C
0.4
SPEC
Ta=-40˚C
Ta=25˚C
Ta=85˚C
0.2
Ta=-40˚C
1
2
3
4
5
6
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
SUPPLY VOLTAGE : V
CC
(V)
SUPPLY VOLTAGE : V
CC
(V)
L OUTPUT CURRENT : I
OL
(mA)
Fig. 2
1
L OUTPUT VOLTAGE : V
OL
(V)
H input voltage V
IH
(CS,SK,DI)
Fig. 3
1
0.8
0.6
H input voltage V
IL
(CS,SK,DI)
Fig. 4
5
H OUTPUT VOLTAGE : V
OH
(V)
L output voltage V
OL
-I
OL
(V
CC
=1.8V)
0.8
0.6
0.4
SPEC
Ta=85˚C
L OUTPUT VOLTAGE : V
OL
(V)
4
3
SPEC
SPEC
Ta=25˚C
0.4
0.2
0
0
Ta=85˚C
Ta=25˚C
2
1
0
0
Ta=-40˚C
0.2
0
0
Ta=-40˚C
Ta=-40˚C
Ta=25˚C
Ta=85˚C
1
2
3
4
5
1
2
3
4
5
0.4
0.8
1.2
1.6
L OUTPUT CURRENT : I
OL
(mA)
L OUTPUT CURRENT : I
OL
(mA)
H OUTPUT CURRENT : I
OH
(mA)
Fig. 5
5
H OUTPUT VOLTAGE : V
OH
(V)
L output voltage V
OL
-I
OL
(V
CC
=2.5V)
Fig. 6
5
H OUTPUT VOLTAGE : V
OH
(V)
L output voltage V
OL
-I
OL
(V
CC
=4.0V)
Fig. 7
1.2
INPUT LEAK CURRENT : I
LI
(µA)
H output voltage V
OH
-I
OH
(V
CC
=1.8V)
SPEC
4
3
2
1
0
0
4
3
2
1
0
0
SPEC
Ta=-40˚C
Ta=25˚C
Ta=85˚C
1
0.8
0.6
0.4
0.2
0
0
Ta=85˚C
Ta=25˚C
Ta=-40˚C
SPEC
Ta=-40˚C
Ta=25˚C
Ta=85˚C
0.4
0.8
1.2
1.6
0.4
0.8
1.2
1.6
1
2
3
4
5
6
H OUTPUT CURRENT : I
OH
(mA)
H OUTPUT CURRENT : I
OH
(mA)
Fig. 8
1.2
OUTPUT LEAK CURRENT : I
LO
(µA)
H output voltage V
OH
-I
OH
(V
CC
=2.5V)
SPEC
Fig. 9
5
CURRENT CONSUMPTION
AT WRITING : I
CC
1
(WRITE) (mA)
SUPPLY VOLTAGE : V
CC
(V)
H output voltage V
OH
-I
OH
(V
CC
=4.0V)
Fig. 10
2.5
CURRENT CONSUMPTION
AT READING : I
CC
2
(READ) (mA)
Input leak current I
LI
(CS,SK,DI)
1
0.8
0.6
0.4
0.2
0
0
Ta=85˚C
Ta=25˚C
Ta=-40˚C
4
3
2
1
0
0
f
SK
=2MHz
DATA=0000h
2
1.5
1
0.5
0
0
f
SK
=2MHz
DATA=0000h
SPEC
SPEC
Ta=85˚C
Ta=25˚C
Ta=-40˚C
Ta=85˚C
Ta=25˚C
Ta=-40˚C
1
2
3
4
5
6
1
2
3
4
5
6
1
2
3
4
5
6
Fig. 11
5
CURRENT CONSUMPTION
AT OPERATING : I
CC
3
(WRAL) (mA)
SUPPLY VOLTAGE : V
CC
(V)
Output leak current I
LO
(DO)
Fig. 12
5
SUPPLY VOLTAGE : V
CC
(V)
Current consumption at WRITE action
I
CC
1(WRITE,f
SK
=2MHz)
Fig. 13
2.5
CURRENT CONSUMPTION
AT READING : I
CC
2
(READ) (mA)
SUPPLY VOLTAGE : V
CC
(V)
Consumption current at READ action
I
CC
2(READ,f
SK
=2MHz)
4
3
2
1
0
0
SPEC
CURRENT CONSUMPTION
AT WRITING : I
CC
1
(WRITE) (mA)
f
SK
=2MHz
DATA=0000h
4
3
2
1
0
0
f
SK
=500kHz
DATA=0000h
2
1.5
1
0.5
0
0
f
SK
=500kHz
DATA=0000h
SPEC
SPEC
Ta=85
˚C
Ta=25
˚C
Ta=-40
˚C
SPEC
Ta=85
˚
C
Ta=25
˚C
Ta=-40
˚C
SPEC
Ta=85
˚
C
Ta=25
˚
C
Ta=-40
˚
C
1
2
3
4
5
6
1
2
3
4
5
6
1
2
3
4
5
6
Fig. 14
SUPPLY VOLTAGE : V
CC
(V)
Consumption current at WRAL action
I
CC
3(WRAL,f
SK
=2MHz)
Fig. 15
SUPPLY VOLTAGE : V
CC
(V)
Current consumption at WRITE action
I
CC
1(WRITE,f
SK
=500kHz)
Fig. 16
SUPPLY VOLTAGE : V
CC
(V)
Consumption current at READ action
I
CC
2(READ,f
SK
=500kHz)
4/16
5
CURRENT CONSUMPTION
AT OPERATING : I
CC
3
(WRAL) (mA)
2.5
SPEC
100
SPEC
Ta=-40˚C
STAND BY CURRENT : I
SB
(µA)
SK FREQUENCY : f
SK
(MHz)
4
3
2
1
0
0
f
SK
=500kHz
DATA=0000h
2
1.5
1
0.5
Ta=85˚C
Ta=25˚C
Ta=-40˚C
10
Ta=25˚C
Ta=85˚C
SPEC
Ta=85˚C
Ta=25˚C
Ta=-40˚C
1
SPEC
0.1
SPEC
1
2
3
4
5
6
0
0
1
2
3
4
5
6
0.01
0
1
2
3
4
5
6
Fig. 17
1
0.8
H SK TIME : t
SKH
(µs)
SUPPLY VOLTAGE : V
CC
(V)
SUPPLY VOLTAGE : V
CC
(V)
SUPPLY VOLTAGE : V
CC
(V)
Consumption current at WRAL action
I
CC
3(WRAL,f
SK
=500kHz)
Fig. 18
1
Consumption current at standby action
I
SB
1.2
Fig. 19
SK frequency
f
SK
SPEC
SPEC
0.8
L SK TIME : t
SKL
(µs)
SPEC
1
L CS TIME : t
CS
(µs)
0.8
0.6
0.4
0.2
0
0
Ta=-40˚C
Ta=25˚C
Ta=85˚C
SPEC
0.6
0.4
SPEC
0.6
0.4
SPEC
0.2
0
0
Ta=-40˚C
Ta=25˚C
Ta=85˚C
0.2
0
0
Ta=-40˚C
Ta=25˚C
Ta=85˚C
1
2
3
4
5
6
1
2
3
4
5
6
1
2
3
4
5
6
Fig. 20
50
SUPPLY VOLTAGE : V
CC
(V)
SK high time
t
SKH
300
SPEC
Fig. 21
SUPPLY VOLTAGE : V
CC
(V)
SK low time
t
SKL
150
Fig. 22
SUPPLY VOLTAGE : V
CC
(V)
CS low time
t
CS
SPEC
CS SETUP TIME : t
CSS
(ns)
CS HOLD TIME : t
CSH
(ns)
-50
-100
-150
-200
0
100
0
-100
-200
0
SPEC
DI HOLD TIME : t
DIH
(ns)
0
200
SPEC
100
Ta=-40˚C
Ta=25˚C
50
Ta=-40˚C
Ta=85˚C
Ta=25˚C
0
Ta=85˚C
Ta=25˚C
Ta=-40˚C
Ta=85˚C
1
2
3
4
5
6
1
2
3
4
5
6
-50
0
1
2
3
4
5
6
SUPPLY VOLTAGE : V
CC
(V)
SUPPLY VOLTAGE : V
CC
(V)
SUPPLY VOLTAGE : V
CC
(V)
Fig. 23
150
CS hold time
t
CSH
DATA "0" OUTPUT DELAY TIME : t
PD0
(µs)
Fig. 24
1
0.8
0.6
0.4
CS setup time
t
CSS
DATA "1" OUTPUT DELAY TIME : t
PD1
(µs)
Fig. 25
1
0.8
0.6
0.4
DI hold time
t
DIH
DI SETUP TIME : t
DIS
(ns)
SPEC
100
SPEC
SPEC
50
Ta=-40˚C
Ta=25˚C
Ta=85˚C
Ta=85˚C
Ta=25˚C
SPEC
0
Ta=85˚C
0.2
0
0
Ta=25˚C
SPEC
0.2
Ta=-40˚C
Ta=-40˚C
-50
0
1
2
3
4
5
6
1
2
3
4
5
6
0
0
1
2
3
4
5
6
SUPPLY VOLTAGE : V
CC
(V)
SUPPLY VOLTAGE : V
CC
(V)
SUPPLY VOLTAGE : V
CC
(V)
Fig. 26
TIME BETWEEN CS AND OUTPUT : t
SV
(µs)
DI setup time
t
DIS
Fig. 27
250
Data "0" output delay time
t
PD0
Fig. 28
6
WRITE CYCLE TIME : t
E/W
(ms)
Output data "1" delay time
t
PD1
1
0.8
0.6
0.4
0.2
0
0
Ta=85˚C
Ta=25˚C
Ta=-40˚C
SPEC
SPEC
SPEC
SPEC
TIME BETWEEN CS AND
OUTPUT HIGH-Z : t
DF
(ns)
200
SPEC
5
4
3
2
1
0
0
Ta=85˚C
Ta=-40˚C
150
Ta=85˚C
100
Ta=25˚C
Ta=25˚C
50
Ta=-40˚C
1
2
3
4
5
6
0
0
1
2
3
4
5
6
1
2
3
4
5
6
SUPPLY VOLTAGE : V
CC
(V)
SUPPLY VOLTAGE : V
CC
(V)
SUPPLY VOLTAGE : V
CC
(V)
Fig. 29
Time from CS to output establishment
t
SV
Fig. 30
Time from CS to High-Z
t
DF
Fig. 31
Write cycle time
t
E/W
5/16
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