电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

TS4B06GD2G

产品描述Bridge Rectifier Diode, 1 Phase, 4A, 800V V(RRM), Silicon, GREEN, PLASTIC, TS4B, 4 PIN
产品类别分立半导体    二极管   
文件大小212KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

TS4B06GD2G概述

Bridge Rectifier Diode, 1 Phase, 4A, 800V V(RRM), Silicon, GREEN, PLASTIC, TS4B, 4 PIN

TS4B06GD2G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明R-PSFM-T4
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性UL RECOGNIZED
最小击穿电压800 V
外壳连接ISOLATED
配置BRIDGE, 4 ELEMENTS
二极管元件材料SILICON
二极管类型BRIDGE RECTIFIER DIODE
JESD-30 代码R-PSFM-T4
JESD-609代码e3
最大非重复峰值正向电流120 A
元件数量4
相数1
端子数量4
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流4 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压800 V
表面贴装NO
端子面层MATTE TIN
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED

TS4B06GD2G文档预览

TS4B01G thru TS4B07G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- High case dielectric strength of 2000VRMS
- Reliable low cost construction
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
TS4B
MECHANICAL DATA
Case:
TS4B
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Polarity as marked on the body
Mounting torque:
5 in-lbs maximum
Weight:
4 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@2A
@4A
Maximum DC reverse current
at rated DC blocking voltage
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
TS4B
01G
50
35
50
TS4B
02G
100
70
100
TS4B
03G
200
140
200
TS4B
04G
400
280
400
4
120
60
1.0
1.1
5
500
5.5
- 55 to +150
- 55 to +150
O
TS4B
05G
600
420
600
TS4B
06G
800
560
800
TS4B
07G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
I
R
R
θJC
T
J
T
STG
μA
C/W
O
O
C
C
Document Number: DS_D1311042
Version: F13
TS4B01G thru TS4B07G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
C2
X0
D2
Suffix "G"
GREEN COMPOUND
CODE
TS4B0xG
(Note 1)
TS4B
TS4B
TS4B
20 / TUBE
Forming
20 / TUBE
PACKAGE
PACKING
Note 1: "x" defines voltage from 50V (TS4B01G) to 1000V (TS4B07G)
EXAMPLE
PREFERRED P/N
TS4B01G C2
TS4B01G C2G
PART NO.
TS4B01G
TS4B01G
PACKING CODE
C2
C2
G
Green compound
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1- MAXIMUM FORWARD CURRENT
DERATING CURVE
5
4
3
2
1
0
0
50
100
150
CASE TEMPERATURE (
o
C)
INSTANTANEOUS REVERSE CURRENT (μA)
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
100
TJ=100℃
AVERAGE FORWARD
A
CURRENT (A)
10
1
TJ=25℃
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
175
PEAK FORWARD SURGE CURRENT (A)
150
125
100
75
50
25
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine Wave
JEDEC Method
10
FIG. 4- TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT (A)
1
0.1
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
INSTANTANEOUS FORWARD VOLTAGE (V)
Document Number: DS_D1311042
Version: F13
TS4B01G thru TS4B07G
Taiwan Semiconductor
FIG. 5- TYPICAL JUNCTION CAPACITANCE
1000
J UNCTION CAPACITANCE (pF)
A
900
800
700
600
500
400
300
200
100
0
0.1
1
10
100
1000
REVERSE VOLTAGE (V)
f=1.0MHz
Vsig=50mVp-p
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
24.70
0.90
1.80
14.70
3.96
17.00
7.30
3.30
3.10
9.30
1.52
0.55
Max
25.30
1.10
2.20
15.30
4.37
18.00
7.70
3.70
3.40
9.70
1.73
0.75
Unit (inch)
Min
0.972
0.035
0.071
0.579
0.156
0.669
0.287
0.130
0.122
0.366
0.060
0.022
Max
0.996
0.043
0.087
0.602
0.172
0.709
0.303
0.146
0.134
0.382
0.068
0.030
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1311042
Version: F13
TS4B01G thru TS4B07G
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1311042
Version: F13
求PIC16F76中文资料
求PIC16F76中文资料,那位兄台有没,支援下.多谢.......
benraul Microchip MCU
磁力管道切割机 CG2-11原理图
磁力管道切割机 CG2-11原理图...
zaq11968 工业自动化与控制
MSFLASH驱动的问题
我的平台是PXA270+Wince6.0,64M Intel P30 NOR Flash 为了替代wince5.0下的IPSM软件,我现在想使用MSFALH来将flash剩余容量利用起来,遇到了一些问题,也有一些疑问,请大家帮忙一下。 现在 ......
sinoxia 机器人开发
ADI实验室电路新版主damiaa 闪亮登场
欢迎damiaa加入版主行列!!! damiaa我想也是大家的老朋友了,在我们的坛子里也参加了不少活动。尤其是在富士通开发板DIY中积极参与活动讨论,对原理图改进提出了几条好的建议,比如舍弃老型 ......
苏莎莎 ADI 工业技术
IAR for 78K
我想问两个问题一下, 1)我在用IAR的时候汇编与C混合时,包含了一个C中的IO口头文件,我如果在汇编中控制IO口要怎么弄? 2)在IAR中为什么有很多NEC单片机的汇编不支持?编译的时候提示错误 ......
jerryhehe 嵌入式系统
新人学生单片机程序求教
是一道交流电压相位检测的小题目 相位检测的我没什么特别好的思路 目前想到的就是先测有效值,乘根号2得最大值,然后用采到的电压值除以最大值,得到Umsinφ/Umsin90°=sinφ 再查sin^-1的表 ......
bad-attitude 51单片机

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2276  279  389  1351  2449  41  38  14  8  58 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved