PD - 95394A
DIGITAL AUDIO MOSFET
Features
Advanced Process Technology
l
Key Parameters Optimized for Class-D Audio
Amplifier Applications
l
Low R
DSON
for Improved Efficiency
l
Low Q
g
and Q
sw
for Better THD and Improved
Efficiency
l
Low Q
rr
for Better THD and Lower EMI
l
175°C Operating Junction Temperature for
Ruggedness
l
Repetitive Avalanche Capability for Robustness and
Reliability
l
Multiple Package Options
l
Lead-Free
l
IRLR4343PbF
IRLU4343PbF
IRLU4343-701PbF
Key Parameters
55
42
57
28
175
V
m
:
m
:
nC
°C
V
DS
R
DS(ON)
typ. @ V
GS
= 10V
R
DS(ON)
typ. @ V
GS
= 4.5V
Q
g
typ.
T
J
max
D
G
S
I-Pak
IRLU4343
I-Pak Leadform 701
IRLU4343-701
Refer to page 10 for package outline
D-Pak
IRLR4343
Description
This Digital Audio HEXFET
®
is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Max.
55
±20
26
19
80
79
39
0.53
-40 to + 175
–––
Units
V
A
c
W
W/°C
°C
N
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Clamping Pressure
h
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
g
Parameter
Typ.
Max.
1.9
50
110
Units
°C/W
Junction-to-Ambient (PCB Mounted)
Junction-to-Ambient (free air)
g
gj
–––
–––
–––
Notes
through
are on page 10
Document Number: 91340
12/8/04
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1
IRLR/U4343PbF & IRLU4343-701PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
g
fs
Q
g
Q
gs
Q
gd
Q
godr
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
L
D
L
S
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Min.
55
–––
–––
–––
1.0
–––
–––
–––
–––
–––
8.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
15
42
57
–––
-4.4
–––
–––
–––
–––
–––
28
3.5
9.5
15
5.7
19
23
5.3
740
150
59
250
4.5
7.5
–––
–––
50
65
–––
–––
2.0
25
100
-100
–––
42
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nH
–––
ns
Conditions
V V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 4.7A
V
GS
= 4.5V, I
D
= 3.8A
e
e
V
V
DS
= V
GS
, I
D
= 250µA
mV/°C
µA V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
nA
S
V
GS
= 20V
V
GS
= -20V
V
DS
= 25V, I
D
= 19A
V
DS
= 44V
V
GS
= 10V
I
D
= 19A
See Fig. 6 and 19
V
DD
= 28V, V
GS
= 10V
I
D
= 19A
R
G
= 2.5Ω
V
GS
= 0V
pF
V
DS
= 50V
ƒ = 1.0MHz,
See Fig.5
V
GS
= 0V, V
DS
= 0V to -44V
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
Ãe
D
f
Units
mJ
A
mJ
S
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Ãi
d
Typ.
Max.
–––
160
i
Min.
–––
–––
–––
–––
–––
See Fig. 14, 15, 17a, 17b
Diode Characteristics
Parameter
I
S
@ T
C
= 25°C Continuous Source Current
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Typ. Max. Units
–––
–––
–––
52
100
26
A
80
1.2
78
150
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 19A, V
GS
= 0V
T
J
= 25°C, I
F
= 19A
di/dt = 100A/µs
Ã
e
e
Document Number: 91340
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2
IRLR/U4343PbF & IRLU4343-701PbF
1000
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.5V
2.3V
1000
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.5V
2.3V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.3V
1
1
2.3V
≤
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000.0
Fig 2.
Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 19A
VGS = 10V
2.0
100.0
TJ = 25°C
T J = 175°C
10.0
1.5
1.0
1.0
VDS = 30V
≤
60µs PULSE WIDTH
0.1
0
2
4
6
8
10
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature
20
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
ID= 19A
VDS= 44V
VDS= 28V
VDS= 11V
16
C, Capacitance (pF)
1000
Ciss
Coss
Crss
12
8
100
4
FOR TEST CIRCUIT
SEE FIGURE 19
10
1
10
100
0
0
10
20
30
40
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
Document Number: 91340
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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IRLR/U4343PbF & IRLU4343-701PbF
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
TJ = 175°C
10.0
100
100µsec
10
1.0
TJ = 25°C
VGS = 0V
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
1msec
10msec
100
1000
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
30
2.0
Fig 8.
Maximum Safe Operating Area
25
20
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
1.5
ID = 250µA
15
10
1.0
5
0
25
50
75
100
125
150
175
0.5
-75 -50 -25
0
25
50
75
100 125 150 175
T J , Junction Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Fig 10.
Threshold Voltage vs. Temperature
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
τ
C
τ
Ri (°C/W)
1.359
0.5409
τi
(sec)
0.00135
0.003643
τ
1
τ
2
0.01
Ci=
τi/Ri
Ci= i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91340
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4
IRLR/U4343PbF & IRLU4343-701PbF
RDS(on), Drain-to -Source On Resistance ( mΩ)
EAS, Single Pulse Avalanche Energy (mJ)
200
700
ID = 19A
150
600
500
400
300
200
100
0
25
50
75
100
ID
TOP
2.4A
3.3A
BOTTOM
19A
100
T J = 125°C
50
T J = 25°C
0
2.0
4.0
6.0
8.0
10.0
125
150
175
VGS, Gate-to-Source Voltage (V)
Starting T J, Junction Temperature (°C)
Fig 12.
On-Resistance Vs. Gate Voltage
1000
Fig 13.
Maximum Avalanche Energy Vs. Drain Current
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
10
0.05
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
∆
Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 14.
Typical Avalanche Current Vs.Pulsewidth
180
160
EAR , Avalanche Energy (mJ)
140
120
100
80
60
40
20
0
25
50
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 19A
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy Vs. Temperature
Document Number: 91340
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
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