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NDL3220S

产品描述670 nm, LASER DIODE
产品类别光电子/LED    光电   
文件大小27KB,共4页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
下载文档 详细参数 选型对比 全文预览

NDL3220S概述

670 nm, LASER DIODE

NDL3220S规格参数

参数名称属性值
是否无铅含铅
厂商名称Renesas(瑞萨电子)
Reach Compliance Codecompliant
最大正向电流0.04 A
最大正向电压2.3 V
安装特点THROUGH HOLE MOUNT
最高工作温度60 °C
最低工作温度-10 °C
光电设备类型LASER DIODE
峰值波长670 nm
表面贴装NO

NDL3220S文档预览

5 mW, 670 nm VISIBLE LASER DIODE NDL3220S
FEATURES
OPTICAL OUTPUT POWER:
P
O
= 5.0 mW
LOW THRESHOLD CURRENT:
I
TH
= 20 mA TYP
LOW OPERATING CURRENT:
I
OP
= 30 mA TYP
LOW OPERATING VOLTAGE:
V
OP
= 2.1 V TYP
• WIDE OPERATING TEMPERATURE RANGE:
T
C
= -10 to +60 ˚C
PEAK EMISSION WAVELENGTH:
λ
p
= 670 nm TYP
• FUNDAMENTAL TRANSVERSE MODE
OUTLINE DIMENSIONS
(Units in mm)
0.4±0.1
110˚±1.5˚
1.0±0.15
Y
0.4±0.1
+0
φ5.6
-0.025
X
Chip Location
| X|, | Y|
0.1
| Z|
0.1
|
θ
II
|, |
θ
|
3 (Case)
PD
1
LD Chip
0.25
0.75 MAX
2
LD
Kovar Glass
1.27
φ4.4
φ3.55
φ1.0
z
2.3±0.3
Pin Connections
1. PD Anode
2. LD Cathode
3. Case Ground
APPLICATIONS
• BAR CODE READERS
• LASER POINTERS
• MEASURING INSTRUMENTS
1.2±0.1
6.5±0.5
φ2.0±0.2
1
3
2
3—φ0.45
DESCRIPTION
The NDL3220S is a 670 nm visible laser diode developed for
application systems where visible light output is necessary. It
expands the application range of your system by employing
the AlGaInP MQW structure to enable low current operation
over a wide operating temperature range.
ELECTRICAL CHARACTERISTICS
(T
C
= 25˚C)
PART NUMBER
SYMBOLS
V
OP
I
TH
I
OP
I
M
λ
p
θ
θ
II
Note:
1. FAHM: Full Angle at Half Maximum.
PARAMETERS AND CONDITIONS
Operating Voltage, P
O
= 5.0 mW
Threshold Current, CW
Operating Current, P
O
= 5.0 mW
Monitor Current, P
O
= 5.0 mW
Peak Emission Wavelength, P
O
= 5.0 mW
Vertical Beam Angle, P
O
= 5.0 mW, FAHM
1
Lateral Beam Angle, P
O
= 5.0 mW, FAHM
1
UNITS
V
mA
mA
mA
nm
deg.
deg.
0.1
660
25
6
MIN
NDL3220S
TYP
2.1
20
30
0.3
670
30
8
MAX
2.3
30
40
0.5
680
35
10
California Eastern Laboratories
NDL3220S
ABSOLUTE MAXIMUM RATINGS
1
(T
C
= 25˚C, unless otherwise specified)
SYMBOLS
P
O
V
R
I
F
V
R
T
C
T
STG
PARAMETERS
Optical Output Power
Reverse Voltage of LD
Forward Current of PD
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
UNITS
mW
V
mA
V
˚C
˚C
RATINGS
6.0
2.0
20
30
-10 to +60
-40 to +85
RECOMMENDED
OPERATING CONDITIONS
(T
C
= 25˚C)
SYMBOL
P
O
PARAMETER
Optical Output Power
UNIT
mW
MIN
TYP MAX
5.0
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES
(T
C
= 25˚C unless otherwise specified)
OPTICAL OUTPUT POWER
vs. FORWARD CURRENT
6
FORWARD CURRENT
vs. FORWARD VOLTAGE
60
CW
Optical Output Power, P
O
(mW)
Forward Current, I
F
(mA)
T
C
= 60˚C
T
C
= 30˚C
4
T
C
= 25˚C
T
C
= 0˚C
T
C
= -10˚C
2
T
C
= 40˚C
T
C
= 50˚C
T
C
= 60˚C
25˚C
30
-10˚C
0
0
10
20
30
40
50
0
0
1.0
2.0
3.0
Forward Current, I
F
(mA)
Forward Voltage, V
F
(V)
Relative Threshold Current I
THO
/I
THO
(T
C
= 25˚C)
RELATIVE THRESHOLD CURRENT
vs. CASE TEMPERATURE
5.0
CW
0.30
MONITOR CURRENT
vs. OPTICAL OUTPUT POWER
V
R
= 5 V
Monitor Current, I
M
(mA)
3.0
0.25
2.0
0.20
0.15
1.0
0.7
0.5
0.10
0.05
0.3
-10
0
10
20
30
40
50
60
0
1
2
3
4
5
Case Temperature, T
C
(˚C)
Optical Output Power, P
O
(mW)
NDL3220S
TYPICAL PERFORMANCE CURVES
(T
C
= 25˚C unless otherwise specified)
FAR FIELD PATTERN
1.0
P
O
= 5.0 mW
CURRENT WAVELENGTH
vs. CASE TEMPERATURE
690
CW
P
O
= 5.0 mW
0.8
θ
0.6
θ
II
0.4
Peak Wavelength,
λ
p
(nm)
20
40
Relative Intensity
680
670
0.2
0
-40
-20
0
660
-10
0
10
20
30
40
50
60
Beam Angle
θ
(deg.)
Case Temperature, T
C
(˚C)
TEMPERATURE DEPENDENCE OF OPTICAL CHARACTERISTICS
VERTICAL BEAM ANGLE
vs. CASE TEMPERATURE
34
P
O
= 5.0 mW
10
P
O
= 5.0 mW
LATERAL BEAM ANGLE
vs. CASE TEMPERATURE
Vertical Beam Angle,
θ
I
(deg.)
Lateral Beam Angle,
θ
I|
(deg.)
32
9
30
8
28
7
26
6
24
25
30
35
40
45
50
55
60
5
25
30
35
40
45
50
55
60
Case Temperature, T
C
(˚C)
Case Temperature, T
C
(˚C)
ASPECT RATIO
vs. CASE TEMPERATURE
6
P
O
= 5.0 mW
5
Aspect Ratio, AR
4
3
2
1
25
30
35
40
45
50
55
60
Case Temperature, T
C
(˚C)
NDL3220S
TEMPERATURE DEPENDENCE OF OPTICAL CHARACTERISTICS
POWER DEPENDENCE OF LONGITUDINAL MODE
CW
T
C
= 25˚C
P
O
= 5.0 mW
Relative Intensity
P
O
= 3.0 mW
P
O
= 1.0 mW
668
670
Wavelength
λ
p
(nm)
672
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
9/99
DATA SUBJECT TO CHANGE WITHOUT NOTICE

NDL3220S相似产品对比

NDL3220S
描述 670 nm, LASER DIODE
是否无铅 含铅
厂商名称 Renesas(瑞萨电子)
Reach Compliance Code compliant
最大正向电流 0.04 A
最大正向电压 2.3 V
安装特点 THROUGH HOLE MOUNT
最高工作温度 60 °C
最低工作温度 -10 °C
光电设备类型 LASER DIODE
峰值波长 670 nm
表面贴装 NO

 
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