®
DDR4 Temperature Sensor with
Integrated 4Kbit EEPROM for
Memory Modules
Features
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TSE2004GB2B0
Datasheet
Description
The TSE2004GB2B0 digital temperature sensor with accuracy up to
±0.5°C was designed to target applications demanding highest level of
temperature readout. The device also contains 512 Byte EEPROM for
storage of vendor information and system configuration such as SPD for
DIMM modules. The sensor and the EEPROM are fully compliant with
JEDEC JC42.4 Component Specification.
The digital temperature sensor comes with several user-programmable
registers to provide maximum flexibility for temperature-sensing
applications. The registers allow specifying critical, upper, and lower
temperature limits as well as hysteresis settings. Both the limits and
hysteresis values are used for communicating temperature events from
the chip to the system. This communication is done using Event pin,
which has an open-drain configuration. The user has the option of setting
the Event pin polarity as either an active-low or active-high comparator
output for thermostat operation, or as a temperature event interrupt
output for microprocessor-based systems.
The sensor uses an industry standard 2-wire, I
2
C/SMBus serial
interface, and allows up to eight devices to be controlled on the bus.
The 4Kbit (512 Bytes) serial EEPROM memory in the part is organized
as two pages of 256 bytes each, or 512 bytes of total memory. Each page
is comprised of two 128 byte blocks. The devices are able to selectively
lock the data in any or all of the four 128-byte blocks.
Compliant to the JEDEC TSE2004av Device Specification
(JEDEC standard No. 21-C Section 4.1.6)
Temperature Sensor + 512 Byte Serial EEPROM
512 Byte Serial EEPROM for SPD
Single Supply: 2.2V to 3.6V
Accurate timeout support
- Meets strict SMBus spec of 25ms (min), 35ms (max)
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Timeout supported for Temp Sensor and EEPROM
Timeout supported in all Modes
– Active mode for Temp sensor and EEPROM
– EEPROM in standby or Temp sensor in shutdown
– EEPROM in standby and Temp sensor in shutdown
Schmitt trigger and noise filtering on bus inputs
2-wire Serial Interface: 10KHz to 1 MHz max I
2
C™ /SMBus™
Available package: 8-DFN, 2.0
3.0
0.75 mm
Temperature Sensor Features
Temperature Converted to Digital Data
Sampling Rate of 125ms (max)
Selectable 0, 1.5°C, 3°C, 6°C Hysteresis
Programmable Resolution from 0.0625°C to 0.5°C
Accuracy:
– ±0.5°C/ ±1.0°C (typ/max) from +75°C to +95°C
– ±1.0°C/±2.0°C (typ/max) from +40°C to +125°C
– ±2.0°C/ ±3.0°C (typ/max) from -40°C to +125°C
Memory Module Temp Sensor Application
Memory
Module
Serial EEPROM Features
CPU
DRAMs
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(for memory
throttling)
EVENT#
Chipset
SMBus
Temperature
sensor and
EEPROM
Individual Reversible Software Data Protection for all 128 Byte
Blocks
Byte and page (up to 16 Bytes) Write Operation
Self-time Write cycle
Automatic address incrementing
Random and Sequential Read modes
Typical Applications
MCH
Memory
Bus
DRAMs
DIMM Modules (DDR3, DDR4)
Servers, Laptops, Ultra-portables, PCs, etc.
Industrial temperature monitors
Hard Disk Drives and Other PC Peripherals
1
May 9, 2018
Block Diagram: Temperature Sensor with EEPROM
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May 9, 2018
Maximum Ratings
Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. These are stress
ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not
implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
Symbol
T
STG
V
IO
V
DDSPD
Parameter
Storage Temperature
Input or output range, SA0
Input or output range, other pins
Supply Voltage
Min.
-65
-0.50
-0.50
-0.5
Max.
150
10
4.3
4.3
Units
C
V
V
V
DC and AC Parameters
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC
and AC Characteristic tables that follow are derived from tests performed under the Measurement Conditions summarized in the relevant tables.
Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters. DC
Characteristics
Operating Conditions
Symbol
V
DDSPD
T
A
Parameter
Supply Voltage
Ambient operating temperature
Min.
2.2
-40
Max.
3.6
+125
Units
V
C
©2018 Integrated Device Technology, Inc.
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May 9, 2018
AC Measurement Conditions
Symbol
C
L
Parameter
Load capacitance
Input rise and fall times
Input levels
Input and output timing reference levels
Min.
100
Max.
50
Units
pF
ns
V
V
0.2*V
DDSPD
to 0.8*V
DDSPD
0.3*V
DDSPD
to 0.7*V
DDSPD
AC Measurement I/O Waveform
Input Parameters for the TSE2004GB2B0
Symbol
C
IN
C
IN
Z
EIL
Z
EIH
t
SP
Parameter
1,2
Input capacitance (SDA)
Input rise and fall times
Ei (SA0,SA1,SA2) input impedance
Ei (SA0,SA1,SA2) input impedance
Pulse width ignored (input filter on
SCL and SDA)
Test Condition
Min.
Max.
8
6
Units
pF
ns
k
k
V
IN
< 0.3* V
DDSPD
V
IN
> 0.7* V
DDSPD
Single glitch, f < 100 KHz
Single glitch, f> 100 KHz
30
800
100
50
ns
1.T
A
=25°C, f=400 kHz
2.Verified by design and characterization not necessarily tested on all devices
©2018 Integrated Device Technology, Inc.
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May 9, 2018
DC Characteristics
Parameter
I
LI
I
LO
I
DD
Input leakage current
(SCL, SDA)
Output leakage
current
Supply current
f
<
400KHz
f > 400 KHz
Min
--
--
--
--
--
-0.5
0.7 *
V
DDSPD
7
--
Max
±5
±5
2
100
100
0.3 *
V
DDSPD
V
DDSPD
+ 0.5
10
0.4
Units
Conditions
V
IN
= V
SSSPD
or
V
DDSPD
V
OUT
= V
SSSPD
or
V
DDSPD
, SDA in Hi-Z
V
DDSPD
= 3.3 V, f
C
= 100
kHz (rise/fall time < 30 ns)
V
IN
= V
SSSPD or
V
DDSPD
,
V
DDSPD
= 3.6 V
V
IN
= V
SSSPD or
V
DDSPD
,
V
DDSPD
= 2.2V
--
--
V
HV
- V
DDSPD
>
4.8 V
3 mA sink current,
V
DDSPD
> 2 V
Min
--
--
--
--
--
-0.5
0.7 *
V
DDSPD
7
--
Max
±5
±5
2
100
100
0.3 *
V
DDSPD
V
DDSPD
+ 0.5
10
0.4
A
A
mA
A
A
V
V
V
V
I
DD1
Standby Supply
current
Input low voltage
(SCL, SDA)
Input high voltage
(SCL, SDA)
SA0 high voltage
Output low voltage
V
IL
V
IH
V
HV
V
OL1
IOL
V
HYST
V
PON
open-drain or
open-collector
LOW-level output
current
1
VOL = 0.4 V
VOL = 0.6 V
V
D D SP D
>
2 V
Monotonic rise between
V
PON
and V
DDSPD
(min)
without ringback
No ringback above V
POFF
3
6
0.05 *
V
DDSPD
1.6
20
--
0.05 *
V
DDSPD
1.6
mA
mA
--
--
V
V
Input hysteresis
Power On Reset
threshold
Power Off threshold
for warm power on
cycle
--
--
V
POFF
--
0.9
--
0.9
V
Notes:
1.
In order to drive full bus load at 400 KHz, 6 mA I
OL
is required at 0.6 V V
OL
. Parts not meeting this specification can still function, but not
at 400 KHz and 400 pF.
©2018 Integrated Device Technology, Inc.
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May 9, 2018
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