SKM 400GB126D ...
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
®
3
Trench IGBT Module
SKM 400GB126D
SKM 400GAL126D
Freewheeling Diode
Inverse Diode
Features
Module
Typical Applications*
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
GB
GAL
1
06-10-2009 NOS
© by SEMIKRON
SKM 400GB126D ...
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max.
Units
SEMITRANS
®
3
Trench IGBT Module
Freewheeling Diode
SKM 400GB126D
SKM 400GAL126D
Features
Module
Typical Applications*
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
GB
GAL
2
06-10-2009 NOS
© by SEMIKRON
SKM 400GB126D ...
Z
th
Symbol
Z
th(j-c)l
Conditions
Values
Units
SEMITRANS
®
3
Z
th(j-c)D
Trench IGBT Module
SKM 400GB126D
SKM 400GAL126D
Features
Typical Applications*
GB
GAL
3
06-10-2009 NOS
© by SEMIKRON
SKM 400GB126D ...
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
06-10-2009 NOS
© by SEMIKRON
SKM 400GB126D ...
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
06-10-2009 NOS
© by SEMIKRON