SKM300GAL12T4
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 800 V
V
GE
≤
15 V
V
CES
≤
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
SKM300GAL12T4
Conditions
Values
1200
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
422
324
300
900
-20 ... 20
SEMITRANS 3
Fast IGBT4 Modules
®
T
j
= 150 °C
10
-40 ... 175
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
353
264
300
900
1548
-40 ... 175
I
Fnom
Features
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
I
FRM
I
FSM
T
j
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
AC sinus 50Hz, t = 1 min
500
-40 ... 125
4000
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
353
264
300
900
1548
-40 ... 175
Typical Applications
•
•
•
•
DC/DC – converter
Brake chopper
Switched reluctance motor
DC – motor
Characteristics
Remarks
• Case temperature limited to
T
c
= 125°C max, recomm.
T
op
= -40 ... +150°C, product
rel. results valid for T
j
= 150°
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
Conditions
I
C
= 300 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 150 °C
min.
typ.
1.85
2.25
0.8
0.7
3.5
5.2
max.
2.1
2.45
0.9
0.8
4.0
5.5
6.5
0.3
Unit
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
V
GE
=V
CE
, I
C
= 12 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
5
5.8
0.1
17.6
1.16
0.94
1700
2.5
GAL
© by SEMIKRON
Rev. 2 – 16.06.2009
1
SKM300GAL12T4
Characteristics
Symbol
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
Conditions
V
CC
= 600 V
I
C
= 300 A
V
GE
= ±15 V
R
G on
= 1.5
Ω
R
G off
= 1.5
Ω
di/dt
on
= 7500 A/µs
di/dt
off
= 3350 A/µs
per IGBT
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
I
F
= 300 A
T
j
= 150 °C
di/dt
off
= 7300 A/µs T = 150 °C
j
V
GE
= ±15 V
T
j
= 150 °C
V
CC
= 600 V
per diode
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
I
F
= 300 A
T
j
= 150 °C
di/dt
off
= 7300 A/µs T = 150 °C
j
V
GE
= ±15 V
T
j
= 150 °C
V
CC
= 600 V
per Diode
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
min.
typ.
200
44
27
450
90
29
max.
Unit
ns
ns
mJ
ns
ns
mJ
0.11
2.17
2.11
1.3
0.9
2.9
4.0
345
54
23
0.17
2.17
2.11
1.3
0.9
2.9
4.0
345
54
23
0.17
15
20
2.49
2.42
1.5
1.1
3.3
4.4
2.49
2.42
1.5
1.1
3.3
4.4
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
nH
mΩ
mΩ
SEMITRANS
®
3
Fast IGBT4 Modules
SKM300GAL12T4
Inverse diode
V
F
= V
EC
I
F
= 300 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Features
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
Freewheeling diode
V
F
= V
EC
I
F
= 300 A
V
GE
= 0 V
chip
V
F0
r
F
Typical Applications
•
•
•
•
DC/DC – converter
Brake chopper
Switched reluctance motor
DC – motor
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
terminal-chip
per module
to heat sink M6
Remarks
• Case temperature limited to
T
c
= 125°C max, recomm.
T
op
= -40 ... +150°C, product
rel. results valid for T
j
= 150°
T
C
= 25 °C
T
C
= 125 °C
3
to terminals M6
2.5
0.25
0.5
0.02
0.038
5
5
325
K/W
Nm
Nm
Nm
g
GAL
2
Rev. 2 – 16.06.2009
© by SEMIKRON
SKM300GAL12T4
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2 – 16.06.2009
3
SKM300GAL12T4
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Transient thermal impedance
Fig. 10: CAL diode forward characteristic
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 2 – 16.06.2009
© by SEMIKRON
SKM300GAL12T4
Semitrans 3
GAL
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 2 – 16.06.2009
5
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