SFH640
5.3 kV TRIOS
High BV
CER
Voltage
Phototransistor Optocoupler
FEATURES
• CTR at
I
F
=10 mA,
V
CE
=10 V
SFH640-1, 40-80%
SFH640-2, 63-125%
SFH640-3*, 100-200%
• Good CTR Linearity with Forward Current
• Low CTR Degradation
• Very High Collector-emitter Breakdown
Voltage, BV
CER
=300 V
• Isolation Test Voltage: 5300 V
RMS
• Low Coupling Capacitance
• High Common Mode Transient Immunity
• Phototransistor Optocoupler
6 Pin DIP Package with Base Connection
• Field Effect Stable by TRIOS
(TRansparent IOn Shield)
V
•
VDE 0884 Available with Option 1
• Underwriters Lab File #E52744
D E
Dimensions in inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
NC 3
4
Emitter
2
1
pin one ID
Anode 1
Cathode 2
6
5
Base
Collector
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
DESCRIPTION
The SFH 640 is an optocoupler with very high
BVCER, a minimum of 300 volts. It is intended for
telecommunications applications or any DC appli-
cation requiring a high blocking voltage. The
SFH640 is a “better than” replacement for H11D1.
*Supplies from this group can't always be guaran-
teed due to unforeseeable yield spread.
Maximum Ratings
(
T
A
=25
°
C)
Emitter
Reverse Voltage................................................................................. 6.0 V
DC Forward Current......................................................................... 60 mA
Surge Forward Current (t
P
≤
10
µ
s) .................................................... 2.5 A
Total Power Dissipation................................................................ 100 mW
Detector
Collector-emitter Voltage ................................................................. 300 V
Collector-base Voltage...................................................................... 300 V
Emitter-base Voltage ......................................................................... 7.0 V
Collector Current............................................................................. 50 mA
Surge Collector Current (t
P
≤
1.0 ms) .............................................. 100 mA
Total Power Dissipation................................................................ 300 mW
Package
Isolation Test Voltage (between emitter and
detector, refer to climate DIN 40046 part 2
Nov. 74) .................................................................5300 V
RMS
/7500 V
PK
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ..................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C ................................................................
≥
10
11
Ω
Insulation Thickness between Emitter and Detector ...................
≥
0.4 mm
Creepage.....................................................................................
≥
7.0 mm
Clearance ....................................................................................
≥
7.0 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part1 ....................................................175
Storage Temperature Range........................................... –55
°
C to +150
°
C
Operating Temperature Range ....................................... –55
°
C to +100
°
C
Junction Temperature .......................................................................100
°
C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm)...............................................260
°
C
Document Number: 83682
Revision 17-August-01
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