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SPB-G34

产品描述6 A, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小23KB,共1页
制造商SANKEN
官网地址http://www.sanken-ele.co.jp/en/
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SPB-G34概述

6 A, SILICON, RECTIFIER DIODE

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Schottky Barrier Diodes (Power Surface Mount)
Absolute Maximum Ratings
Parameter
Type No.
V
RM
(V)
I
F (AV)
(A)
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
30V, 40V, 60V
Others
Rth ( j-c) Mass
Remarks Fig.
(°C/ W)
(g)
Electrical Characteristics (Ta = 25°C)
Tstg
(°C)
V
F
(V)
max per
element
Tj
(°C)
I
R
(mA)
I
F
(A)
V
R
= V
RM
I
R
(H)
(mA)
V
R
=V
RM,
Ta=100°C
t
rr
(ns)
I
F
/
I
RP
(mA)
max per element max per element
SPJ-63S
SPB-64S
SPB-G34S
30
6.0
6.0
3.0
50
0.45
3.0
3.0
30
(Tj = 125°C)
Center-tap
3.5
0.55
–40 to +150
5.0
15.0
60
6.0
60
100
60
0.6
0.7
5.0
7.5
5.0
5.0
0.75
3.0
50
(Tj = 150°C)
50
50
100/100
50
50
100/100
40
5.0
0.29
1 Chip
A
SPB-G54S
MPE-24H
SPB-G56S
2.5
5.0
1.04
Center-tap
0.29
1 Chip
B
A
SPJ-63S
I
FSM
(A)
50
I
FMS
Rating
I
FSM
(A)
40
20ms
Peak Forward Surge Current
30
20
10
0
1
5
10
50
Overcurrent Cycles
SPB-64S
Tc—I
F(AV)
Derating
6.0
V
R
=40V
V
F
—I
F
Characteristics
(Typical)
30
10
100
V
R
—I
R
Characteristics
(Typical)
I
FSM
(A)
50
I
FMS
Rating
I
FSM
(A)
Average Forward Current I
F (AV)
(A)
Sinewave
5.0
Reverse Current I
R
(mA)
4.0
1
100ºC
1
60ºC
0.1
27ºC
t /T= 1/ 3
3.0
2.0
1.0
0
Peak Forward Surge Current
t /T = 1/6
Forward Current I
F
(A)
D.C.
10
T
a
= 125ºC
40
20ms
30
t /T = 1/2
0.1
T
a
= 125ºC
100ºC
60ºC
27ºC
0
0.2
0.4
0.6
0.8
1.0
1.2
20
0.01
0.01
10
70
80
90
100
110
120
130
0.001
0.001
0
10
20
30
40
50
60
0
1
5
10
50
Case Temperature Tc
(°C)
Forward Voltage V
F
(V)
Reverse Voltage
V
R
(V)
Overcurrent Cycles
SPB-G34S
3.0
Tc—I
F(AV)
Derating
V
R
=40V
V
F
—I
F
Characteristics
(Typical)
30
10
100
V
R
—I
R
Characteristics
(Typical)
I
FSM
(A)
50
I
FMS
Rating
I
FSM
(A)
Average Forward Current I
F (AV)
(A)
D.C.
2.5
Reverse Current I
R
(mA)
Forward Current I
F
(A)
10
T
a
= 125ºC
100ºC
40
20ms
2.0
1.5
1.0
0.5
t /T = 1/6
t /T= 1/ 3
t /T = 1/2
1
Peak Forward Surge Current
30
1
60ºC
0.1
28ºC
0.1
T
a
= 125ºC
100ºC
60ºC
28ºC
0
0.2
0.4
0.6
0.8
1.0
1.2
20
0.01
10
Sinewave
0
95
100
105
110
115
120
125
0.001
0.01
0.005
0
10
20
30
40
50
60
0
1
5
10
50
Case Temperature Tc
(°C)
Forward Voltage V
F
(V)
Reverse Voltage
V
R
(V)
Overcurrent Cycles
(Unit: mm)
1.7
±0.5
5.4
±0.4
0.16
External Dimensions
Flammability:
UL94V-0 or Equivalent
Fig.
A
6.5
±0.4
2.3
±0.4
0.55
±0.1
5.4
4.1
Fig.
B
10.2
4.44
1.3
2.9
1.37
5.5
±0.4
11.3
10.0
1.2max
Ž
2.5
±0.4
1.15
±0.1
2.29
±0.5
2.29
±0.5
4.9
0 to 0.25
8.5
Œ

0.7
5.0
1.4
3.19
0.5
±0.2
0.86
0.76
0.55
±0.1
1
1 Chip
N.C
Anode
2 (Common to backside of case)
Cathode
Cathode (Common)
3
Anode
Anode
2.54
2.54
0.4
1.5 max
Center-tap
1
2
3
86
11.0
0.8
±0.1
0.8
±0.1
Œ
Type No.

Polarity
Ž
Lot No.
1.27
1.2
1.3
2.59

 
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