Absolute Maximum Ratings
Symbol
V
RRM
I
FSM
I
t
Tsolder
T
vj,
T
stg
T
vj,
T
stg
2
Conditions
1)
Values
1200
550
1500
375
– 55
+ 150
Units
V
A
A
2
s
°C
°C
°C
SEMICELL
CAL - Diode Chips
3)
SKCD 47C 120 I
6,9 x 6,9 mm; 50 A
4)
; 1200 V
(≥ 6 bondwires 300
µm ∅)
t
p
= 10 ms; sin; T
j
= 150
°C
t
p
= 10 ms; sin; T
j
= 150
°C
max. 120 s (transfer)
min
max
Characteristics
Symbol
I
RM
V
F
V
F
V
T(TO)
r
T
I
RRM
Q
rr
Tsolder
Tsolder
Conditions
1)
T
j
= 25
°C/125 °C;
V
RRM
I
F
= 50 A; T
j
= 25
°C
T
j
= 125
°C
I
F
= 75 A; T
j
= 25
°C
T
j
= 125
°C
T
j
= 125
°C,
see Fig. 1
T
j
= 125
°C
I
F
= 50 A;
2)
T
j
= 125
°C
I
F
= 50 A; T
j
= 25
°C
2)
T
j
= 125
°C
10 min
5 min
min.
typ.
2,0
1,8
2,25
2,1
1,0
16
40
3
8
250
320
max.
0,2 / 4
2,5
2,3
Units
mA
V
V
V
V
V
mΩ
A
µC
µC
°C
°C
1,2
22
Features
•
Low voltage drop
•
low temperature dependence
•
Very soft reverse recovery
under
all
conditions
•
CAL = Controlled Axial
Lifetime Technology
•
Top side = Al for bonding
by aluminum wire
•
Bottom = 4 layer metallisation
for soldering
Typical Applications
•
Inverse diode for IGBT
(in inverter drives)
•
Freewheeling diode in brake
choppers or step-up choppers
with IGBT or MOSFET
•
UPS Uninteruptible Power
Supplies
•
Hybrid circuits for static power
converters
Mechanical Data
A
tot
A
act.
w
total area
active area
weight
47
32
31
mm
2
mm
2
mg
Supplied on chip carriers (81 units) 102 x 102 x 8 mm
or supplied on frames, on request
Please contact factory
1)
2)
3)
4)
T
case
= 25
°C,
unless otherwise specified
V
R
= 600 V; – di
F
/dt = 800 A/µs;
CAL = Controlled Axial Lifetime Technology
Soldered on DCB ceramic (Al
2
O
3
) 0,4 mm thick
on a 3 mm copper base plate R
thjc
= 0,6 K/W
T
jm
= 150°C; T
case
= 80
°C
© by SEMIKRON
0896
B 15 – 27
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0896
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