SKM400GAL12V
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 720 V
V
GE
≤
20 V
V
CES
≤
1200 V
T
j
= 25 °C
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
1200
612
467
400
1200
-20 ... 20
T
j
= 125 °C
10
-40 ... 175
T
c
= 25 °C
T
c
= 80 °C
440
329
400
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
1200
1980
-40 ... 175
T
c
= 25 °C
T
c
= 80 °C
440
329
400
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
1200
1980
-40 ... 175
T
terminal
= 80 °C
AC sinus 50Hz, t = 1 min
500
-40 ... 125
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMITRANS 3
®
V
GES
t
psc
T
j
I
F
I
Fnom
Inverse diode
SKM400GAL12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
T
j
= 175 °C
I
FRM
I
FSM
T
j
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 175 °C
Typical Applications*
•
•
•
•
Electronic welders
DC/DC – converter
Brake chopper
Switched reluctance motor
Remarks
• Case temperature limited to
T
c
= 125°C max, recomm.
T
op
= -40 ... +150°C, product
rel. results valid for T
j
= 150°
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
Conditions
I
C
= 400 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
T
j
= 150 °C
min.
typ.
1.75
2.20
0.94
0.88
2.02
3.30
max.
2.20
2.50
1.04
0.98
2.9
3.80
6.5
0.3
Unit
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
V
GE
=V
CE
, I
C
= 16 mA
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
5.5
6
0.1
24.04
2.36
2.356
4420
1.9
GAL
© by SEMIKRON
Rev. 3 – 23.03.2011
1
SKM400GAL12V
Characteristics
Symbol
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
V
CC
= 600 V
I
C
= 400 A
V
GE
= ±15 V
R
G on
= 3
R
G off
= 3
di/dt
on
= 9800 A/µs
di/dt
off
= 5000 A/µs
du/dt
off
= 7600 V/
µs
per IGBT
Conditions
min.
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
typ.
350
60
39
700
65
42
max.
Unit
ns
ns
mJ
ns
ns
mJ
SEMITRANS
®
3
R
th(j-c)
0.072
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
2.20
2.15
1.3
0.9
2.3
3.1
450
58
26
0.14
2.20
2.15
1.3
0.9
2.3
3.1
450
68
30.5
0.14
15
20
2.52
2.47
1.5
1.1
2.5
3.4
2.52
2.47
1.5
1.1
2.5
3.4
K/W
V
V
V
V
m
m
A
µC
mJ
K/W
V
V
V
V
m
m
A
µC
mJ
K/W
nH
m
m
SKM400GAL12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Inverse diode
V
F
= V
EC
I
F
= 400 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
I
F
= 400 A
T
j
= 150 °C
di/dt
off
= 9500 A/µs T = 150 °C
j
V
GE
= ±15 V
T
j
= 150 °C
V
CC
= 600 V
per diode
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
I
F
= 400 A
T
j
= 150 °C
di/dt
off
= 8800 A/µs T = 150 °C
j
V
GE
= ±15 V
T
j
= 150 °C
V
CC
= 600 V
per Diode
T
j
= 150 °C
T
j
= 150 °C
Freewheeling diode
V
F
= V
EC
I
F
= 400 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
terminal-chip
per module
to heat sink M6
Typical Applications*
•
•
•
•
Electronic welders
DC/DC – converter
Brake chopper
Switched reluctance motor
Remarks
• Case temperature limited to
T
c
= 125°C max, recomm.
T
op
= -40 ... +150°C, product
rel. results valid for T
j
= 150°
T
C
= 25 °C
T
C
= 125 °C
3
to terminals M6
2.5
0.25
0.5
0.02
0.038
5
5
325
K/W
Nm
Nm
Nm
g
GAL
2
Rev. 3 – 23.03.2011
© by SEMIKRON
SKM400GAL12V
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 3 – 23.03.2011
3
SKM400GAL12V
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 3 – 23.03.2011
© by SEMIKRON
SKM400GAL12V
SEMITRANS 3
GAL
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 3 – 23.03.2011
5
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