SKM400GAL12E4
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 800 V
V
GE
≤
15 V
V
CES
≤
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
SKM400GAL12E4
Conditions
Values
1200
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
618
475
400
1200
-20 ... 20
SEMITRANS 3
IGBT4 Modules
®
T
j
= 150 °C
10
-40 ... 175
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
440
329
400
1200
1980
-40 ... 175
I
Fnom
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x I
CNOM
• Soft switching 4. Generation CAL
diode (CAL4)
I
FRM
I
FSM
T
j
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
AC sinus 50Hz, t = 1 min
500
-40 ... 125
4000
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
440
329
400
1200
1980
-40 ... 175
Typical Applications
•
•
•
•
DC/DC – converter
Brake chopper
Switched reluctance motor
DC – motor
Remarks
• Case temperature limited to
T
c
= 125°C max, recomm.
T
op
= -40 ... +150°C, product
rel. results valid for T
j
= 150°
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
I
C
= 400 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 150 °C
5
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
24.6
1.62
1.38
2260
1.9
1.8
2.2
0.8
0.7
2.5
3.8
5.8
0.1
2.05
2.4
0.9
0.8
2.9
4.0
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
Conditions
min.
typ.
max.
Unit
V
GE
=V
CE
, I
C
= 15.2 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
GAL
© by SEMIKRON
Rev. 2 – 16.06.2009
1
SKM400GAL12E4
Characteristics
Symbol
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
Conditions
V
CC
= 600 V
I
C
= 400 A
V
GE
= ±15 V
R
G on
= 1
Ω
R
G off
= 1
Ω
di/dt
on
= 9700 A/µs
di/dt
off
= 4300 A/µs
per IGBT
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
I
F
= 400 A
T
j
= 150 °C
di/dt
off
= 8800 A/µs T = 150 °C
j
V
GE
= ±15 V
T
j
= 150 °C
V
CC
= 600 V
per diode
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
I
F
= 400 A
T
j
= 150 °C
di/dt
off
= 8800 A/µs T = 150 °C
j
V
GE
= ±15 V
T
j
= 150 °C
V
CC
= 600 V
per Diode
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
min.
typ.
242
47
33
580
101
56
max.
Unit
ns
ns
mJ
ns
ns
mJ
0.072
2.2
2.15
1.3
0.9
2.3
3.1
450
68
30.5
0.14
2.2
2.15
1.3
0.9
2.3
3.1
450
68
30.5
0.14
15
20
2.52
2.47
1.5
1.1
2.5
3.4
2.52
2.47
1.5
1.1
2.5
3.4
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
nH
mΩ
mΩ
SEMITRANS
®
3
IGBT4 Modules
SKM400GAL12E4
Inverse diode
V
F
= V
EC
I
F
= 400 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x I
CNOM
• Soft switching 4. Generation CAL
diode (CAL4)
Typical Applications
•
•
•
•
DC/DC – converter
Brake chopper
Switched reluctance motor
DC – motor
Freewheeling diode
V
F
= V
EC
I
F
= 400 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
terminal-chip
per module
to heat sink M6
Remarks
• Case temperature limited to
T
c
= 125°C max, recomm.
T
op
= -40 ... +150°C, product
rel. results valid for T
j
= 150°
T
C
= 25 °C
T
C
= 125 °C
3
to terminals M6
2.5
0.25
0.5
0.02
0.038
5
5
325
K/W
Nm
Nm
Nm
g
GAL
2
Rev. 2 – 16.06.2009
© by SEMIKRON
SKM400GAL12E4
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2 – 16.06.2009
3
SKM400GAL12E4
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Transient thermal impedance
Fig. 10: CAL diode forward characteristic
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 2 – 16.06.2009
© by SEMIKRON
SKM400GAL12E4
Semitrans 3
GAL
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 2 – 16.06.2009
5
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