SKM 600GA126D
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
®
4
Trench IGBT Modules
SKM 600GA126D
Module
Inverse Diode
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications*
GA
1
06-10-2009 NOS
© by SEMIKRON
SKM 600GA126D
Characteristics
Symbol Conditions
Inverse diode
min.
typ.
max.
Units
SEMITRANS
®
4
Trench IGBT Modules
Module
SKM 600GA126D
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Typical Applications*
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
GA
2
06-10-2009 NOS
© by SEMIKRON
SKM 600GA126D
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
06-10-2009 NOS
© by SEMIKRON
SKM 600GA126D
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
4
06-10-2009 NOS
© by SEMIKRON
SKM 600GA126D
UL Recognized
File no. 63532
5
06-10-2009 NOS
© by SEMIKRON
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