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IRGC26B120KB: 产品描述Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2; 产品类别分立半导体晶体管; 文件大小44KB，共1页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/

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IRGC26B120KB概述

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2

IRGC26B120KB规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	International Rectifier （ Infineon ）
零件包装代码	DIE
包装说明	UNCASED CHIP, S-XUUC-N2
针数	2
Reach Compliance Code	compliant
ECCN代码	EAR99
集电极-发射极最大电压	1200 V
配置	SINGLE
门极发射器阈值电压最大值	6 V
JESD-30 代码	S-XUUC-N2
元件数量	1
端子数量	2
封装主体材料	UNSPECIFIED
封装形状	SQUARE
封装形式	UNCASED CHIP
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子形式	NO LEAD
端子位置	UPPER
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	MOTOR CONTROL
晶体管元件材料	SILICON

IRGC26B120KB文档预览

IRGC26B120KB

Features

PD - 94563

Die in Wafer Form

1200V

C(nom)

=25A

CE(on) typ.

=2.35V @

C(nom)

@ 25°C

Motor Control IGBT

Short Circuit Rated

150mm Wafer

Benefits

GEN5 Non Punch Through (NPT) Technology

Low V

CE(on)

s Short Circuit Capability

Square RBSOA

Positive V

CE(on)

Temperature Coefficient

Benchmark Efficiency for Motor Control Applications

Rugged Transient Performance

Excellent Current Sharing in Parallel Operation

Reference Standard IR Package Part: GB25XF120K

Electrical Characteristics (Wafer Form)

Parameter

Description

CE (on)

Collector-to-Emitter Saturation Voltage

(BR)CES

Colletor-to-Emitter Breakdown Voltage

GE(th)

CES

GES

Gate Threshold Voltage

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Guaranteed (min, max)

Test Conditions

1.54V min, 1.96V max I

= 10A, T

= 25°C, V

= 15V

= 25°C, I

CES

= 250µA, V

= 0V

1200V min

4.4V min, 6.0V max

10µA max

± 1.1µA max

= V

, T

=25°C, I

= 250µA

= 25°C, V

= 1200V

= 25°C, V

= +/-20V

Mechanical Data

Nominal Backmetal Composition, (Thickness)

Nominal Front Metal Composition, (Thickness)

Dimensions

Wafer Diameter

Wafer Thickness, Tolerance

Relevant Die Mechanical Dwg. Number

Minimum Street Width

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment

Recommended Die Attach Conditions

Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)

99% Al/1% Si, (4µm)

0.260" x 0.260"

150mm, with std. < 100 > flat

185µm, +/-15µm

01-5567

100µm

0.25mm diameter minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300°C

Die Outline

6.604

[.260]

5.205

[.205]

NOT ES :

1. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].

2. CONT ROLLING DIMENS ION: [INCH].

3. LET T ER DES IGNAT ION:

S = S OURCE

G = GAT E

S K = S OURCE KELVIN

IS = CURRENT S ENS E

< 0.635 T OLERANCE = + /- 0.013

< [.0250] T OLERANCE = + /- [.0005]

> 0.635 T OLERANCE = + /- 0.025

> [.0250] T OLERANCE = + /- [.0010]

< 1.270 T OLERANCE = + /- 0.102

< [.050] T OLERANCE = + /- [.004]

> 1.270 T OLERANCE = + /- 0.203

> [.050] T OLERANCE = + /- [.008]

E = EMIT T ER

4. DIMENS IONAL T OLERANCES :

BONDING PADS :

WIDT H

LENGT H

OVERALL DIE:

GAT E

0.812

[.032]

EMITT ER

5.125 6.604

[.202] [.260]

WIDT H

LENGT H

2.045

[.081]

www.irf.com

10/16/02

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IRGC26B120KB相似产品对比

	IRGC26B120KB	IRGC26B120KBPBF
描述	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
是否无铅	含铅	不含铅
是否Rohs认证	不符合	符合
厂商名称	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
零件包装代码	DIE	DIE
包装说明	UNCASED CHIP, S-XUUC-N2	UNCASED CHIP, S-XUUC-N2
针数	2	2
Reach Compliance Code	compliant	compliant
ECCN代码	EAR99	EAR99
集电极-发射极最大电压	1200 V	1200 V
配置	SINGLE	SINGLE
JESD-30 代码	S-XUUC-N2	S-XUUC-N2
元件数量	1	1
端子数量	2	2
封装主体材料	UNSPECIFIED	UNSPECIFIED
封装形状	SQUARE	SQUARE
封装形式	UNCASED CHIP	UNCASED CHIP
峰值回流温度（摄氏度）	NOT SPECIFIED	260
极性/信道类型	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子形式	NO LEAD	NO LEAD
端子位置	UPPER	UPPER
处于峰值回流温度下的最长时间	NOT SPECIFIED	40
晶体管应用	MOTOR CONTROL	MOTOR CONTROL
晶体管元件材料	SILICON	SILICON

IRGC26B120KB

IRGC26B120KB概述

IRGC26B120KB规格参数

IRGC26B120KB文档预览

IRGC26B120KB相似产品对比

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