DATA SHEET
SILICON POWER MOS FET
NE552R679A
3.0 V OPERATION SILICON RF POWER LD-MOS FET
FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using our NEWMOS2
technology (our WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. This device can
deliver 28.0 dBm output power with 60% power added efficiency at 460 MHz under the 3.0 V supply voltage.
FEATURES
• High output power
: P
out
= 28.0 dBm TYP. (V
DS
= 3.0 V, I
Dset
= 300 mA, f = 460 MHz, P
in
= 15 dBm)
• High power added efficiency :
η
add
= 60% TYP. (V
DS
= 3.0 V, I
Dset
= 300 mA, f = 460 MHz, P
in
= 15 dBm)
• High linear gain
• Surface mount package
• Single supply
: G
L
= 20 dB TYP. (V
DS
= 3.0 V, I
Dset
= 300 mA, f = 460 MHz, P
in
= 5 dBm)
: 5.7
×
5.7
×
1.1 mm MAX.
: V
DS
= 2.8 to 6.0 V
APPLICATIONS
• Family Radio Service
: 3.0 V Handsets
ORDERING INFORMATION
Part Number
NE552R679A-T1
Package
79A
Marking
AU
Supplying Form
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
NE552R679A-T1A
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE552R679A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10125EJ02V0DS (2nd edition)
Date Published September 2002 CP(K)
Printed in Japan
The mark
!
shows major revised points.
NEC Compound Semiconductor Devices 2001, 2002
NE552R679A
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current (Pulse Test)
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
DS
I
DS
Note
P
tot
T
ch
T
stg
Ratings
15.0
5.0
350
600
10
125
−55
to +125
Unit
V
V
mA
mA
W
°C
°C
Note
Duty Cycle 50%, T
on
≤
1 s
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
V
DS
V
GS
I
DS
P
in
f = 460 MHz, V
DS
= 3.0 V
Test Conditions
MIN.
2.8
0
−
14
TYP.
MAX.
Unit
V
V
mA
dBm
3.0
2.0
300
15
6.0
3.0
500
20
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, Unless otherwise specified, using NEC standard test fixture)
Parameter
Gate to Source Leak Current
Saturated Drain Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Thermal Resistance
Transconductance
Drain to Source Breakdown Voltage
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Note2
Symbol
I
GSS
I
DSS
V
th
R
th
g
m
BV
DSS
P
out
I
DS
Test Conditions
V
GS
= 5.0 V
V
DS
= 8.0 V
V
DS
= 3.5 V, I
DS
= 1 mA
Channel to Case
V
DS
= 3.0 V, I
DS
= 300 mA
I
DSS
= 10
µ
A
f = 460 MHz, V
DS
= 3.0 V,
P
in
= 15 dBm,
I
Dset
= 300 mA (RF OFF) ,
Note1
MIN.
−
−
1.0
−
−
15
26.0
−
55
−
TYP.
−
−
1.4
−
0.6
18
28.0
320
60
20
MAX.
100
100
1.9
10
−
−
−
−
−
−
Unit
nA
nA
V
°C/W
S
V
dBm
mA
%
dB
η
add
G
L
Note 1.
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2.
P
in
= 5 dBm
2
Data Sheet PU10125EJ02V0DS
NE552R679A
TYPICAL CHARACTERISTICS (T
A
= +25°C)
Drain Current
I
DS
(mA)
OUTPUT POWER, DRAIN CURRENT
η
d
,
η
add
vs. INPUT POWER
30
f = 460 MHz
V
DS
= 3.0 V
I
DQ
= 300 mA
1 250
P
out
1 000
INTERMODULATION DISTORTION vs.
2 TONE TO OUTPUT POWER
Intermodulation Distortion IM
3
, IM
5
(dBc)
−10
−20
−30
IM
3
−40
IM
5
−50
−60
−70
5
f = 460 MHz
∆f
= 1 MHz
V
DS
= 3.0 V
I
DQ
= 300 mA
Output Power P
out
(dBm)
20
η
d
η
add
750
75
15
I
DS
10
500
50
250
25
5
−5
0
5
10
15
0
20
0
Drain Efficiency
η
d
(%)
Power Added Efficiency
η
add
(%)
25
100
10
15
20
25
30
Input Power P
in
(dBm)
2 Tone to Output Power P
out
(dBm)
Drain Current
I
DS
(mA)
30
Output Power P
out
(dBm)
Drain Efficiency
η
d
(%)
Power Added Efficiency
η
add
(%)
P
out
20
20
η
d
η
add
750
75
η
d
η
add
750
75
15
I
DS
10
500
50
15
I
DS
10
500
50
250
25
250
25
5
−5
0
5
10
15
0
20
0
5
−5
0
5
10
15
0
20
0
Input Power P
in
(dBm)
Input Power P
in
(dBm)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10125EJ02V0DS
Drain Efficiency
η
d
(%)
Power Added Efficiency
η
add
(%)
100
Output Power P
out
(dBm)
25
f = 460 MHz
V
DS
= 3.0 V
I
DQ
= 100 mA
1 250
P
out
1 000
30
25
f = 460 MHz
V
DS
= 3.5 V
I
DQ
= 100 mA
1 250
1 000
Drain Current
I
DS
(mA)
100
OUTPUT POWER, DRAIN CURRENT
η
d
,
η
add
vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT
η
d
,
η
add
vs. INPUT POWER
3
NE552R679A
S-PARAMETERS
Test Conditions: V
DS
= 3.0 V, I
Dset
= 300 mA, T
A
= +25°C)
Frequency
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
S11
Mag.
0.655
0.651
0.666
0.660
0.656
0.655
0.654
0.658
0.656
0.658
0.663
0.668
0.668
0.668
0.672
0.674
0.673
0.675
0.677
0.677
0.677
0.677
0.681
0.677
0.675
0.674
0.673
0.670
0.667
0.665
0.662
0.648
0.656
0.652
0.651
0.648
0.644
0.641
0.636
0.633
Ang.
−120.2
−142.0
−156.1
−161.4
−165.8
−168.4
−170.2
−171.8
−172.8
−173.8
−175.0
−175.8
−176.8
−177.6
−178.5
−179.2
−180.0
179.2
178.5
177.8
177.0
176.2
175.4
174.7
174.6
173.8
173.2
172.3
171.4
170.7
169.9
168.9
168.6
167.6
167.1
166.2
165.4
164.7
163.8
163.0
dB
21.2
17.2
13.8
11.5
9.4
7.8
6.5
5.2
4.1
3.1
2.1
1.1
0.4
−0.4
−1.1
−1.8
−2.5
−3.2
−3.8
−4.4
−4.9
−5.4
−6.0
−6.5
−6.9
−7.4
−7.9
−8.3
−8.7
−9.1
−9.5
−9.8
−10.4
−10.6
−11.0
−11.3
−11.6
−12.0
−12.3
−12.6
S21
Mag.
11.42
7.25
4.89
3.74
2.96
2.46
2.10
1.81
1.61
1.43
1.27
1.14
1.04
0.96
0.88
0.81
0.75
0.69
0.65
0.61
0.57
0.54
0.50
0.48
0.45
0.43
0.40
0.39
0.37
0.35
0.33
0.32
0.30
0.29
0.28
0.27
0.26
0.25
0.24
0.23
Ang.
115.3
99.3
88.2
81.6
77.2
72.6
68.4
64.4
60.6
56.6
53.3
49.9
46.6
43.7
40.6
37.5
34.6
31.7
28.9
26.4
24.0
21.2
19.2
16.6
13.9
11.7
9.5
7.8
5.7
3.5
1.4
−0.1
−1.4
−2.8
−4.5
−6.6
−7.9
−10.1
−11.5
−12.5
dB
−31.6
−29.0
−29.3
−29.2
−29.2
−29.3
−29.5
−29.6
−29.7
−29.8
−30.0
−30.2
−30.3
−30.6
−30.7
−31.0
−31.1
−31.3
−31.6
−31.7
−31.9
−32.2
−32.2
−32.5
−32.7
−32.8
−33.0
−33.2
−33.4
−33.4
−33.7
−34.1
−34.6
−35.3
−35.6
−35.6
−35.7
−36.0
−36.1
−36.2
S12
Mag.
0.026
0.035
0.034
0.034
0.035
0.034
0.033
0.033
0.033
0.032
0.031
0.031
0.030
0.030
0.029
0.028
0.028
0.027
0.026
0.026
0.025
0.025
0.025
0.024
0.023
0.023
0.022
0.022
0.021
0.021
0.021
0.020
0.019
0.017
0.017
0.017
0.016
0.016
0.016
0.015
S22
Ang.
28.7
10.3
−0.1
−5.6
−11.8
−15.9
−20.1
−24.2
−27.6
−31.5
−35.3
−39.1
−42.1
−45.4
−49.0
−51.8
−55.3
−58.6
−61.5
−64.6
−68.3
−71.4
−75.1
−78.2
−82.0
−85.1
−89.7
−92.3
−96.7
−101.5
−106.4
−111.8
−117.6
−122.0
−123.8
−126.7
−130.5
−135.9
−140.3
−144.7
Mag.
0.633
0.757
0.796
0.808
0.815
0.819
0.823
0.828
0.831
0.835
0.840
0.843
0.846
0.851
0.853
0.857
0.859
0.862
0.864
0.867
0.869
0.869
0.863
0.873
0.874
0.874
0.873
0.875
0.874
0.873
0.873
0.879
0.872
0.871
0.871
0.870
0.869
0.868
0.867
0.865
Ang.
−167.5
−167.9
−173.0
−175.0
−175.9
−176.8
−177.4
−178.0
−179.4
−179.9
179.6
179.2
178.7
178.2
177.7
177.4
176.6
176.1
175.5
174.9
174.2
173.6
172.6
172.4
171.7
170.9
170.1
169.4
168.7
167.9
167.2
166.8
165.7
164.9
164.1
163.1
162.3
161.4
160.4
159.4
MAG
Note
MSG
Note
dB
dB
26.4
23.1
21.5
20.4
19.3
18.6
18.0
16.2
14.2
12.8
11.7
10.7
9.8
9.1
8.2
7.6
6.8
6.1
5.5
5.0
4.4
3.8
3.0
2.8
2.2
1.7
1.2
0.8
0.3
−0.2
−0.8
−1.0
−1.7
−2.1
−2.4
−2.8
−3.2
−3.7
−4.0
−4.4
K
−
0.59
0.36
0.40
0.50
0.62
0.76
0.91
1.04
1.20
1.37
1.54
1.75
1.93
2.14
2.38
2.61
2.87
3.20
3.51
3.76
4.12
4.57
5.14
5.35
5.82
6.29
6.90
7.45
8.10
8.64
9.63
10.28
12.13
13.80
14.87
15.51
16.66
18.41
19.61
21.02
Note
When K
≥
1, the MAG (Maximum Available Gain) is used.
When K
<
1, the MSG (Maximum Stable Gain) is used.
S
21
MAG = S
12
MSG = S
21
S
12
(K –
√
(K – 1) )
2
1+
∆
−S
11
−S
22
,K=
,
2
⋅S
12
⋅S
21
2
2
2
∆
= S
11
⋅
S
22
−
S
21
⋅
S
12
LARGE SIGNAL IMPEDANCE (V
DS
= 3.0 V, I
DS
= 300 mA, f = 460 MHz)
f (MHz)
460
Z
in
(Ω)
7.47 +j18.24
Z
OL
(Ω)
Note
4.82 +j5.04
Note
Z
OL
is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency.
4
Data Sheet PU10125EJ02V0DS
NE552R679A
EVALUATION BOARD for 460 MHz
Unit : mm
V
GS
C9
C8 C7
C7 C8 C9
V
DS
R1
L1
C4
30.0
C6
C6
C3
C2
C1
C5
48.0
Symbol
C1
C2
C3
C4
C5
C6
C7
C8
C9
R1
L1
Circuit Board
Value
9.1 pF
12 pF
20 pF
3.3 pF
13 pF
22 pF
1 000 pF
0.33
µ
F
3.3
µ
F - 16V
1 000
Ω
22 nH
t = 0.4 mm,
ε
r = 4.5
R4775
Comment
Data Sheet PU10125EJ02V0DS
5
Microchip MCU
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